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Articles 1 - 3 of 3
Full-Text Articles in Semiconductor and Optical Materials
Application Of Electrolessplating Technology In Interconnection Manufacturing Of Ultralarge-Scale Integration, Zeng-Lin Wang
Application Of Electrolessplating Technology In Interconnection Manufacturing Of Ultralarge-Scale Integration, Zeng-Lin Wang
Journal of Electrochemistry
In this paper,research progresses in electroless plating for damascene copper process were reviewed.Electroless nickel ternary alloy deposition for barrier layer and electroless copper plating for seed layer were presented.Bottom-up copper fill high-aspect-via-hole and electroless plating after ICB-Pd catalytic layer for seed layer were mainly introduced.The applications of electroless plating in ultralarge-scale integration were discussed,and the developing tendency was also suggested.
Special Photoelectrochemical Response Of Nano-Crystalline Tio_2 Electrode, Bi-Bo Lan, Jian-Zhang Zhou, Yan-Yan Xi, Hong-Xiang Chen, Guang-Hua Yao, Zhong-Hua Lin
Special Photoelectrochemical Response Of Nano-Crystalline Tio_2 Electrode, Bi-Bo Lan, Jian-Zhang Zhou, Yan-Yan Xi, Hong-Xiang Chen, Guang-Hua Yao, Zhong-Hua Lin
Journal of Electrochemistry
The nano-crystalline TiO_2 electrodes were prepared by spread method,electrodeposition and sol-gel method.The experimental results show that the nano-crystalline TiO_2 electrodes have special photoelectrochemical response-the photocrrent-potential curves appear peaks.The special photoelectrochemical behaviors of nano-(crystalline) TiO_2 electrodes are ascribed to nano-structure as well as special light induced redox reaction mechanism of nano-crystalline semiconductor electrodes.
Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm 2 fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …