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Full-Text Articles in Mechanics of Materials
Growth And Analysis Of Micro And Nano Cdte Arrays For Solar Cell Applications, Brandon Adrian Aguirre
Growth And Analysis Of Micro And Nano Cdte Arrays For Solar Cell Applications, Brandon Adrian Aguirre
Open Access Theses & Dissertations
CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ~20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 …
Nanoprobe I-V Characterization Of Cdte/Cds Micro And Nano-Patterned Solar Cells, Heber Prieto
Nanoprobe I-V Characterization Of Cdte/Cds Micro And Nano-Patterned Solar Cells, Heber Prieto
Open Access Theses & Dissertations
This thesis presents a novel way to characterize micro and nano patterned cadmium telluride thin film solar cells via a nano-probe system. A historical review of CdTe-based solar cells is presented first followed by review of the technology developed to produce the patterned CdTe cells. A detailed presentation is then provided on the use of a Zyvex nanoprobing system to characterize the patterned solar cells. The I-V response of micro- and nano-patterned solar cells stimulated under different e-beam conditions is presented and analyzed. Suggestions of how to improve the technique are provided. This work documents, for the first time, the …
Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann
Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann
Electrical & Computer Engineering Faculty Publications
The evolution of the band structure of β-In2 S3−3x O3x (BISO) thin films grown by physical vapor deposition, with composition x, is investigated using x-ray photoelectron spectroscopy. It is shown that the energy difference between the valence-band level and the Fermi level remains nearly constant as the optical band gap of the films increases. As a consequence, the difference between the conduction band level and the Fermi level increases as much as the optical band gap of the films. The calculation of the electronic affinity [ ] of the BISO thin films shows that it decreases linearly from 4.65 …