Open Access. Powered by Scholars. Published by Universities.®

Electronic Devices and Semiconductor Manufacturing Commons™

Open Access. Powered by Scholars. Published by Universities.®

Electrical and Electronics

2008

Articles 1 - 7 of 7

Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Hand-Held Flyback Driven Coaxial Dielectric Barrier Discharge: Development And Characterization, Victor J. Law, Vladimir Milosavljevic, Neil O’Connor, James F. Lalor, Steven Daniels Sep 2008

Hand-Held Flyback Driven Coaxial Dielectric Barrier Discharge: Development And Characterization, Victor J. Law, Vladimir Milosavljevic, Neil O’Connor, James F. Lalor, Steven Daniels

Articles

The development of a handheld single and triple chamber atmospheric pressure coaxial dielectric barrier discharge driven by Flyback circuitry for helium and argon discharges is described. The Flyback uses external metal-oxide-semiconductor field-effect transistor power switching technology and the transformer operates in the continuous current mode to convert a continuous dc power of 10–33 W to generate a 1.2–1.6 kV 3.5 μs pulse. An argon discharge breakdown voltage of ∼768 V is measured. With a 50 kHz, pulse repetition rate and an argon flow rate of 0.5–10 argon slm (slm denotes standard liters per minute), the electrical power density deposited in …

Go to article

A Timer Module For An 8051 Microcontroller, Troy England May 2008

A Timer Module For An 8051 Microcontroller, Troy England

Electrical Engineering Undergraduate Honors Theses

A timer module for an 8051 Microcontroller is designed from the ground up. It could potentially be integrated into a larger 8051 for use in lunar and Martian missions. It follows through a synchronous digital design flow from HDL code through layout verification. The timer shows functionality at 100MHz with some minor glitches.

Go to article

Measurement Of Absolute Argon Excited State Populations And Electron Energy Distribution Functions In An Ar-A-Si Plasma, Katherine Herring May 2008

Measurement Of Absolute Argon Excited State Populations And Electron Energy Distribution Functions In An Ar-A-Si Plasma, Katherine Herring

Electrical Engineering Undergraduate Honors Theses

Deposition systems utilizing plasma are used for a variety of tasks, including tool coatings and creating thin-film materials. In order to have repeatable results, the internal conditions of a plasma chamber need to be known. This project centered on the use of data from optical emissions and a Langmuir probe from an argon plasma amorphous silicon depositing system. An electron energy distribution function (EEDF) was obtained from manipulation of the Langmuir probe data. This EEDF was then input to an argon collisional-radiative model (CRM) to obtain the electron population of the 4p level of the argon plasma. Through an absolute …

Go to article

Real-Time Plasma Controlled Chemistry In A Two-Frequency, Confined Plasma Etcher, Vladimir Milosavljevic, Albert R. Ellingboe, Cezar Gaman, John V. Ringwood Apr 2008

Real-Time Plasma Controlled Chemistry In A Two-Frequency, Confined Plasma Etcher, Vladimir Milosavljevic, Albert R. Ellingboe, Cezar Gaman, John V. Ringwood

Articles

The physics issues of developing model-based control of plasma etching are presented. A novel methodology for incorporating real-time model-based control of plasma processing systems is developed. The methodology is developed for control of two dependent variables (ion flux and chemical densities) by two independent controls (27 MHz power and O2flow). A phenomenological physics model of the nonlinear coupling between the independent controls and the dependent variables of the plasma is presented. By using a design of experiment, the functional dependencies of the response surface are determined. In conjunction with the physical model, the dependencies are used to deconvolve the sensor …

Go to article

Dual Band Dual Polarized Antenna With High Efficiency For Base Transceiver Stations, F. H. Kashani, M. Shahpari, Hossein Ameri Mahabadi Jan 2008

Dual Band Dual Polarized Antenna With High Efficiency For Base Transceiver Stations, F. H. Kashani, M. Shahpari, Hossein Ameri Mahabadi

Hossein Ameri Mahabadi

In this paper new array element for use in dual band dual polarized antenna will be introduced that has high efficiency (more than 95%) and has high isolation in both 900MHz and 1800MHz bands. Also radiation pattern of this antenna is according to IEC recommendation.

Go to article

A Novel Bandpass Waveguide Filter Structure On Siw Technology, Z. Sotoodeh, B. Biglarbegian, F. Hojat Kashani, Hossein Ameri Mahabadi Jan 2008

A Novel Bandpass Waveguide Filter Structure On Siw Technology, Z. Sotoodeh, B. Biglarbegian, F. Hojat Kashani, Hossein Ameri Mahabadi

Hossein Ameri Mahabadi

Taking the advantage of common waveguide filters and SIW technology, a new filter structure is proposed.This structure can be implemented for various microwave frequencies by choosing appropriate low loss substrates.An example of suggested structure in Ku band is presented in this paper.The filter is designed and simulated on a low loss RT/Duroid 5880 laminate.The resulted filter has a Quality factor around 150.The main advantage of the structure is low size and cost, simplicity in fabrication, and the ability of integration with other elements of the circuit

Go to article

Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey Jan 2008

Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey

Faculty Publications

This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept …

Go to article