Open Access. Powered by Scholars. Published by Universities.®
- Discipline
Articles 1 - 2 of 2
Full-Text Articles in Engineering
Energy Transfer In Cdse Nanoplatelet Superlattices, Kelly Wang, Jordan Snaider, Libai Huang
Energy Transfer In Cdse Nanoplatelet Superlattices, Kelly Wang, Jordan Snaider, Libai Huang
The Summer Undergraduate Research Fellowship (SURF) Symposium
Two-dimension CdSe semiconductor nanoplatelets (NPLs) exhibit unique, highly desirable optical and electronic properties, such as large absorption crossection and bright emission. Fӧrster resonance energy transfer (FRET) between NPLs is responsible for the utility of these NPLs in fields such as lasing, lighting, solar energy, and sensing. Here we study energy transfer processes in NPL superlattices using photoluminescence (PL) and time resolved PL (TRPL) spectroscopic methods. Information on the effect of thickness of NPL is obtained through correlating PL and TRPL spectra of CdSe superlattices with AFM measurements. PL spectrum showed narrow fluorescence and absorption peaks at room temperature corresponding to …
The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim
The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim
Undergraduate Research Opportunities Program (UROP)
Gallium nitride (GaN) is a group-III nitride semiconductor; which may prove useful in developing optical instruments that operate under high ambient pressures. The purpose of this project is to examine the properties of GaN under varying conditions. The methods used in this experiment consist of modeling free energy as a function of lattice constants; calculating bond lengths, bond strengths, and bulk moduli; and comparing the resultant data with values in published literature. We will also compare these results with experimental data drawn from x-ray diffraction scans. By doing so, we hope to determine whether gallium nitride is suitable for use …