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Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
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- Light guides (3)
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Articles 1 - 17 of 17
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler
Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler
Faculty Publications
Ferroelectricity in hafnium zirconium oxide (Hf1−xZrxO2) and the factors that impact it have been a popular research topic since its discovery in 2011. Although the general trends are known, the interactions between fabrication parameters and their effect on the ferroelectricity of Hf1−xZrxO2 require further investigation. In this paper, we present a statistical study and a model that relates Zr concentration (x), film thickness (tf), and annealing temperature (Ta) with the remanent polarization (Pr) in tungsten (W)-capped Hf1−xZrxO2. …
Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim
Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim
Faculty Publications
Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro-robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO2) thin film is …
Method Of Evanescently Coupling Whispering Gallery Mode Optical Resonators Using Liquids, Hengky Chandrahalim, Kyle T. Bodily
Method Of Evanescently Coupling Whispering Gallery Mode Optical Resonators Using Liquids, Hengky Chandrahalim, Kyle T. Bodily
AFIT Patents
The present invention relates to evanescently coupling whispering gallery mode optical resonators having a liquid coupling as well as methods of making and using same. The aforementioned evanescently coupling whispering gallery mode optical resonators having a liquid couplings provide increased tunability and sensing selectivity over current same. The aforementioned. Applicants’ method of making evanescent-wave coupled optical resonators can be achieved while having coupling gap dimensions that can be fabricated using standard photolithography. Thus economic, rapid, and mass production of coupled WGM resonators-based lasers, sensors, and signal processors for a broad range of applications can be realized.
Transition-Metal Ions In Β-Ga2O3 Crystals: Identification Of Ni Acceptors, Timothy D. Gustafson, Nancy C. Giles, Brian C. Holloway, J. Jesenovec, B. L. Dutton, M. D. Mccluskey, Larry E. Halliburton
Transition-Metal Ions In Β-Ga2O3 Crystals: Identification Of Ni Acceptors, Timothy D. Gustafson, Nancy C. Giles, Brian C. Holloway, J. Jesenovec, B. L. Dutton, M. D. Mccluskey, Larry E. Halliburton
Faculty Publications
Excerpt: Transition-metal ions (Ni, Cu, and Zn) in β-Ga2O3 crystals form deep acceptor levels in the lower half of the bandgap. In the present study, we characterize the Ni acceptors in a Czochralski-grown crystal and find that their (0/−) level is approximately 1.40 eV above the maximum of the valence band.
Noncontact Liquid Crystalline Broadband Optoacoustic Sensors, Hengky Chandrahalim, Michael T. Dela Cruz
Noncontact Liquid Crystalline Broadband Optoacoustic Sensors, Hengky Chandrahalim, Michael T. Dela Cruz
AFIT Patents
An optoacoustic sensor includes a liquid crystal (LC) cell formed between top and bottom plates of transparent material. A transverse grating formed across the LC cell that forms an optical transmission bandgap. A CL is aligned to form a spring-like, tunable Bragg grating that is naturally responsive to external agitations providing a spectral transition regime, or edge, in the optical transmission bandgap of the transverse grating that respond to broadband acoustic waves. The optoacoustic sensor includes a narrowband light source that is oriented to transmit light through the top plate, the LC cell, and the bottom plate. The optoacoustic sensor …
Hinged Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim
Hinged Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim
AFIT Patents
A passive microscopic Fabry-Pérot Interferometer (FPI) sensor includes a three-dimensional microscopic optical structure formed on a cleaved tip of the optical fighter using a two-photon polymerization process on a photosensitive polymer by a three-dimensional micromachining device. The three-dimensional microscopic optical structure having a hinged optical layer pivotally connected to a distal portion of a suspended structure. A reflective layer is deposited on a mirror surface of the hinged optical layer while in an open position. The hinged optical layer is subsequently positioned in the closed position to align the mirror surface to at least partially reflect a light signal back …
Method Of Making Hinged Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim
Method Of Making Hinged Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim
AFIT Patents
A method is provided for fabricating a passive optical sensor on a tip of an optical fiber. The method includes perpendicularly cleaving a tip of an optical fiber and mounting the tip of the optical fiber in a specimen holder of a photosensitive polymer three-dimensional micromachining machine. The method includes forming a three-dimensional microscopic optical structure within the photosensitive polymer that comprises a two cavity Fabry-Perot Interferometer (FPI) having a hinged optical layer that is pivotally coupled to a suspended structure. The method includes removing an uncured portion of the photosensitive polymer using a solvent. The method includes depositing a …
Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
AFIT Patents
A passive microscopic Fabry-Pérot Interferometer (FPI) sensor an optical fiber a three-dimensional microscopic optical structure formed on a cleaved tip of an optical fighter that reflects a light signal back through the optical fiber. The reflected light is altered by refractive index changes in the three-dimensional structure that is subject to at least one of: (i) thermal radiation; and (ii) volatile organic compounds.
Method Of Making Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
Method Of Making Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
AFIT Patents
A method of making passive microscopic Fabry-Pérot Interferometer (FPI) sensor includes forming a three-dimensional microscopic optical structure on a cleaved tip of an optical fiber that reflects a light signal back through the optical fiber. The reflected light is altered by refractive index changes in the three-dimensional structure that is subject to at least one of: (i) thermal radiation; and (ii) volatile organic compounds.
Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
AFIT Patents
A passive microscopic Fabry-Pérot Interferometer (FPI) sensor an optical fiber a three-dimensional microscopic optical structure formed on a cleaved tip of an optical fighter that reflects a light signal back through the optical fiber. The reflected light is altered by refractive index changes in the three-dimensional structure that is subject to at least one of: (i) thermal radiation; and (ii) volatile organic compounds.
Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Faculty Publications
Epitaxial Ge1-ySny (y = 0%–7.5%) alloys grown on either Si or Ge-buffered Si substrates by chemical vapor deposition were studied as a function of Sn content using temperature-dependent photoluminescence (PL). PL emission peaks from both the direct bandgap (Γ-valley) and the indirect bandgap (L-valley) to the valence band (denoted by ED and EID, respectively) were clearly observed at 125 and 175 K for most Ge1-ySny samples studied. At 300 K, however, all of the samples exhibited dominant ED emission with either very weak or no measureable EID emission. At 10 K, …
Optical Metamaterial Design, Fabrication And Test, Jack P. Lombardi
Optical Metamaterial Design, Fabrication And Test, Jack P. Lombardi
Theses and Dissertations
Metamaterials, materials that make use of naturally occurring materials and designed structures to create materials with special properties not found in nature, are a fascinating new area of research, combining the fields of physics, microfabrication, and material science. This work will focus on the development of metamaterials operating in the visible and infrared which will be constructed and tested for basic optical properties. Possible applications for these materials will not be investigated. The this work will go into the fabrication and test of layered metal-dielectric structures, called layered metamaterials, as these structures hold potential for applications in advanced optical systems. …
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Faculty Publications
This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept …
Deviation Of Time-Resolved Luminescence Dynamics In Mwir Semiconductor Materials From Carrier Recombination Theory Predictions, Peter M. Johnson
Deviation Of Time-Resolved Luminescence Dynamics In Mwir Semiconductor Materials From Carrier Recombination Theory Predictions, Peter M. Johnson
Theses and Dissertations
Time resolved luminescence spectroscopy was used to characterize luminescence decay curves for a bulk InAs sample and an InAsSb type-I quantum-well sample over the first 3ns following excitation. The luminescence decay curves were then converted to carrier densities and used to find recombination coefficients that provided the least-squared-error solution of the rate equation describing carrier recombination. Recombination coefficients describing Shockley Read-Hall (ASRH) radiative (Brad) and Auger (CAug) recombination were determined at two different temperatures and four excitation powers, then analyzed for consistency and physical significance. For all of the resulting least …
Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.
Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.
Theses and Dissertations
Modern semiconductor devices are principally made using the element silicon. In recent years, silicon carbide (SiC), with its wide band-gap, high thermal conductivity, and radiation resistance, has shown prospects as a semiconductor material for use in high temperature and radiation environments such as jet engines and satellites. A limiting factor in the performance of many SiC semiconductor components is the presence of lattice defects formed at oxide dielectric junctions during processing. Recent theoretical work has used small quantum mechanical systems embedded in larger molecular mechanics structures to attempt to better understand SiC surfaces and bulk materials and their oxidation. This …
Nlo Waveguide "And" Switch And Method Therefor, John J. Kester, Iyad A. Dajani, Peter M. Ranon, Thomas G. Alley
Nlo Waveguide "And" Switch And Method Therefor, John J. Kester, Iyad A. Dajani, Peter M. Ranon, Thomas G. Alley
AFIT Patents
Method and apparatus are provided for NLO switching by first providing a phase-matched SHG grating which outputs a reinforced SHG beam only when two input beams of frequency (ω) are present in two modes of such wg. The so encoded NLO switch is operated by directing at least two input pulsed laser beams of frequency (ω) into the two modes of the wg to generate a reinforced pulsed output SHG beam and output same from the wg in an NLO switching process. The two input beams desirably have a separate pulse train and the spatial and temporal overlap of the …
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Theses and Dissertations
The p-channel In0.52Al0.48As-GaAs1-xSbx heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In0.52Al0.48As-GaAs1-xSbx p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In0.52Al0.48As-GaAs0.51Sb0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In0.52Al0.48. Third, high acceptor concentrations were obtained …