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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Electromagnon Excitation In Cupric Oxide Measured By Fabry-Pérot Enhanced Terahertz Mueller Matrix Ellipsometry, Sean Knight, Dharmalingam Prabhakaran, Christian Binek, Mathias Schubert
Electromagnon Excitation In Cupric Oxide Measured By Fabry-Pérot Enhanced Terahertz Mueller Matrix Ellipsometry, Sean Knight, Dharmalingam Prabhakaran, Christian Binek, Mathias Schubert
Christian Binek Publications
Here we present the use of Fabry-Pérot enhanced terahertz (THz) Mueller matrix ellipsometry to measure an electromagnon excitation in monoclinic cupric oxide (CuO). As a magnetically induced ferroelectric multiferroic, CuO exhibits coupling between electric and magnetic order. This gives rise to special quasiparticle excitations at THz frequencies called electromagnons. In order to measure the electromagnons in CuO, we exploit single-crystal CuO as a THz Fabry-Pérot cavity to resonantly enhance the excitation’s signature. This enhancement technique enables the complex index of refraction to be extracted. We observe a peak in the absorption coefficient near 0.705 THz and 215 K, which corresponds …
Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson
Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson
Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research
Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon …
Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li
Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li
Alexei Gruverman Publications
As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed …