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Electronic Devices and Semiconductor Manufacturing Commons™
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- Absorber layers (1)
- Al composition (1)
- Aluminum (1)
- Bowing parameters (1)
- Composition ranges (1)
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- Electric measurements (1)
- Elemental evaporation (1)
- Field effect transistors (1)
- Heterojunctions (1)
- High-efficiency solar cells (1)
- Lattice spacing (1)
- Leakage currents (1)
- MODFETs (1)
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- Semiconducting selenium compounds (1)
- Spectroscopic ellipsometry (1)
- Subband-gap (1)
- Thin films (1)
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Articles 1 - 2 of 2
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Electrical & Computer Engineering Faculty Publications
CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …
Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska
Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska
Faculty Publications
We present experimental and modeling results on the gate-length dependence of the maximum current that can be achieved in GaN-based heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs). Our results show that the factor limiting the maximum current in the HFETs is the forward gate leakage current. In the MOSHFETs, the gate leakage current is suppressed and the overflow of the two dimensional electron gas into the AlGaN barrier region becomes the most important factor limiting the maximum current. Therefore, the maximum current is substantially higher in MOSHFETs than in HFETs. The measured maximum current increases with a decrease in the gate …