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Full-Text Articles in Semiconductor and Optical Materials

Carrier Dynamics In Green Iii-Nitride Leds Using Small-Signal Electroluminescence, Xuefeng Li Nov 2023

Carrier Dynamics In Green Iii-Nitride Leds Using Small-Signal Electroluminescence, Xuefeng Li

Optical Science and Engineering ETDs

Solid-state lighting has achieved significant success over the past two decades, but the low quantum efficiency of green LEDs (i.e., the “green gap”) remains a barrier to full red-green-blue (RGB) displays in numerous applications. Combating efficiency reduction in longer-wavelength LEDs requires understanding the relative roles of intrinsic effects (e.g., wave-function overlap, carrier-current density relationship, phase-space filling (PSF)) vs. extrinsic effects (e.g., material degradation due to increased defect density, compositional inhomogeneities, etc.). A systematic study of the carrier dynamics in InGaN/GaN LEDs is very important for understanding the origin of the green gap and for providing solutions to improve the efficiency …


Investigation Of Gaas Double Heterostructures For Photonic Heat Engines, Nathan Giannini-Hutchin Dec 2022

Investigation Of Gaas Double Heterostructures For Photonic Heat Engines, Nathan Giannini-Hutchin

Optical Science and Engineering ETDs

The creation of a laser cooled semiconductor device has been a long sought achievement. GaAs-based devices have emerged as a promising candidate for the realization of this goal. Efforts to improve the efficiency of such devices have enabled the material to exhibit external quantum efficiencies (EQE, a measure of the probability that an excitation leads to the emission of a photon) of 99.5\%. Despite this impressive feat, a laser coolable device remains elusive.

To investigate the obstacles to such a device, the material characteristics of GaAs-based double heterostructures (DHS) are theoretically and experimentally examined. Through this study, a GaAs $\vert$ …


Interferometric Lithography- An Approach To Large Area And Cost Effective Nanopatterning, Vineeth Sasidharan Nov 2021

Interferometric Lithography- An Approach To Large Area And Cost Effective Nanopatterning, Vineeth Sasidharan

Optical Science and Engineering ETDs

In this dissertation interferometric lithography is approached in two different ways to address two important constraints of nanopatterning. One approach solves the problem of scaling up interferometric lithography to wafer scale (4 inch or larger) area. Through the second approach we have developed a nanopatterning technique based on interferometric lithography by using an inexpensive (~$100) diode laser as source, making interferometric lithography a very cost-effective technique.

Wafer-scale large-area nanopatterning was developed using an amplitude grating mask as a grating beam splitter along with spatial averaging of laser intensity by wobbling. The longitudinal and transverse coherence issues both are eased by …


The Development Of All Solid-State Optical Cryo-Cooler, Junwei Meng May 2020

The Development Of All Solid-State Optical Cryo-Cooler, Junwei Meng

Optical Science and Engineering ETDs

This dissertation describes the development of an all solid-state optical cryo-cooler. Crystals of 10% wt. ytterbium-doped yttrium lithium fluoride (Yb3+:YLF) are used to cool an infrared HgCdTe sensor payload to an absolute temperature below 135 K, equivalent to delta T equal 138 K below ambient. This record level of cooling is accomplished with a single stage, in a completely vibration-free environment, with a corresponding cooling power of 190 mW. This milestone is made possible by the design and fabrication of an undoped YLF thermal link that efficiently shields the payload with a non-right angle kink from intense anti-Stokes …


Mid-Ir Optical Refrigeration And Radiation Balanced Lasers, Saeid Rostami Apr 2020

Mid-Ir Optical Refrigeration And Radiation Balanced Lasers, Saeid Rostami

Optical Science and Engineering ETDs

This dissertation reports recent advances in mid-infrared (mid-IR) optical refrigeration and Radiation Balanced Lasers (RBLs). The first demonstration of optical refrigeration in Ho:YLF and Tm:YLF crystals as promising mid-IR laser cooling candidates is reported. Room temperature laser cooling efficiency of Tm- and Ho-doped crystals at different excitation polarization is measured and their external quantum efficiency and background absorption are extracted. Complete characterization of laser cooling samples is obtained via performing detailed low-temperature spectroscopic analysis, and their minimum achievable temperature as well as conditions to achieve laser cooling efficiency enhancement in mid-IR are investigated. By developing a Thulium-doped fiber amplifier, seeded …


Algorithmic Multi-Color Cmos Avalanche Photodiodes For Smart-Lighting Applications, Md Mottaleb Hossain May 2019

Algorithmic Multi-Color Cmos Avalanche Photodiodes For Smart-Lighting Applications, Md Mottaleb Hossain

Optical Science and Engineering ETDs

Future smart-lighting systems are expected to deliver adaptively color-tunable and high-quality lighting that is energy efficient while also offering integrated visible-light wireless communication services. To enable these systems at a commercial level, inexpensive and fast sensors with spectral-sensing capability are required. CMOS-compatible silicon avalanche photodiodes (APDs) can be an excellent fit to this problem due to their excellent sensitivity, high speeds and cost effectiveness; however, color sensing is a challenge without resorting to expensive spectral filters, as done in commercially. To address this challenge, we have recently designed and modeled a novel CMOS-compatible dual-junction APD. The device outputs two photocurrents …


Vertical Transport Study Of Iii-V Type-Ii Superlattices, Zahra Taghipour Nov 2018

Vertical Transport Study Of Iii-V Type-Ii Superlattices, Zahra Taghipour

Optical Science and Engineering ETDs

Type-II strained layer superlattice (T2SL) semiconductors hold great promise for mid- and long-wavelength infrared photodetectors. While T2SL-based materials have advanced significantly in the last three decades, an outstanding challenge to improve the T2SLs is to understand the carrier transport and its limitations, in particular along the superlattice growth layers.

In this dissertation, an overview of the current state-of-the-art InAs/GaSb T2SLs is presented. Fundamental semiconductor device equations and transport properties, including miniband conduction and the drift-diffusion parameters, are reviewed, and the fundamental limiting factors in carrier's transport are discussed. Furthermore, the standard method of electron-beam-induced current technique to measuring these parameters …