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Articles 1 - 17 of 17
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
On Control System Design For The Conventional Mode Of Operation Of Vibrational Gyroscopes, Lili Dong, Qing Zheng, Zhiqiang Gao
On Control System Design For The Conventional Mode Of Operation Of Vibrational Gyroscopes, Lili Dong, Qing Zheng, Zhiqiang Gao
Electrical and Computer Engineering Faculty Publications
This paper presents a novel control circuitry design for both vibrating axes (drive and sense) of vibrational gyroscopes, and a new sensing method for time-varying rotation rates. The control design is motivated to address the challenges posed by manufacturing imperfection and environment vibrations that are particularly pronounced in microelectromechanical systems (MEMS) gyroscopes. The method of choice is active disturbance rejection control that, unlike most existing control design methods, does not depend on an accurate model of the plant. The task of control design is simplified when the internal dynamics, such as mechanical cross coupling between the drive and sense axes, …
Cut Part Count And Increase Dynamic Range In The Hybrid Coupled Attenuator, Chin-Leong Lim
Cut Part Count And Increase Dynamic Range In The Hybrid Coupled Attenuator, Chin-Leong Lim
Chin-Leong Lim
Modern digital modulation formats are generally phase-sensitive. Therefore, the variable attenuators in digital wireless equipment should exhibit minimal phase variation over attenuation. The hybrid coupled attenuator (HCA) has substantially less phase variation than the competing constant-impedance attenuators such as the Pi and the Bridged-T. At microwave frequencies, HCA implementations tend to suffer from reduced dynamic (attenuation) range due to component parasitics, especially when plastic-packaged PIN diodes are selected to lower cost. To maximize the dynamic range in a low-cost 1.9 GHz HCA , we first identified the critical components and then compensated for their deleterious effect. This paper describes the …
Hand-Held Flyback Driven Coaxial Dielectric Barrier Discharge: Development And Characterization, Victor J. Law, Vladimir Milosavljevic, Neil O’Connor, James F. Lalor, Steven Daniels
Hand-Held Flyback Driven Coaxial Dielectric Barrier Discharge: Development And Characterization, Victor J. Law, Vladimir Milosavljevic, Neil O’Connor, James F. Lalor, Steven Daniels
Articles
The development of a handheld single and triple chamber atmospheric pressure coaxial dielectric barrier discharge driven by Flyback circuitry for helium and argon discharges is described. The Flyback uses external metal-oxide-semiconductor field-effect transistor power switching technology and the transformer operates in the continuous current mode to convert a continuous dc power of 10–33 W to generate a 1.2–1.6 kV 3.5 μs pulse. An argon discharge breakdown voltage of ∼768 V is measured. With a 50 kHz, pulse repetition rate and an argon flow rate of 0.5–10 argon slm (slm denotes standard liters per minute), the electrical power density deposited in …
Valley Splitting In Si Quantum Dots Embedded In Sige, Srikant Srinivasan
Valley Splitting In Si Quantum Dots Embedded In Sige, Srikant Srinivasan
Srikant Srinivasan
We examine energy spectra of Si quantum dots embedded in Si0.75Ge0.25 buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and valley splitting fluctuates with monolayer frequency as a function of the dot thickness. For dot thicknesses ≤ 6 nm, valley splitting is found to be >150 μeV. Using the unique advantage of atomistic calculations, we analyze the effect of buffer disorder on valley splitting. Disorder in the buffer leads to the suppression of valley splitting by a factor of 2.5; the splitting fluctuates with ≈ 20 μeV …
Design A Pin Diode Switch For High-Linearity Applications, Chin-Leong Lim
Design A Pin Diode Switch For High-Linearity Applications, Chin-Leong Lim
Chin-Leong Lim
This paper describes the semiconductor technology, packaging and characterization of a new PIN diode for switching WCDMA signal up to 10W. PIN semiconductor technology was picked as the basis for this switch because of the various performance and reliability advantages that can be had. A model for the PIN diode is generated based on the measured RF performance. How the various model parameters affect the RF performance is also discussed. This is followed by an application description of a 2.0 GHz switch based on the said model and a discussion of some circuit changes to further improve the performance. The …
Rf Applications Of Pin Diodes, Chin-Leong Lim
Rf Applications Of Pin Diodes, Chin-Leong Lim
Chin-Leong Lim
PIN diodes are the ubiquitous "nuts & screws" components that hold together RF equipment as varied as the television, radio, 2-way radios, WLAN equipment etc. This talk covers PIN diode characteristics and RF applications such as switches, attenuators and limiters. Performance improvement techniques will also be discussed.
A Timer Module For An 8051 Microcontroller, Troy England
A Timer Module For An 8051 Microcontroller, Troy England
Electrical Engineering Undergraduate Honors Theses
A timer module for an 8051 Microcontroller is designed from the ground up. It could potentially be integrated into a larger 8051 for use in lunar and Martian missions. It follows through a synchronous digital design flow from HDL code through layout verification. The timer shows functionality at 100MHz with some minor glitches.
Measurement Of Absolute Argon Excited State Populations And Electron Energy Distribution Functions In An Ar-A-Si Plasma, Katherine Herring
Measurement Of Absolute Argon Excited State Populations And Electron Energy Distribution Functions In An Ar-A-Si Plasma, Katherine Herring
Electrical Engineering Undergraduate Honors Theses
Deposition systems utilizing plasma are used for a variety of tasks, including tool coatings and creating thin-film materials. In order to have repeatable results, the internal conditions of a plasma chamber need to be known. This project centered on the use of data from optical emissions and a Langmuir probe from an argon plasma amorphous silicon depositing system. An electron energy distribution function (EEDF) was obtained from manipulation of the Langmuir probe data. This EEDF was then input to an argon collisional-radiative model (CRM) to obtain the electron population of the 4p level of the argon plasma. Through an absolute …
Real-Time Plasma Controlled Chemistry In A Two-Frequency, Confined Plasma Etcher, Vladimir Milosavljevic, Albert R. Ellingboe, Cezar Gaman, John V. Ringwood
Real-Time Plasma Controlled Chemistry In A Two-Frequency, Confined Plasma Etcher, Vladimir Milosavljevic, Albert R. Ellingboe, Cezar Gaman, John V. Ringwood
Articles
The physics issues of developing model-based control of plasma etching are presented. A novel methodology for incorporating real-time model-based control of plasma processing systems is developed. The methodology is developed for control of two dependent variables (ion flux and chemical densities) by two independent controls (27 MHz power and O2flow). A phenomenological physics model of the nonlinear coupling between the independent controls and the dependent variables of the plasma is presented. By using a design of experiment, the functional dependencies of the response surface are determined. In conjunction with the physical model, the dependencies are used to deconvolve the sensor …
Cut Loss In Low-Voltage, Wideband Pin Attenuators, Chin-Leong Lim
Cut Loss In Low-Voltage, Wideband Pin Attenuators, Chin-Leong Lim
Chin-Leong Lim
Many RF applications, including Cable and Satellite TV (CATV / SATV) networks, rely on voltage-variable attenuators (VVAs) for gain adjustment. VVAs consisting of PIN diodes arranged as a PI network are popular in CATV / SATV service owing to their constant impedance, high linearity, multi-decade bandwidth, low part count and compactness. When fabricated from thick bulk PIN diodes for high linearity, the PI VVA configuration typically requires a 0-15V control range. But modern equipment typically operates at 5V or less. Capping the control voltage at 5V adversely raises the VVA's minimum attenuation. To enable low voltage operation without degrading the …
Sensitivity Analysis Of Algan/Gan Hemts To Process Variation, Adam J. Liddle
Sensitivity Analysis Of Algan/Gan Hemts To Process Variation, Adam J. Liddle
Theses and Dissertations
A sensitivity analysis of AlGaN/GaN HEMT performance on material and process variations was performed. Aluminum mole fraction, barrier thickness, and gate length were varied ± 5% over nominal values to determine how sensitive simulated device performance was to changes in these 3 parameters. Simulated data was generated with the Synopsys TCAD software suite using a physics-based HEMT model. To validate model performance, simulated data was correlated with experimental data, which consisted of wafer epilayer characterization data as well as DC and small-signal RF device performance data from 1-26 GHz. Trends were observed in the experimental data due to variations in …
An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das
An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das
Electrical & Computer Engineering Faculty Research
Nanoparticles of metals and semiconductors are promising for the implementation of a variety of photonic and electronic devices with superior performances and new functionalities. However, their successful implementation has been limited due to the lack of appropriate fabrication processes that are suitable for volume manufacturing. The current techniques for the fabrication of nanoparticles either are solution based, thus requiring complex surface passivation, or have severe constraints over the choice of particle size and material. We have developed an ultrahigh vacuum system for the implementation of a complex nanosystem that is flexible and compatible with the silicon integrated circuit process, thus …
Dual Band Dual Polarized Antenna With High Efficiency For Base Transceiver Stations, F. H. Kashani, M. Shahpari, Hossein Ameri Mahabadi
Dual Band Dual Polarized Antenna With High Efficiency For Base Transceiver Stations, F. H. Kashani, M. Shahpari, Hossein Ameri Mahabadi
Hossein Ameri Mahabadi
In this paper new array element for use in dual band dual polarized antenna will be introduced that has high efficiency (more than 95%) and has high isolation in both 900MHz and 1800MHz bands. Also radiation pattern of this antenna is according to IEC recommendation.
A Novel Bandpass Waveguide Filter Structure On Siw Technology, Z. Sotoodeh, B. Biglarbegian, F. Hojat Kashani, Hossein Ameri Mahabadi
A Novel Bandpass Waveguide Filter Structure On Siw Technology, Z. Sotoodeh, B. Biglarbegian, F. Hojat Kashani, Hossein Ameri Mahabadi
Hossein Ameri Mahabadi
Taking the advantage of common waveguide filters and SIW technology, a new filter structure is proposed.This structure can be implemented for various microwave frequencies by choosing appropriate low loss substrates.An example of suggested structure in Ku band is presented in this paper.The filter is designed and simulated on a low loss RT/Duroid 5880 laminate.The resulted filter has a Quality factor around 150.The main advantage of the structure is low size and cost, simplicity in fabrication, and the ability of integration with other elements of the circuit
Response Characterization Of Electroactive Polymers As Mechanical Sensors, G. Alici, Geoffrey M. Spinks, J. D. Madden, Y. Wu, G G. Wallace
Response Characterization Of Electroactive Polymers As Mechanical Sensors, G. Alici, Geoffrey M. Spinks, J. D. Madden, Y. Wu, G G. Wallace
Faculty of Engineering - Papers (Archive)
The characterization of the dynamic response (including transfer function identification) of trilayer polypyrrole (PPy) type conducting polymer sensors is presented. The sensor was built like a cantilever beam with the free end stimulated through a mechanical lever system, which provided displacement inputs. The voltage generated and current passing between the two outer PPy layers as a result of the input was measured to model the output/input behavior of the sensors based on their experimental current/displacement and voltage/displacement frequency responses. We specifically targeted the low-frequency behavior of the sensor as it is a relatively slowsystem. Experimental transfer function models were generated …
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Faculty Publications
This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept …