Electrical and Electronics Commons^™

Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen

Albert B Chen

Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.

Voltage Impulse Induced Bistable Magnetization Switching In Multiferroic Heterostructures, Tianxiang Nan

Tianxiang Nan

We report on voltage impulse induced reversible bistable magnetization switching in FeGaB/lead zirconate titanate (PZT) multiferroic heterostructures at room temperature. This was realized through strain-mediated magnetoelectric coupling between ferroelectric PZT and ferromagnetic FeGaB layer. Two reversible and stable voltage-impulse induced mechanical strain states were obtained in the PZT by applying an electric field impulse with its amplitude smaller than the electric coercive field, which led to reversible voltage impulse induced bistable magnetization switching. These voltage impulse induced bistable magnetization switching in multiferroic heterostructures provides a promising approach to power efficient bistable magnetization switching that is crucial for information storage.

Fpga Implementation Of Pipeline Digit-Slicing Multiplier-Less Radix 2 2 Dif Sdf Butterfly For Fast Fourier Transform Structure, Yazan Samir, Rozita Teymourzadeh, Masuri Othman, Shabiul Islam

Dr. Rozita Teymourzadeh, CEng.

Optimised Toolbox For The Design Of Rotary Reluctance Motors, Grace I, Rozita Teymourzadeh, Bright S, Aravind Cv

Dr. Rozita Teymourzadeh, CEng.