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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Investigation Of Host Nanotube Parameters For Enhancing The Performance Of Nanostructured Cds-Cdte Solar Cells, Deepak Kumar Jan 2020

Investigation Of Host Nanotube Parameters For Enhancing The Performance Of Nanostructured Cds-Cdte Solar Cells, Deepak Kumar

Theses and Dissertations--Electrical and Computer Engineering

Numerical simulations are performed to investigate the effects of host nanotube parameters (pore diameter and pitch for different CdS coverages) and CdTe doping density on device performance in nanowire CdS/ CdTe solar cells using SCAPS-1D. This research finds the optimum values for these parameters in order to achieve the highest efficiency. Experimentally the effect of anodization voltage and fluoride ion concentration on the pore diameter and the pitch are studied for the Titania nanotubes host. It is observed that in the range of 0.3 mL to 2 mL of ammonium fluoride content, pore diameter and the pitch of the Titania …


Optical And Electrical Analysis Of Zno/Znte Micropillar Solar Cells, Sadia Binte Sohid Jan 2019

Optical And Electrical Analysis Of Zno/Znte Micropillar Solar Cells, Sadia Binte Sohid

Master’s Theses

The prime focus of the energy-research community in recent times has been replacing fossil fuels with renewable energy. Therefore, photovoltaic research areas are rapidly expanding in this era. The purpose of this work is to compare three different structural ZnO/ZnTe solar cell types (planar, axial micropillar and radial micropillar). The best optical and electrical performance has been obtained by the radial junction (core-shell) ZnO/ZnTe micropillar solar cell due to its pillar structure and radial junction. The unique advantage of the radial junction micropillar is that the angle of the incident light and the carrier collection is orthogonal. Therefore, the pillar …


Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks Aug 2016

Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks

Graduate Theses and Dissertations

The first-ever 1.7kV 8A SiC physics-based compact SPICE model is developed for behavior prediction, modeling and simulation of the GeneSiC “Super” Junction Transistor. The model implements Gummel-Poon based equations and adds a quasi-saturation collector series resistance representation from a 1.2 kV, 6 A SiC bipolar junction transistor model developed in Hangzhou, China. The model has been validated with the GA08JT17-247 device data representing both static and dynamic characteristics from GeneSiC. Parameter extraction was performed in IC-CAP and results include plots showing output characteristics, capacitance versus voltage (C-V), and switching characteristics for 25 °C, 125 °C, and 175 °C temperatures.


Simulating Nanowires And Ultra-Thin Body Transistors Using Nemo5 On Nanohub.Org, Liang Yuan Dai, James E. Fonseca, Chu Yuan Chen, Gerhard Klimeck Aug 2015

Simulating Nanowires And Ultra-Thin Body Transistors Using Nemo5 On Nanohub.Org, Liang Yuan Dai, James E. Fonseca, Chu Yuan Chen, Gerhard Klimeck

The Summer Undergraduate Research Fellowship (SURF) Symposium

During the past twenty years, the most important aspects of semiconductor electronics have advanced into the nanometer range, resulting in exponential increases of microprocessor computing performance. As the size of electrical components continues to shrink, the cost of experimental research and industrial fabrication in this field has increased dramatically. Thus, the development of accurate nanoscale model simulations becomes necessary as a measure to decrease the high financial expenses of advancing semiconductor technology. This simulator supports atomistic modeling in order to provide an accurate description of the nanoscale devices, as current electrical components operate in the quantum regime and are affected …


Developing Compact Models For Passive Devices On Ibm 45nm Cmos Soi Technology, Yufei Feng, Yanfei Shen, Saeed Mohammadi Aug 2014

Developing Compact Models For Passive Devices On Ibm 45nm Cmos Soi Technology, Yufei Feng, Yanfei Shen, Saeed Mohammadi

The Summer Undergraduate Research Fellowship (SURF) Symposium

The standard IBM 45 nm technology is widely adopted for industrial and academic purpose by integrates circuit designers. Original models provided by foundry are not accurate, which might cause inaccuracy in circuit simulations. Equivalent circuit models, using RLC elements to simulate electrical component, will effectively deliver their electrical performance. This study consists of four steps to construct these models. First, Cadence Virtuoso, the commercial circuit design software was used to run simulations and extract data for different device parameters. Second, analyzing tools, like Microsoft Excel or Matlab, are used to analyze the extracted data. Then, equations are written for each …


Mems Lab Simulation Tool, Oluwatosin D. Adeosun, Sambit Palit, Ankit Jain, Muhammad A. Alam Oct 2013

Mems Lab Simulation Tool, Oluwatosin D. Adeosun, Sambit Palit, Ankit Jain, Muhammad A. Alam

The Summer Undergraduate Research Fellowship (SURF) Symposium

MEMS actuators have multiple design applications. Understanding their behavior as well as the ability to predict their actuation characteristics and voltage response is important when designing these actuators. In order to know these devices will behave, designers have to solve multiple analytical equations and experiments that can be very time consuming. Over the course of the summer a tool was created on nanoHUB that will allow users to enter information about a MEMS actuator and provide the voltage response of the actuator. To create the tool, scaling equations were first provided for various geometry configurations and the equations were next …


Electromagnetic Modeling Of Photolithography Aerial Image Formation Using The Octree Finite Element Method, Seth A. Jackson Jan 2011

Electromagnetic Modeling Of Photolithography Aerial Image Formation Using The Octree Finite Element Method, Seth A. Jackson

Masters Theses 1911 - February 2014

Modern semiconductor manufacturing requires photolithographic printing of subillumination wavelength features in photoresist via electromagnetic energy scattered by complicated photomask designs. This results in aerial images which are subject to constructive and destructive wave interference, as well as electromagnetic resonances in the photomask features. This thesis proposes a 3-D full-wave frequency domain nonconformal Octree mesh based Finite Element Method (OFEM) electromagnetic scattering solver in combination with Fourier Optics to accurately simulate the entire projection photolithography system, from illumination source to final image intensity in the photoresist layer. A rapid 1-irregular octree based geometry model mesher is developed and shown to perform …


Study Of Direct Semiconductor Materials For An Optically Controlled Switch, Sung Taek Ko Apr 1989

Study Of Direct Semiconductor Materials For An Optically Controlled Switch, Sung Taek Ko

Electrical & Computer Engineering Theses & Dissertations

A model for a bulk GaAs photoconductive switch has been developed and solved to determine the performance of the device in closing and opening switch applications. The GaAs material has been characterized by deep level transient spectroscopy (DLTS). Two electron traps (EL2 and EL5) and one hole trap (CuB} have been detected and were included in the model. Simulation studies are performed on several GaAs switch systems composed of different combinations and density of deep levels to investigate the influence of deep traps in a photoconductive switch system. The electron occupancy of each deep trap is traced in …