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Modeling Of Power Semiconductor Devices, Tanya Kirilova Gachovska
Modeling Of Power Semiconductor Devices, Tanya Kirilova Gachovska
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
One of the requirements for choosing a proper power electronic device for a converter is that it must possess a low specific on-resistance. The specific on-resistance of a bipolar device is related to the base width and doping concentration of the lightly doped drift region. This means that the doping concentration and the width of the low-doped base region in a bipolar device must be carefully considered to achieve a desired avalanche breakdown voltage and on-resistance. In order to determine the technological parameters of a semiconductor device, a one dimensional analysis is used to calculate the minimum depletion layer width, …