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Electronic Devices and Semiconductor Manufacturing Commons™

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Selected Works

2007

Articles 1 - 6 of 6

Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Agricultural Applications For Electromagnetic Exposure, H. Aliakbarian, A. Enayati, Hossein Ameri Mahabadi, M. Ashayer Soltani Dec 2007

Agricultural Applications For Electromagnetic Exposure, H. Aliakbarian, A. Enayati, Hossein Ameri Mahabadi, M. Ashayer Soltani

Hossein Ameri Mahabadi

Despite the advances in bug controlling and antifreezing operations of agricultural products, the devastation of Sunne pests and freezing is still enormous. Traditional treatments such as chemical insecticides for bug controlling and covering to avoid freezing have not been sufficient. In the presented paper, new ideas of using electromagnetic treatment for anti-freezing operation, pre-harvest Sunne pest control, and Orchid flower control are introduced.

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A Novel Method Of Detecting Missing Parallel/Multiple Bond-Wires In Microwave Transistors That Is Amenable To Integration With Automated Test Handlers, Chin-Leong Lim Nov 2007

A Novel Method Of Detecting Missing Parallel/Multiple Bond-Wires In Microwave Transistors That Is Amenable To Integration With Automated Test Handlers, Chin-Leong Lim

Chin-Leong Lim

A method of detecting a missing parallel-connected bond-wires in packaged microwave transistors is described. Instead of the conventional way of testing the transistor in the amplifier configuration, the new method tests the device as an oscillator. Using the oscillation frequency as the screening criterion reduces test complexity and allows easy integration with existing automated test handlers

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0.5w High Linearity Power Amplifier For Broadband Wireless (3.3 ~ 3.9 Ghz), Chin-Leong Lim Oct 2007

0.5w High Linearity Power Amplifier For Broadband Wireless (3.3 ~ 3.9 Ghz), Chin-Leong Lim

Chin-Leong Lim

This paper presents a 0.5 Watt amplifier that operates over the 3.3 ~ 3.9 GHz range. The target applications are pre-driver in base-stations and power amplifier in subscriber units. The design marries good Third Order Output Intercept Point (OIP3) and exceptional Power Added Efficiency (PAE) at IdB gain compression point (PldB). The performances are: -G = 11.8 dB, IRL & ORL < -8 dB, PldB = 28.5 dBm and OIP3 = 42.6 dBm. The superior performance is achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement mode pHEMT process. The device requires simple matching components to achieve wide bandwidth because of the built-in input pre-match. From the reliability standpoint, pHEMT devices are eminently suited to PA use -the drain to source resistance (RDSon) will inherently rise to counteract the thermal runaway that blights bipolar and HBT PAs. The internal bias circuit is temperature compensated and can be adjusted for either class A or class AB operation. The device is housed inside a standard 16 pin LPCC 3X3 package.

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Tackle Wideband Rf Switching With Pin Diodes, Chin-Leong Lim Jan 2007

Tackle Wideband Rf Switching With Pin Diodes, Chin-Leong Lim

Chin-Leong Lim

PIN diodes make cheaper, faster and more reliable RF switches than the mechanical competition. The two methods of constructing PIN diodes, bulk and epitaxial, result in significantly different bias current, linearity and lower frequency limit. This paper compares the wideband series switching performances of a bulk PIN diode (w = 22.5 um, Tau = 300 ns) and an epitaxial diode (w = 6.5 um, Tau = 180 ns) in similar low-cost, miniature SOD-323 packages. Through simulation and experiment, we detected significant differences in insertion loss, isolation, and third-order intercept (IP3) performances between the two diode types. In conclusion, the design …

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On-Chip Implementation Of High Speed And High Resolution Pipeline Radix 2 Fft Algorithm, Rozita Teymourzadeh, Masuri Othman Dec 2006

On-Chip Implementation Of High Speed And High Resolution Pipeline Radix 2 Fft Algorithm, Rozita Teymourzadeh, Masuri Othman

Dr. Rozita Teymourzadeh, CEng.

A new on-chip implementation of Fast Fourier Transform (FFT) based on Radix 2 is presented. The pipeline and parallel approaches are combined to introduce a new high speed FFT algorithm which increases resolution by using floating point calculations in its structures. The design has the merits of low complexity and high speed performance. Furthermore, latency reduction is an important issue to implement the high speed FFT on FPGA. The proposed FFT algorithm shows the latency of (N/2 log(2) N) + 11. Moreover, this algorithm has the advantage of low mean squared error (MSE) of 0.0001 which is preferable to Radix …

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Vlsi Implementation Of High Speed And High Resolution Fft Algorithm Based On Radix 2 For Dsp Application, Nooshin Mahdavi, Rozita Teymourzadeh, Masuri Othman Dec 2006

Vlsi Implementation Of High Speed And High Resolution Fft Algorithm Based On Radix 2 For Dsp Application, Nooshin Mahdavi, Rozita Teymourzadeh, Masuri Othman

Dr. Rozita Teymourzadeh, CEng.

Using Fast Fourier Transform (FFT) is indispensable in most signal processing applications. Designing an appropriate algorithm for the implementation of FFT can be efficacious in digital signal processing. Sophisticated techniques such as pipelining and parallel calculations have potential impacts on VLSI implementation of FFT algorithm. Furthermore, a mathematic approach such as floating point calculation achieves higher precision. In this paper, an efficient algorithm with using parallel and pipelining methods is proposed to implement high speed and high resolution FFT algorithm. Latency reduction is an important issue to implement the high speed FFT on FPGA. The Proposed FFT algorithm shows the …

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