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2014

Simulation

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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Developing Compact Models For Passive Devices On Ibm 45nm Cmos Soi Technology, Yufei Feng, Yanfei Shen, Saeed Mohammadi Aug 2014

Developing Compact Models For Passive Devices On Ibm 45nm Cmos Soi Technology, Yufei Feng, Yanfei Shen, Saeed Mohammadi

The Summer Undergraduate Research Fellowship (SURF) Symposium

The standard IBM 45 nm technology is widely adopted for industrial and academic purpose by integrates circuit designers. Original models provided by foundry are not accurate, which might cause inaccuracy in circuit simulations. Equivalent circuit models, using RLC elements to simulate electrical component, will effectively deliver their electrical performance. This study consists of four steps to construct these models. First, Cadence Virtuoso, the commercial circuit design software was used to run simulations and extract data for different device parameters. Second, analyzing tools, like Microsoft Excel or Matlab, are used to analyze the extracted data. Then, equations are written for each …