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Articles 1 - 7 of 7
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Cut Part Count And Increase Dynamic Range In The Hybrid Coupled Attenuator, Chin-Leong Lim
Cut Part Count And Increase Dynamic Range In The Hybrid Coupled Attenuator, Chin-Leong Lim
Chin-Leong Lim
Modern digital modulation formats are generally phase-sensitive. Therefore, the variable attenuators in digital wireless equipment should exhibit minimal phase variation over attenuation. The hybrid coupled attenuator (HCA) has substantially less phase variation than the competing constant-impedance attenuators such as the Pi and the Bridged-T. At microwave frequencies, HCA implementations tend to suffer from reduced dynamic (attenuation) range due to component parasitics, especially when plastic-packaged PIN diodes are selected to lower cost. To maximize the dynamic range in a low-cost 1.9 GHz HCA , we first identified the critical components and then compensated for their deleterious effect. This paper describes the …
Valley Splitting In Si Quantum Dots Embedded In Sige, Srikant Srinivasan
Valley Splitting In Si Quantum Dots Embedded In Sige, Srikant Srinivasan
Srikant Srinivasan
We examine energy spectra of Si quantum dots embedded in Si0.75Ge0.25 buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and valley splitting fluctuates with monolayer frequency as a function of the dot thickness. For dot thicknesses ≤ 6 nm, valley splitting is found to be >150 μeV. Using the unique advantage of atomistic calculations, we analyze the effect of buffer disorder on valley splitting. Disorder in the buffer leads to the suppression of valley splitting by a factor of 2.5; the splitting fluctuates with ≈ 20 μeV …
Design A Pin Diode Switch For High-Linearity Applications, Chin-Leong Lim
Design A Pin Diode Switch For High-Linearity Applications, Chin-Leong Lim
Chin-Leong Lim
This paper describes the semiconductor technology, packaging and characterization of a new PIN diode for switching WCDMA signal up to 10W. PIN semiconductor technology was picked as the basis for this switch because of the various performance and reliability advantages that can be had. A model for the PIN diode is generated based on the measured RF performance. How the various model parameters affect the RF performance is also discussed. This is followed by an application description of a 2.0 GHz switch based on the said model and a discussion of some circuit changes to further improve the performance. The …
Rf Applications Of Pin Diodes, Chin-Leong Lim
Rf Applications Of Pin Diodes, Chin-Leong Lim
Chin-Leong Lim
PIN diodes are the ubiquitous "nuts & screws" components that hold together RF equipment as varied as the television, radio, 2-way radios, WLAN equipment etc. This talk covers PIN diode characteristics and RF applications such as switches, attenuators and limiters. Performance improvement techniques will also be discussed.
Cut Loss In Low-Voltage, Wideband Pin Attenuators, Chin-Leong Lim
Cut Loss In Low-Voltage, Wideband Pin Attenuators, Chin-Leong Lim
Chin-Leong Lim
Many RF applications, including Cable and Satellite TV (CATV / SATV) networks, rely on voltage-variable attenuators (VVAs) for gain adjustment. VVAs consisting of PIN diodes arranged as a PI network are popular in CATV / SATV service owing to their constant impedance, high linearity, multi-decade bandwidth, low part count and compactness. When fabricated from thick bulk PIN diodes for high linearity, the PI VVA configuration typically requires a 0-15V control range. But modern equipment typically operates at 5V or less. Capping the control voltage at 5V adversely raises the VVA's minimum attenuation. To enable low voltage operation without degrading the …
Dual Band Dual Polarized Antenna With High Efficiency For Base Transceiver Stations, F. H. Kashani, M. Shahpari, Hossein Ameri Mahabadi
Dual Band Dual Polarized Antenna With High Efficiency For Base Transceiver Stations, F. H. Kashani, M. Shahpari, Hossein Ameri Mahabadi
Hossein Ameri Mahabadi
In this paper new array element for use in dual band dual polarized antenna will be introduced that has high efficiency (more than 95%) and has high isolation in both 900MHz and 1800MHz bands. Also radiation pattern of this antenna is according to IEC recommendation.
A Novel Bandpass Waveguide Filter Structure On Siw Technology, Z. Sotoodeh, B. Biglarbegian, F. Hojat Kashani, Hossein Ameri Mahabadi
A Novel Bandpass Waveguide Filter Structure On Siw Technology, Z. Sotoodeh, B. Biglarbegian, F. Hojat Kashani, Hossein Ameri Mahabadi
Hossein Ameri Mahabadi
Taking the advantage of common waveguide filters and SIW technology, a new filter structure is proposed.This structure can be implemented for various microwave frequencies by choosing appropriate low loss substrates.An example of suggested structure in Ku band is presented in this paper.The filter is designed and simulated on a low loss RT/Duroid 5880 laminate.The resulted filter has a Quality factor around 150.The main advantage of the structure is low size and cost, simplicity in fabrication, and the ability of integration with other elements of the circuit