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Electronic Devices and Semiconductor Manufacturing Commons™

Open Access. Powered by Scholars. Published by Universities.®

2002

Articles 1 - 7 of 7

Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman Jun 2002

Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …

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Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska Apr 2002

Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska

Faculty Publications

We present experimental and modeling results on the gate-length dependence of the maximum current that can be achieved in GaN-based heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs). Our results show that the factor limiting the maximum current in the HFETs is the forward gate leakage current. In the MOSHFETs, the gate leakage current is suppressed and the overflow of the two dimensional electron gas into the AlGaN barrier region becomes the most important factor limiting the maximum current. Therefore, the maximum current is substantially higher in MOSHFETs than in HFETs. The measured maximum current increases with a decrease in the gate …

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Fabrication Techniques For Iii-V Micro-Opto-Electro-Mechanical Systems, Jeremy A. Raley Mar 2002

Fabrication Techniques For Iii-V Micro-Opto-Electro-Mechanical Systems, Jeremy A. Raley

Theses and Dissertations

This thesis studies selective etching techniques for the development of AlxGa1-xAs micro-opto-electro-mechanical systems (MOEMS). New MEMS technology based on materials such as AlxGa1-xAs enables the development of micro-systems with embedded active micro-optical devices. Tunable micro-lasers and optical switching based on MOEMS technology will improve future wavelength division multiplexing (WDM) systems. WDM vastly increases the speed of military communications and sensor data processing. From my designs, structures are prepared by molecular beam epitaxy. I design a mask set for studies of crystal plane selectivity. I perform a series of experiments on the selective …

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Design And Fabrication Of Micro-Electro-Mechanical Structures For Tunable Micro-Optical Devices, Michael C. Harvey Mar 2002

Design And Fabrication Of Micro-Electro-Mechanical Structures For Tunable Micro-Optical Devices, Michael C. Harvey

Theses and Dissertations

Tunable micro-optical devices are expected to be vital for future military optical communication systems. In this research I seek to optimize the design of a microelectromechanical (MEM) structure integrated with a III-V semiconductor micro-optical device. The resonant frequency of an integrated optical device, consisting of a Fabry-Perot etalon or vertical cavity surface emitting laser (VCSEL), may be tuned by applying an actuation voltage to the MEM Flexure, thereby altering the device's optical cavity length. From my analysis I demonstrate tunable devices compatible with conventional silicon 5V integrated circuit technology. My design for a Fabry-Perot etalon has a theoretical tuning range …

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Co-Polymers Of Furan With Pyrrole Or Thiophene: A Synthetic Study, Rose M. Mcconnell, Walter E. Godwin, Susan E. Baker, Kenya Powell, Martha Baskett, Amy Morara, Xiadong Ma Jan 2002

Co-Polymers Of Furan With Pyrrole Or Thiophene: A Synthetic Study, Rose M. Mcconnell, Walter E. Godwin, Susan E. Baker, Kenya Powell, Martha Baskett, Amy Morara, Xiadong Ma

Journal of the Arkansas Academy of Science

The use of conductive polymers as a substitute for metallic conductors and semiconductors has attracted much attention in the literature. In particular, aromatic heterocyclic polymers constitute an important class since they possess chemical and electrical stability in both the oxidized (doped) and neutral (undoped) state. Doping a polymer allows one to vary its electrical, mechanical, optical, and thermal properties. The properties of these polymers are promising for their many technological uses such as antistatic coatings, solar cells, and electronic devises. Polyfuran is among the least common heterocyclic polymers. Polyfuran has been reported to be much less stable that either polypyrrole …

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The Need For Pfc Abatement In Semiconductor Manufacturing, Mohsen Manesh, Brian Kendrick Jan 2002

The Need For Pfc Abatement In Semiconductor Manufacturing, Mohsen Manesh, Brian Kendrick

Inquiry: The University of Arkansas Undergraduate Research Journal

Perfluorocompounds (PFCs) are highly stable chemical compounds used in two integral steps of semiconductor manufacturing: chemical vapor deposition (CVD) chambers and etch chambers. Unfortunately, PFCs are also greenhouse gases linked to global warming. This, combined with their long atmospheric lifetimes gives them global warming potentials much higher than C02 the principal greenhouse gas. In a series of voluntary agreements with the United States and other national governments, the worldwide semiconductor industry has set a goal of reducing PFC emissions to 90% of their 1995 levels. To reach this goal, researchers have explored four main methods of reduction: substitution of PFCs, …

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Pattern-Sensitive Deposition For Damascene Processing, M Hussein, A Myers, Charles H. Recchia, S Sivakumar, A Kandas Jan 2002

Pattern-Sensitive Deposition For Damascene Processing, M Hussein, A Myers, Charles H. Recchia, S Sivakumar, A Kandas

Charles H Recchia

No abstract provided.

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