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Full-Text Articles in Electrical and Electronics
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) Super High Frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Matteo Rinaldi
This paper reports on the analytical modeling and experimental verification of the mechanically-limited power handling and nonlinearity in piezoelectric aluminum nitride (AlN) contour-mode resonators (CMR) having different electrode configurations (thickness field excitation, lateral field excitation, one-port and two-port configurations) and operating at different frequencies (177-3047 MHz). Despite its simplicity, the one-dimensional analytical model fits the experimental behavior of AlN CMRs in terms of power handling capabilities. The model and experiment also confirm the advantage of scaling (i.e. miniaturizing) the AlN CMRs to higher frequencies at which higher critical power density can be more easily attained up to values in excess …
Cross-Sectional Dilation Mode Resonator With Very High Electromechanical Coupling Up To 10% Using Aln, Chengjie Zuo, Changhan Yun, Philip Stephanou, Sang-June Park, Chi-Shun Lo, Robert Mikulka, Je-Hsiung Lan, Mario Velez, Ravi Shenoy, Jonghae Kim, Matt Nowak
Cross-Sectional Dilation Mode Resonator With Very High Electromechanical Coupling Up To 10% Using Aln, Chengjie Zuo, Changhan Yun, Philip Stephanou, Sang-June Park, Chi-Shun Lo, Robert Mikulka, Je-Hsiung Lan, Mario Velez, Ravi Shenoy, Jonghae Kim, Matt Nowak
Chengjie Zuo
For the first time in the development of piezoelectric micromechanical resonators, this paper presents a new class of cross-sectional dilation mode resonators (XDMR) that achieve unprecedentedly high electromechanical coupling constant: kt2 up to 10% for aluminum nitride (AlN) based resonators and 19% for zinc oxide (ZnO) based resonators. Detailed discussions on the geometry design, FEM simulation, and process challenge are provided in this paper to give insight on this novel high-kt2 piezoelectric resonator technology and, more importantly, guide the future development of mechanical resonators with coherent 2D/3D mode shapes.
Aluminum Nitride Reconfigurable Rf-Mems Front-Ends, Augusto Tazzoli, Matteo Rinaldi, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Aluminum Nitride Reconfigurable Rf-Mems Front-Ends, Augusto Tazzoli, Matteo Rinaldi, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
Aluminum Nitride based piezoelectric microelectromechanical systems (MEMS) technology has the potential to develop a fully integrated radio frequency (RF) platform that satisfies the requirements of next-generation communication standards: reconfigurability, miniaturization, and low power consumption. Here we report on the recent developments of this AlN thin-film based technology, namely resonators, filters, oscillators and switches. These examples highlight how MEMS will enable the mass manufacturing of reconfigurable RF front-ends.
Aluminum Nitride Reconfigurable Rf-Mems Front-Ends, Augusto Tazzoli, Matteo Rinaldi, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Aluminum Nitride Reconfigurable Rf-Mems Front-Ends, Augusto Tazzoli, Matteo Rinaldi, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Matteo Rinaldi
Aluminum Nitride based piezoelectric microelectromechanical systems (MEMS) technology has the potential to develop a fully integrated radio frequency (RF) platform that satisfies the requirements of next-generation communication standards: reconfigurability, miniaturization, and low power consumption. Here we report on the recent developments of this AlN thin-film based technology, namely resonators, filters, oscillators and switches. These examples highlight how MEMS will enable the mass manufacturing of reconfigurable RF front-ends.
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) super high frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …
Single-Ended-To-Differential And Differential-To-Differential Channel-Select Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Gianluca Piazza
Single-Ended-To-Differential And Differential-To-Differential Channel-Select Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of single-ended-to-differential and differential-to-differential (S2D and D2D) channel-select filters based on single-layer (SL) and dual-layer-stacked (DLS) AlN contour-mode MEMS resonators. The key filter performances in terms of insertion loss (as low as 1.4 dB), operating frequency (250-1280 MHz), and out-of-band rejection (up to 60 dB) constitute a significant advancement over all other state-of-the-art RF MEMS technologies. The fabrication process, namely stacking of two piezoelectric AlN layers (600 nm each) and three Pt electrode layers (100 nm each), is fully compatible with the previously demonstrated AlN RF MEMS switch process (also post-CMOS compatible), which …
Very High Frequency Channel-Select Mems Filters Based On Self-Coupled Piezoelectric Aln Contour-Mode Resonators, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Very High Frequency Channel-Select Mems Filters Based On Self-Coupled Piezoelectric Aln Contour-Mode Resonators, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Chengjie Zuo
This paper reports experimental results on single-chip multi-frequency channel-select filters based on self-coupled piezoelectric aluminum nitride (AlN) contour-mode microelectromechanical (MEMS) resonators. Two-port AlN contour-mode resonators are connected in series and electrically coupled using their intrinsic capacitance to realize multi-frequency (94–271 MHz), narrow bandwidth (~0.2%), low insertion loss (~2.3 dB), high off-band rejection (~60 dB) and high linearity (IIP3 ~100 dBmV) channel-select filters on the same chip. This technology enables multi-frequency, high-performance and small-form-factor filter arrays and makes a single-chip multi-band reconfigurable radio frequency (RF) solution possible in the near future.
Novel Electrode Configurations In Dual-Layer Stacked And Switchable Aln Contour-Mode Resonators For Low Impedance Filter Termination And Reduced Insertion Loss, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Novel Electrode Configurations In Dual-Layer Stacked And Switchable Aln Contour-Mode Resonators For Low Impedance Filter Termination And Reduced Insertion Loss, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Chengjie Zuo
This paper reports, for the first time, on the design and demonstration of two novel electrode configurations in dual-layer stacked Aluminum Nitride (AlN) piezoelectric contour-mode resonators to obtain low filter termination resistance (down to 300 Ω, which also results in better filter out-of-band rejection) and reduced insertion loss (IL as low as 1.6 dB) in multi-frequency (100 MHz – 1 GHz) AlN MEMS filters. The microfabrication process is fully compatible with the previously demonstrated AlN RF MEMS switches, which makes it possible to design and integrate multi-frequency switchable filter banks on a single chip.
Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super-high-frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt2, in excess of 1.5%. These devices are employed to synthesize …
Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super-high-frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt2, in excess of 1.5%. These devices are employed to synthesize …
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Chengjie Zuo
This paper reports on the analytical modeling and experimental verification of the mechanically-limited power handling and nonlinearity in piezoelectric aluminum nitride (AlN) contour-mode resonators (CMR) having different electrode configurations (thickness field excitation, lateral field excitation, one-port and two-port configurations) and operating at different frequencies (177-3047 MHz). Despite its simplicity, the one-dimensional analytical model fits the experimental behavior of AlN CMRs in terms of power handling capabilities. The model and experiment also confirm the advantage of scaling (i.e. miniaturizing) the AlN CMRs to higher frequencies at which higher critical power density can be more easily attained up to values in excess …
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Matteo Rinaldi
This paper reports on the analytical modeling and experimental verification of the mechanically-limited power handling and nonlinearity in piezoelectric aluminum nitride (AlN) contour-mode resonators (CMR) having different electrode configurations (thickness field excitation, lateral field excitation, one-port and two-port configurations) and operating at different frequencies (177-3047 MHz). Despite its simplicity, the one-dimensional analytical model fits the experimental behavior of AlN CMRs in terms of power handling capabilities. The model and experiment also confirm the advantage of scaling (i.e. miniaturizing) the AlN CMRs to higher frequencies at which higher critical power density can be more easily attained up to values in excess …
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) Super High Frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …
5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza
5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza
Matteo Rinaldi
This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical …
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) Super High Frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …
Demonstration Of Inverse Acoustic Band Gap Structures In Aln And Integration With Piezoelectric Contour Mode Transducers, Nai-Kuei Kuo, Chengjie Zuo, Gianluca Piazza
Demonstration Of Inverse Acoustic Band Gap Structures In Aln And Integration With Piezoelectric Contour Mode Transducers, Nai-Kuei Kuo, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper presents the first design and demonstration of a novel inverse acoustic band gap (IABG) structure in aluminum nitride (AlN) and its direct integration with piezoelectric contour-mode transducers. The experimental results indicate that the IABG structure has a stop band from 185 MHz to 240 MHz and is centered around 219 MHz with maximum rejection of 30 dB. The ABG-induced phonon scattering causes a frequency band gap that prohibits the propagation of certain acoustic wavelengths. In this work, the IABG unit cell consists of a high acoustic velocity (V) center material, which is formed by 2-μm-thick AlN sandwiched by …
Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) Super High Frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) Aluminum Nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt2, in excess of …
Demonstration Of Inverse Acoustic Band Gap Structures In Aln And Integration With Piezoelectric Contour Mode Wideband Transducers, Nai-Kuei Kuo, Chengjie Zuo, Gianluca Piazza
Demonstration Of Inverse Acoustic Band Gap Structures In Aln And Integration With Piezoelectric Contour Mode Wideband Transducers, Nai-Kuei Kuo, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper presents the first design and demonstration of a novel inverse acoustic band gap (IABG) structure in aluminum nitride (AlN) and its direct integration with contour-mode wideband transducers in the Very High Frequency (VHF) range. This design implements an efficient approach to co-fabricate in-plane AlN electro-acoustic transducers with bulk acoustic waves (BAWs) IABG arrays (10x10). The IABG unit cell consists of a cylindrical high acoustic velocity (V) media, which is held by four thin tethers, surrounded by a low acoustic velocity matrix (air). The center media is formed by 2-μm-thick AlN, which is sandwiched by 200-nm-thick top and bottom …
Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) Super High Frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) Aluminum Nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt2, in excess of …
Dual Beam Actuation Of Piezoelectric Aln Rf Mems Switches Integrated With Aln Contour-Mode Resonators, Nipun Sinha, Rashed Mahamameed, Chengjie Zuo, Marcelo B. Pisani, Carlos R. Perez, Gianluca Piazza
Dual Beam Actuation Of Piezoelectric Aln Rf Mems Switches Integrated With Aln Contour-Mode Resonators, Nipun Sinha, Rashed Mahamameed, Chengjie Zuo, Marcelo B. Pisani, Carlos R. Perez, Gianluca Piazza
Marcelo B Pisani
This work reports on piezoelectric Aluminum Nitride (AlN) based dual-beam RF MEMS switches that have been monolithically integrated with AlN contour-mode resonators. The dual-beam switch design presented in this paper intrinsically compensates for the residual stress in the deposited films, requires low actuation voltage (5-20 V), facilitates active pull-off to open the switch and fast switching times (1 to 2 µsec). This work also presents the combined response (cascaded S-parameters) of a resonator and a switch that were co-fabricated on the same substrate. The response shows that the resonator can be effectively turned on and off by the switch. A …
Hybrid Ultra-Compact 4th Order Band-Pass Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Carlos R. Perez, Rashed Mahameed, Marcelo B. Pisani, Gianluca Piazza
Hybrid Ultra-Compact 4th Order Band-Pass Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Carlos R. Perez, Rashed Mahameed, Marcelo B. Pisani, Gianluca Piazza
Chengjie Zuo
This work reports on the design, fabrication and testing of a new class of hybrid (filter design using combined electrical and mechanical coupling techniques) ultra-compact (800×120 μm) 4th order band-pass filters based on piezoelectric Aluminum Nitride (AlN) contour-mode microelectromechanical (MEM) resonators. The demonstrated 110 MHz filter shows a low insertion loss of 5.2 dB in air, a high out-of-band rejection of 65 dB, a fractional bandwidth as high as 1.14% (hard to obtain when only conventional electrical coupling is used in the AlN contour-mode technology), and unprecedented 30 dB and 50 dB shape factors of 1.93 and 2.36, respectively. All …