Electronic Devices and Semiconductor Manufacturing Commons^™

0.5w High Linearity Power Amplifier For Broadband Wireless (3.3 ~ 3.9 Ghz), Chin-Leong Lim

Chin-Leong Lim

This paper presents a 0.5 Watt amplifier that operates over the 3.3 ~ 3.9 GHz range. The target applications are pre-driver in base-stations and power amplifier in subscriber units. The design marries good Third Order Output Intercept Point (OIP3) and exceptional Power Added Efficiency (PAE) at IdB gain compression point (PldB). The performances are: -G = 11.8 dB, IRL & ORL < -8 dB, PldB = 28.5 dBm and OIP3 = 42.6 dBm. The superior performance is achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement mode pHEMT process. The device requires simple matching components to achieve wide bandwidth because of the built-in input pre-match. From the reliability standpoint, pHEMT devices are eminently suited to PA use -the drain to source resistance (RDSon) will inherently rise to counteract the thermal runaway that blights bipolar and HBT PAs. The internal bias circuit is temperature compensated and can be adjusted for either class A or class AB operation. The device is housed inside a standard 16 pin LPCC 3X3 package.