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Full-Text Articles in Engineering

Characterization Of Highly Doped N-Type And P-Type Silicon Carbide Ohmic Contacts, Tanner Rice Dec 2023

Characterization Of Highly Doped N-Type And P-Type Silicon Carbide Ohmic Contacts, Tanner Rice

Graduate Theses and Dissertations

Silicon Carbide (SiC) is a rather new material that possesses unparalleled properties when compared to Silicon. Due to its larger band gap alongside other thermal properties, SiC can survive in hotter, more radiation intensive environments, whether that be within the crust of the earth or in the reaches of space. As a desirable semiconductor for these applications, CMOS is an especially important device due to its low power consumption. However, creating a good contact between the metal and semiconductor optimally requires two different metals for the n -type and the p-type semiconductor. This greatly increases the processing time, as separate …

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Quantitative, Photocurrent Multidimensional Coherent Spectroscopy, Adam Halaoui Nov 2023

Quantitative, Photocurrent Multidimensional Coherent Spectroscopy, Adam Halaoui

Electronic Theses and Dissertations

Multidimensional coherent spectroscopy (MDCS) is a quickly growing field that has a lot of advantages over more conventional forms of spectroscopy. These advantages all come from the fact that MDCS allows us to get time resolved correlated emission and absorption spectra using very precisely chosen interactions between the density matrix and the excitation laser. MDCS spectra gives the researcher a lot of information that can be extracted purely through qualitative analysis. This is possible because state couplings are entirely separated on the spectra, and once we know how to read the data, we can see how carriers transport in the …

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Anomalous Lattice Thermal Conductivity Driven By All-Scale Electron-Phonon Scattering In Bulk Semiconductors, Z. Z. Zhou, Y. C. Yan, X. L. Yang, Yi Xia, G. Y. Wang, X. Lu, X. Y. Zhou May 2023

Anomalous Lattice Thermal Conductivity Driven By All-Scale Electron-Phonon Scattering In Bulk Semiconductors, Z. Z. Zhou, Y. C. Yan, X. L. Yang, Yi Xia, G. Y. Wang, X. Lu, X. Y. Zhou

Mechanical and Materials Engineering Faculty Publications and Presentations

Electron-phonon coupling (EPC) has been broadly considered to govern the charge transport in solids, whereas its effect on thermal conductivity, especially for semiconductors at ambient temperatures, is a widely debated issue in condensed-matter physics. Employing state-of-the-art first-principles calculations to quantify all the possible scattering factors, we show the dominant role of EPC in phonon transport of n-doped GaSb, which yields an unprecedented reduction of lattice thermal conductivity and triggers anomalous temperature-independent behavior. The significant EPC impact hinges on the joint effect of multiple conduction pockets, large EPC strength, and bunched heat-carrying acoustic branches, provoking strong electron-phonon scattering to surpass the …

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Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers May 2023

Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers

Physics Undergraduate Honors Theses

Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …

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Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi Dec 2022

Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi

Graduate Theses and Dissertations

This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …

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High-Throughput Computation Of Interfacial Thermal Management Of Wide-Bandgap Semiconductors, Hao-Wen Chen Oct 2022

High-Throughput Computation Of Interfacial Thermal Management Of Wide-Bandgap Semiconductors, Hao-Wen Chen

Theses and Dissertations

As semiconductor electronics, in particular high electron mobility transistors, get hot in operation, people are trying to incorporate different semiconductor materials to solve the problem of heat dissipation to maintain the device efficiency and performance. In this master thesis, two different packages, LAMMPS and almaBTE, that are focusing on micro-scale and atomic scale respectively, are used to simulate the heat transfer process across interfaces in two different scales. In the LAMMPS simulation, the research is exploring how the location of atoms and the thickness of interfacial layers will influence the interfacial thermal conductance. On the other hand, using the almaBTE …

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Tailoring Interfaces And Composition For Stable And Efficient Perovskite Solar Cells, Hamza Javaid Feb 2022

Tailoring Interfaces And Composition For Stable And Efficient Perovskite Solar Cells, Hamza Javaid

Doctoral Dissertations

Metal halide perovskite solar cells (PSCs) have revolutionized the field of thin film photovoltaics. Within a decade, the power conversion efficiencies (PCEs) have increased at a phenomenal rate, rising from 3.8% to more than 25% in single-junction devices, moving them ahead of the current silicon-based technology. The high efficiencies of perovskite solar cells (PSCs) and their other unique properties arise from a combination of organic and inorganic components and electronic-ionic conduction, making them excellent candidates for a plethora of applications. However, PSCs face a significant—and ironic—roadblock to commercialization: these light-harvesting materials degrade under sunlight—the very condition they would need …

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Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari Dec 2021

Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari

Graduate Theses and Dissertations

Indium gallium nitride (InxGa1-xN) materials have held great potential for the optoelectronic industry due to their electrical and optical properties. The tunable band gap that can span the solar spectrum was one of the most significant features that attracted researchers’ attention. The band gap can be varied continuously from 0.77 eV for InN to 3.42 eV for GaN, covering the solar spectrum from near infrared to near ultraviolet. Additionally, it has a high absorption coefficient on the order of ∼105 cm−1, a direct band gap, high radiation resistance, thermal stability, and so on. Nevertheless, the epitaxial growth of high quality …

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Advanced Organic Polymers For The Nanoscale Fabrication Of Fiber-Based Electronics Using The Electrospinning Technique, William Serrano Garcia Jul 2021

Advanced Organic Polymers For The Nanoscale Fabrication Of Fiber-Based Electronics Using The Electrospinning Technique, William Serrano Garcia

USF Tampa Graduate Theses and Dissertations

Electrospinning has become one of the most interesting techniques for fabricating nanofibers for multiple applications. The high surface-to-volume ratio nanofibers offer make the perfect structure for filters, sensors, and fiber-based electronics that could lead to a wide range of flexible electronics applications. This technique makes organic semiconducting polymers a promising alternative for single fiber electronics structures. Indeed, a wide variety of structures can be fabricated using electrostatic techniques for polymer manipulation from droplets, fibers, and coaxial structures. Although techniques such as electrospinning led the use of electrostatic forces to generate fibers of a precursor solution, electrospinning requires large enough polymer …

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Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu Jun 2021

Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu

Master's Theses

The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …

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Effect Of Dopants On The Properties And Performance Of Gallium Oxide: Bulk Ceramics And Nanomaterials, Vishal Bhimrao Zade May 2021

Effect Of Dopants On The Properties And Performance Of Gallium Oxide: Bulk Ceramics And Nanomaterials, Vishal Bhimrao Zade

Open Access Theses & Dissertations

A comprehensive investigation performed in order to understand the fundamental aspects of transition metal (TM) incorporation into Ga2O3, a wide band gap semiconductor with a huge potential for application in electronics, optics, micromechanics and optoelectronics. An approach is presented to tailor the structural, optical, electrical, mechanical properties of Ga2O3 ceramics and thin films. The tungsten (W) mixed Ga2O3 with variable W at% (Ga2-2xWxO3 ; 0.00 ≤ x ≤ 0.30) were synthesized by the high temperature solid state route involving a 2-step calcination process. The solubility limits and phase stability of the compounds are established. While solubility and phase stability occur …

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Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu May 2021

Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu

Graduate Theses and Dissertations

Germanium-tin alloys with Sn compositions higher than 8 at. % to 10 at. % have recently attracted significant interest as a group IV semiconductor that is ideal for active photonics on a Si substrate. The interest is due to the fact that while at a few percent of Sn, GeSn is an indirect bandgap semiconductor, at about 8 to 10 at. % Sn, GeSn transitions to a direct bandgap semiconductor. This is at first surprising since the solid solubility of Sn in Ge under equilibrium growth conditions is limited to only about 1 at. %. However, under non-equilibrium growth conditions, …

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Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran May 2021

Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran

Graduate Theses and Dissertations

Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 μm, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 μm, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 μm, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 μm, and (5) very longwave IR extending beyond 12.0 μm. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic …

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Mitigation Of Electromigration In Metal Interconnects Passivated By Ångstrom-Thin 2d Materials, Yunjo Jeong Oct 2020

Mitigation Of Electromigration In Metal Interconnects Passivated By Ångstrom-Thin 2d Materials, Yunjo Jeong

USF Tampa Graduate Theses and Dissertations

Electromigration in metal interconnects remains one of the most prominent challenges in the state-of-the-art semiconductor industry. A phenomenon defined as the momentum transfer from electrons in an electric current to the metal atoms in a conductor, electromigration creates voids and hillocks that ultimately cause failures in nanoelectronics due to short or open circuits. Additionally, electromigration induces undesirable diffusion of metal atoms into the dielectric material, forcing the need for a barrier material that can mitigate such adverse effects of the phenomenon. However, extremely tight dimensional control of modern transistor designs imposes reduced dimensions of the interconnects in order to accommodate …

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Deposition And Characterization Of Indium Nitride And Aluminum Nitride Thin Films By Reactive Sputtering, Sushma Swaraj Atluri Apr 2020

Deposition And Characterization Of Indium Nitride And Aluminum Nitride Thin Films By Reactive Sputtering, Sushma Swaraj Atluri

Electrical & Computer Engineering Theses & Dissertations

Intensive research has been carried out on III-V semiconductors for over a century due to their various applications in the field of Microelectronics, Optics, and Photonics. Among III-V materials, the III-nitrides, for example Aluminum Nitride, Indium Nitride, Gallium Nitride and their ternary alloys are known for their unique properties. All the III-Nitride Compounds are direct bandgap semiconductors with a bandgap ranging from 0.7 eV to 6.2 eV covering the entire visible region and extending to the UV region as well. Despite having many applications, fabricating good quality thin films without defects is quite a challenge. They are typically grown using …

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Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis Feb 2020

Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis

Dissertations, Theses, and Capstone Projects

In this thesis, we discuss the growth procedure and the characterization results obtained for epitaxially grown submonolayer type-II quantum dot superlattices made of II-VI semiconductors. We have investigated the spin dynamics of ZnSe layers with embedded type-II ZnTe quantum dots and the use of (Zn)CdTe/ZnCdSe QDs for intermediate band solar cell (IBSC). Samples with a higher quantum dot density exhibit longer electron spin lifetimes, up to ~1 ns at low temperatures. Tellurium isoelectronic centers, which form in the ZnSe spacer regions as a result of the growth conditions, were also probed. A new growth sequence for type-II (Zn)CdTe/ZnCdSe (QDs) was …

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Tailoring The Grain Boundaries Of Wide-Bandgap Perovskite Solar Cells By Molecular Engineering, Khalid Emshadi Jan 2020

Tailoring The Grain Boundaries Of Wide-Bandgap Perovskite Solar Cells By Molecular Engineering, Khalid Emshadi

Electronic Theses and Dissertations

Due to the attraction of fabricating highly efficient tandem solar cells, wide-bandgap perovskite solar cells have attracted substantial interest in recent years. However, polycrystalline perovskite thin-films show the existence of trap states at grain boundaries, which diminish the optoelectronic properties of the perovskite and thus remains a challenge. This research demonstrates a one-step solution-processing of the [MA0.9Cs0.1Pb(I0.6Br0.4)3] wide-bandgap perovskite using Phenylhydrazine Iodide with amino groups to successfully passivate the trap density within grain boundaries and increase the perovskite grain size. The reinforced morphology and grain boundaries treatment considerably enhanced the photovoltaic performance …

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Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds Dec 2019

Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds

Materials Science and Engineering Faculty Publications and Presentations

Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we …

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Inas(111)A Homoepitaxy With Molecular Beam Epitaxy, Kevin D. Vallejo, Trent A. Garrett, Kathryn E. Sautter, Kevin Saythavy, Baolai Liang, Paul J. Simmonds Nov 2019

Inas(111)A Homoepitaxy With Molecular Beam Epitaxy, Kevin D. Vallejo, Trent A. Garrett, Kathryn E. Sautter, Kevin Saythavy, Baolai Liang, Paul J. Simmonds

Materials Science and Engineering Faculty Publications and Presentations

The authors have established a robust set of growth conditions for homoepitaxy of high-quality InAs with a (111)A crystallographic orientation by molecular beam epitaxy (MBE). By tuning the substrate temperature, the authors obtain a transition from a 2D island growth mode to step-flow growth. Optimized MBE parameters (substrate temperature = 500 °C, growth rate = 0.12ML/s, and V/III ratio ≥ 40) lead to the growth of extremely smooth InAs(111)A films, free from hillocks and other 3D surface imperfections. The authors see a correlation between InAs surface smoothness and optical quality, as measured by photoluminescence spectroscopy. This work establishes InAs(111)A as …

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First Principles Investigation Of Anomalous Pressure-Dependent Thermal Conductivity Of Chalcopyrites, Loay Flalfy, Denis Music, Ming Hu Oct 2019

First Principles Investigation Of Anomalous Pressure-Dependent Thermal Conductivity Of Chalcopyrites, Loay Flalfy, Denis Music, Ming Hu

Faculty Publications

The effect of compression on the thermal conductivity of CuGaS2, CuInS2, CuInTe2, and AgInTe2 chalcopyrites (space group I-42d) was studied at 300 K using phonon Boltzmann transport equation (BTE) calculations. The thermal conductivity was evaluated by solving the BTE with harmonic and third-order interatomic force constants. The thermal conductivity of CuGaS2 increases with pressure, which is a common behavior. Striking differences occur for the other three compounds. CuInTe2 and AgInTe2 exhibit a drop in the thermal conductivity upon increasing pressure, which is anomalous. AgInTe2 reaches a very low thermal conductivity of 0.2 W·m−1 ·K −1 at 2.6 GPa, being beneficial …

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Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip May 2019

Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip

Dissertations

Light-emitting diodes (LEDs) using III-nitride nanowire heterostructures have been intensively studied as promising candidates for future phosphor-free solid-state lighting and full-color displays. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-confined Stark effect due to the effective lateral stress relaxation, promising high efficiency full-color LEDs. Beside these advantages, however, several factors have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in …

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Investigation Of Electronic And Optical Properties Of 2-Dimensional Semiconductor Tin Selenide (Snse) Thin Films, Shakila Afrin Mar 2019

Investigation Of Electronic And Optical Properties Of 2-Dimensional Semiconductor Tin Selenide (Snse) Thin Films, Shakila Afrin

Dissertations and Theses

Over the last 5 decades, the semiconductor industry has been well served by Si based technology due to its abundant availability, lower manufacturing cost, large wafer sizes and less complexity in fabrication. Over this period, electronic devices and integrated systems have been miniaturized by downscaling of the transistors. The miniaturization has been guided by the Moore's law where the numbers of transistors have doubled over every two years. However, the trend of transistor miniaturization is fast approaching its limit. Hence, alternate and innovative solutions are necessary to tackle this problem and this propels the research for finding novel materials with …

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Roadmap On Biological Pathways For Electronic Nanofabrication And Materials, Reza M. Zadegan Mar 2019

Roadmap On Biological Pathways For Electronic Nanofabrication And Materials, Reza M. Zadegan

Materials Science and Engineering Faculty Publications and Presentations

Conventional microchip fabrication is energy and resource intensive. Thus, the discovery of new manufacturing approaches that reduce these expenditures would be highly beneficial to the semiconductor industry. In comparison, living systems construct complex nanometer-scale structures with high yields and low energy utilization. Combining the capabilities of living systems with synthetic DNA-/protein-based self-assembly may offer intriguing potential for revolutionizing the synthesis of complex sub-10 nm information processing architectures. The successful discovery of new biologically based paradigms would not only help extend the current semiconductor technology roadmap, but also offer additional potential growth areas in biology, medicine, agriculture and sustainability for the …

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Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras Jan 2019

Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras

Legacy Theses & Dissertations (2009 - 2024)

One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.

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Electron Transport In One And Two Dimensional Materials, Samuel William Lagasse Jan 2019

Electron Transport In One And Two Dimensional Materials, Samuel William Lagasse

Legacy Theses & Dissertations (2009 - 2024)

This dissertation presents theoretical and experimental studies in carbon nanotubes (CNTs), graphene, and van der Waals heterostructures. The first half of the dissertation focuses on cutting edge tight-binding-based quantum transport models which are used to study proton irradiation-induced single-event effects in carbon nanotubes [1], total ionizing dose effects in graphene [2], quantum hall effect in graded graphene p-n junctions [3], and ballistic electron focusing in graphene p-n junctions [4]. In each study, tight-binding models are developed, with heavy emphasis on tying to experimental data. Once benchmarked against experiment, properties of each system which are difficult to access in the laboratory, …

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Synthesis Of Cadmium Arsenide Semiconductor Nanoparticles, Superatomic Silver Clusters, And Silver Coordination Polymers, Sarthak Jashubhai Patel Jan 2019

Synthesis Of Cadmium Arsenide Semiconductor Nanoparticles, Superatomic Silver Clusters, And Silver Coordination Polymers, Sarthak Jashubhai Patel

Legacy Theses & Dissertations (2009 - 2024)

Nanomaterials have chemical, electronic, optical, and other properties distinct from their bulk counterparts. However, the atom-precise synthesis of these materials remains a challenge, leaving open many scientific questions regarding the size regime between nanoparticulate (quantum confined) and bulk character. In this work, efforts toward the synthesis of nanoparticulate and atom-precise metal and semimetal materials are described. The synthesis of II-V semiconductor Cd3As2 having a near-zero bandgap is discussed. Analysis by UV-Vis absorption spectroscopy and powder X-ray diffraction indicate the formation of material with unexpected crystallinity and absorption properties The interaction between the molecular source of As and the solvent was …

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A Simple And Robust Approach To Reducing Contact Resistance In Organic Transistors, Zachary A. Lamport, Katrina J. Barth, Hyunsu Lee, Eliot Gann, Sebastian Engmann, Hu Chen, Martin Guthold, Iain Mcculloch, John E. Anthony, Lee J. Richter, Dean M. Delongchamp, Oana D. Jurchescu Dec 2018

A Simple And Robust Approach To Reducing Contact Resistance In Organic Transistors, Zachary A. Lamport, Katrina J. Barth, Hyunsu Lee, Eliot Gann, Sebastian Engmann, Hu Chen, Martin Guthold, Iain Mcculloch, John E. Anthony, Lee J. Richter, Dean M. Delongchamp, Oana D. Jurchescu

Chemistry Faculty Publications

Efficient injection of charge carriers from the contacts into the semiconductor layer is crucial for achieving high-performance organic devices. The potential drop necessary to accomplish this process yields a resistance associated with the contacts, namely the contact resistance. A large contact resistance can limit the operation of devices and even lead to inaccuracies in the extraction of the device parameters. Here, we demonstrate a simple and efficient strategy for reducing the contact resistance in organic thin-film transistors by more than an order of magnitude by creating high work function domains at the surface of the injecting electrodes to promote channels …

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Proton Irradiation Effect On Thermoelectric Properties Of Nanostructured N-Type Half-Heusler Hf0.25Zr0.75Nisn0.99Sb0.01, Karthik Chinnathambi, Brian J. Jaques Jun 2018

Proton Irradiation Effect On Thermoelectric Properties Of Nanostructured N-Type Half-Heusler Hf0.25Zr0.75Nisn0.99Sb0.01, Karthik Chinnathambi, Brian J. Jaques

Materials Science and Engineering Faculty Publications and Presentations

Thermoelectric properties of nanostructured half-Heusler Hf0.25Zr0.75NiSn0.99Sb0.01 were characterized before and after 2.5 MeV proton irradiation. A unique high-sensitivity scanning thermal microprobe was used to simultaneously map the irradiation effect on thermal conductivity and Seebeck coefficient with spatial resolution less than 2 μm. The thermal conductivity profile along the depth from the irradiated surface shows excellent agreement with the irradiation-induced damage profile from simulation. The Seebeck coefficient was unaffected while both electrical and thermal conductivities decreased by 24%, resulting in no change in thermoelectric figure of merit ZT. Reductions in thermal and …

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Self-Assembly Of (111)-Oriented Tensile-Strained Quantum Dots By Molecular Beam Epitaxy, Christopher F. Schuck, Robin A. Mccown, Ashlie Hush, Austin Mello, Simon Roy, Joseph W. Spinuzzi, Paul J. Simmonds May 2018

Self-Assembly Of (111)-Oriented Tensile-Strained Quantum Dots By Molecular Beam Epitaxy, Christopher F. Schuck, Robin A. Mccown, Ashlie Hush, Austin Mello, Simon Roy, Joseph W. Spinuzzi, Paul J. Simmonds

Materials Science and Engineering Faculty Publications and Presentations

The authors report on a comprehensive study of the growth of coherently strained GaAs quantum dots (QDs) on (111) surfaces via the Stranski–Krastanov (SK) self-assembly mechanism. Recent reports indicate that the long-standing challenges, whereby the SK growth mechanism could not be used to synthesize QDs on (111) surfaces, or QDs under tensile strain, have been overcome. However, a systematic study of the SK growth of (111)-oriented, tensile-strained QDs (TSQDs) as a function of molecular beam epitaxy growth parameters is still needed. Here, the authors explore the effects of deposition amount, substrate temperature, growth rate, and V/III flux ratio on the …

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Nonlinear Coupled Effects In Nanomaterials, Sia Bhowmick Jan 2018

Nonlinear Coupled Effects In Nanomaterials, Sia Bhowmick

Theses and Dissertations (Comprehensive)

Materials at the nanoscale have different chemical, structural, and optoelectrical properties compared to their bulk counterparts. As a result, such materials, called nanomaterials, exhibit observable differences in certain physical phenomena. One such resulting phenomenon called the piezoelectric effect has played a crucial role in miniature self-powering electronic devices called nanogenerators which are fabricated by using nanostructures, such as nanowires, nanorods, and nanofilms. These devices are capable of harvesting electrical energy by inducing mechanical strain on the individual nanostructures. Electrical energy created in this manner does not have environmental limitations. In this thesis, important coupled effects, such as the nonlinear piezoelectric …

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