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Semiconductor and Optical Materials Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Keyword
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- Microelectromechanical systems (2)
- Raman spectroscopy (2)
- 3D nanofabrication (1)
- Blades (1)
- Fabry-Pérot (1)
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- Fluid flow measurement (1)
- Heavy particle radiation (1)
- Light guides (1)
- Microelectromechanical resonators (1)
- Micromechanics (1)
- Optical fiber polarization (1)
- Optical fiber sensors (1)
- Optical fiber tip sensors (1)
- Optical fibers (1)
- Piezoelectric resonators (1)
- Radiation effects in MEMS (1)
- Radiation effects in electronics (1)
- Residual stresses--Measurement (1)
- Rotors (1)
- Semiconductors--Testing (1)
- Sensors (1)
- Silicon carbide (1)
- Two-photon polymerization (1)
- Publication Type
Articles 1 - 6 of 6
Full-Text Articles in Semiconductor and Optical Materials
Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim
Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim
Faculty Publications
Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro-robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO2) thin film is …
Optical Fiber Tip Micro Anemometer, Jeremiah C. Williams, Hengky Chandrahalim
Optical Fiber Tip Micro Anemometer, Jeremiah C. Williams, Hengky Chandrahalim
AFIT Patents
A passive microscopic flow sensor includes a three-dimensional microscopic optical structure formed on a cleaved tip of an optical fiber. The three-dimensional microscopic optical structure includes a post attached off-center to and extending longitudinally from the cleaved tip of the optical fiber. A rotor of the three-dimensional microscopic optical structure is received for rotation on the post. The rotor has more than one blade. Each blade has a reflective undersurface that reflects a light signal back through the optical fiber when center aligned with the optical fiber, the blades of the rotor shaped to rotate at a rate related to …
Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
AFIT Patents
A passive microscopic Fabry-Pérot Interferometer (FPI) sensor an optical fiber a three-dimensional microscopic optical structure formed on a cleaved tip of an optical fighter that reflects a light signal back through the optical fiber. The reflected light is altered by refractive index changes in the three-dimensional structure that is subject to at least one of: (i) thermal radiation; and (ii) volatile organic compounds.
Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
AFIT Patents
A passive microscopic Fabry-Pérot Interferometer (FPI) sensor an optical fiber a three-dimensional microscopic optical structure formed on a cleaved tip of an optical fighter that reflects a light signal back through the optical fiber. The reflected light is altered by refractive index changes in the three-dimensional structure that is subject to at least one of: (i) thermal radiation; and (ii) volatile organic compounds.
Characterization Of Stress In Gan-On-Sapphire Microelectromechanical Systems (Mems) Structures Using Micro-Raman Spectroscopy, Francisco E. Parada
Characterization Of Stress In Gan-On-Sapphire Microelectromechanical Systems (Mems) Structures Using Micro-Raman Spectroscopy, Francisco E. Parada
Theses and Dissertations
Micro-Raman (µRaman) spectroscopy is an efficient, non-destructive technique widely used to determine the quality of semiconductor materials and microelectromechanical systems. This work characterizes the stress distribution in wurtzite gallium nitride grown on c-plane sapphire substrates by molecular beam epitaxy. This wide bandgap semiconductor material is being considered by the Air Force Research Laboratory for the fabrication of shock-hardened MEMS accelerometers. µRaman spectroscopy is particularly useful for stress characterization because of its ability to measure the spectral shifts in Raman peaks in a material, and correlate those shifts to stress and strain. The spectral peak shift as a function of stress, …
Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli
Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli
Theses and Dissertations
Micro-Raman (µ-Raman) spectroscopy is used to measure residual stress in two silicon carbide (SiC) poly-types: single-crystal, hexagonally symmetric 6H-SiC, and polycrystalline, cubic 3C-SiC thin films deposited on Si substrates. Both are used in micro-electrical-mechanical systems (MEMS) devices. By employing an incorporated piezoelectric stage with submicron positioning capabilities along with the Raman spectral acquisition, spatial scans are performed to reveal areas in the 6H-SiC MEMS structures that contain residual stress. Shifts in the transverse optical (TO) Stokes peaks of up to 2 cm-1 are correlated to the material strain induced by the MEMS fabrication process through the development of phonon …