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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Investigation Of Host Nanotube Parameters For Enhancing The Performance Of Nanostructured Cds-Cdte Solar Cells, Deepak Kumar
Investigation Of Host Nanotube Parameters For Enhancing The Performance Of Nanostructured Cds-Cdte Solar Cells, Deepak Kumar
Theses and Dissertations--Electrical and Computer Engineering
Numerical simulations are performed to investigate the effects of host nanotube parameters (pore diameter and pitch for different CdS coverages) and CdTe doping density on device performance in nanowire CdS/ CdTe solar cells using SCAPS-1D. This research finds the optimum values for these parameters in order to achieve the highest efficiency. Experimentally the effect of anodization voltage and fluoride ion concentration on the pore diameter and the pitch are studied for the Titania nanotubes host. It is observed that in the range of 0.3 mL to 2 mL of ammonium fluoride content, pore diameter and the pitch of the Titania …
Optical And Electrical Analysis Of Zno/Znte Micropillar Solar Cells, Sadia Binte Sohid
Optical And Electrical Analysis Of Zno/Znte Micropillar Solar Cells, Sadia Binte Sohid
Master’s Theses
The prime focus of the energy-research community in recent times has been replacing fossil fuels with renewable energy. Therefore, photovoltaic research areas are rapidly expanding in this era. The purpose of this work is to compare three different structural ZnO/ZnTe solar cell types (planar, axial micropillar and radial micropillar). The best optical and electrical performance has been obtained by the radial junction (core-shell) ZnO/ZnTe micropillar solar cell due to its pillar structure and radial junction. The unique advantage of the radial junction micropillar is that the angle of the incident light and the carrier collection is orthogonal. Therefore, the pillar …
Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks
Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks
Graduate Theses and Dissertations
The first-ever 1.7kV 8A SiC physics-based compact SPICE model is developed for behavior prediction, modeling and simulation of the GeneSiC “Super” Junction Transistor. The model implements Gummel-Poon based equations and adds a quasi-saturation collector series resistance representation from a 1.2 kV, 6 A SiC bipolar junction transistor model developed in Hangzhou, China. The model has been validated with the GA08JT17-247 device data representing both static and dynamic characteristics from GeneSiC. Parameter extraction was performed in IC-CAP and results include plots showing output characteristics, capacitance versus voltage (C-V), and switching characteristics for 25 °C, 125 °C, and 175 °C temperatures.
Study Of Direct Semiconductor Materials For An Optically Controlled Switch, Sung Taek Ko
Study Of Direct Semiconductor Materials For An Optically Controlled Switch, Sung Taek Ko
Electrical & Computer Engineering Theses & Dissertations
A model for a bulk GaAs photoconductive switch has been developed and solved to determine the performance of the device in closing and opening switch applications. The GaAs material has been characterized by deep level transient spectroscopy (DLTS). Two electron traps (EL2 and EL5) and one hole trap (CuB} have been detected and were included in the model. Simulation studies are performed on several GaAs switch systems composed of different combinations and density of deep levels to investigate the influence of deep traps in a photoconductive switch system. The electron occupancy of each deep trap is traced in …