Engineering Commons^™

Characterization Of Highly Doped N-Type And P-Type Silicon Carbide Ohmic Contacts, Tanner Rice

Graduate Theses and Dissertations

Silicon Carbide (SiC) is a rather new material that possesses unparalleled properties when compared to Silicon. Due to its larger band gap alongside other thermal properties, SiC can survive in hotter, more radiation intensive environments, whether that be within the crust of the earth or in the reaches of space. As a desirable semiconductor for these applications, CMOS is an especially important device due to its low power consumption. However, creating a good contact between the metal and semiconductor optimally requires two different metals for the n -type and the p-type semiconductor. This greatly increases the processing time, as separate …

Quantitative, Photocurrent Multidimensional Coherent Spectroscopy, Adam Halaoui

Electronic Theses and Dissertations

Multidimensional coherent spectroscopy (MDCS) is a quickly growing field that has a lot of advantages over more conventional forms of spectroscopy. These advantages all come from the fact that MDCS allows us to get time resolved correlated emission and absorption spectra using very precisely chosen interactions between the density matrix and the excitation laser. MDCS spectra gives the researcher a lot of information that can be extracted purely through qualitative analysis. This is possible because state couplings are entirely separated on the spectra, and once we know how to read the data, we can see how carriers transport in the …

Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers

Physics Undergraduate Honors Theses

Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …

Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi

Graduate Theses and Dissertations

This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …

High-Throughput Computation Of Interfacial Thermal Management Of Wide-Bandgap Semiconductors, Hao-Wen Chen

Theses and Dissertations

As semiconductor electronics, in particular high electron mobility transistors, get hot in operation, people are trying to incorporate different semiconductor materials to solve the problem of heat dissipation to maintain the device efficiency and performance. In this master thesis, two different packages, LAMMPS and almaBTE, that are focusing on micro-scale and atomic scale respectively, are used to simulate the heat transfer process across interfaces in two different scales. In the LAMMPS simulation, the research is exploring how the location of atoms and the thickness of interfacial layers will influence the interfacial thermal conductance. On the other hand, using the almaBTE …

Tailoring Interfaces And Composition For Stable And Efficient Perovskite Solar Cells, Hamza Javaid

Doctoral Dissertations

Metal halide perovskite solar cells (PSCs) have revolutionized the field of thin film photovoltaics. Within a decade, the power conversion efficiencies (PCEs) have increased at a phenomenal rate, rising from 3.8% to more than 25% in single-junction devices, moving them ahead of the current silicon-based technology. The high efficiencies of perovskite solar cells (PSCs) and their other unique properties arise from a combination of organic and inorganic components and electronic-ionic conduction, making them excellent candidates for a plethora of applications. However, PSCs face a significant—and ironic—roadblock to commercialization: these light-harvesting materials degrade under sunlight—the very condition they would need …

Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari

Graduate Theses and Dissertations

Indium gallium nitride (InxGa1-xN) materials have held great potential for the optoelectronic industry due to their electrical and optical properties. The tunable band gap that can span the solar spectrum was one of the most significant features that attracted researchers’ attention. The band gap can be varied continuously from 0.77 eV for InN to 3.42 eV for GaN, covering the solar spectrum from near infrared to near ultraviolet. Additionally, it has a high absorption coefficient on the order of ∼105 cm−1, a direct band gap, high radiation resistance, thermal stability, and so on. Nevertheless, the epitaxial growth of high quality …

Advanced Organic Polymers For The Nanoscale Fabrication Of Fiber-Based Electronics Using The Electrospinning Technique, William Serrano Garcia

USF Tampa Graduate Theses and Dissertations

Electrospinning has become one of the most interesting techniques for fabricating nanofibers for multiple applications. The high surface-to-volume ratio nanofibers offer make the perfect structure for filters, sensors, and fiber-based electronics that could lead to a wide range of flexible electronics applications. This technique makes organic semiconducting polymers a promising alternative for single fiber electronics structures. Indeed, a wide variety of structures can be fabricated using electrostatic techniques for polymer manipulation from droplets, fibers, and coaxial structures. Although techniques such as electrospinning led the use of electrostatic forces to generate fibers of a precursor solution, electrospinning requires large enough polymer …

Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu

Master's Theses

The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …

Effect Of Dopants On The Properties And Performance Of Gallium Oxide: Bulk Ceramics And Nanomaterials, Vishal Bhimrao Zade

Open Access Theses & Dissertations

A comprehensive investigation performed in order to understand the fundamental aspects of transition metal (TM) incorporation into Ga2O3, a wide band gap semiconductor with a huge potential for application in electronics, optics, micromechanics and optoelectronics. An approach is presented to tailor the structural, optical, electrical, mechanical properties of Ga2O3 ceramics and thin films. The tungsten (W) mixed Ga2O3 with variable W at% (Ga2-2xWxO3 ; 0.00 ≤ x ≤ 0.30) were synthesized by the high temperature solid state route involving a 2-step calcination process. The solubility limits and phase stability of the compounds are established. While solubility and phase stability occur …

Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu

Graduate Theses and Dissertations

Germanium-tin alloys with Sn compositions higher than 8 at. % to 10 at. % have recently attracted significant interest as a group IV semiconductor that is ideal for active photonics on a Si substrate. The interest is due to the fact that while at a few percent of Sn, GeSn is an indirect bandgap semiconductor, at about 8 to 10 at. % Sn, GeSn transitions to a direct bandgap semiconductor. This is at first surprising since the solid solubility of Sn in Ge under equilibrium growth conditions is limited to only about 1 at. %. However, under non-equilibrium growth conditions, …

Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran

Graduate Theses and Dissertations

Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 μm, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 μm, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 μm, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 μm, and (5) very longwave IR extending beyond 12.0 μm. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic …

Mitigation Of Electromigration In Metal Interconnects Passivated By Ångstrom-Thin 2d Materials, Yunjo Jeong

USF Tampa Graduate Theses and Dissertations

Electromigration in metal interconnects remains one of the most prominent challenges in the state-of-the-art semiconductor industry. A phenomenon defined as the momentum transfer from electrons in an electric current to the metal atoms in a conductor, electromigration creates voids and hillocks that ultimately cause failures in nanoelectronics due to short or open circuits. Additionally, electromigration induces undesirable diffusion of metal atoms into the dielectric material, forcing the need for a barrier material that can mitigate such adverse effects of the phenomenon. However, extremely tight dimensional control of modern transistor designs imposes reduced dimensions of the interconnects in order to accommodate …

Deposition And Characterization Of Indium Nitride And Aluminum Nitride Thin Films By Reactive Sputtering, Sushma Swaraj Atluri

Electrical & Computer Engineering Theses & Dissertations

Intensive research has been carried out on III-V semiconductors for over a century due to their various applications in the field of Microelectronics, Optics, and Photonics. Among III-V materials, the III-nitrides, for example Aluminum Nitride, Indium Nitride, Gallium Nitride and their ternary alloys are known for their unique properties. All the III-Nitride Compounds are direct bandgap semiconductors with a bandgap ranging from 0.7 eV to 6.2 eV covering the entire visible region and extending to the UV region as well. Despite having many applications, fabricating good quality thin films without defects is quite a challenge. They are typically grown using …

Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis

Dissertations, Theses, and Capstone Projects

In this thesis, we discuss the growth procedure and the characterization results obtained for epitaxially grown submonolayer type-II quantum dot superlattices made of II-VI semiconductors. We have investigated the spin dynamics of ZnSe layers with embedded type-II ZnTe quantum dots and the use of (Zn)CdTe/ZnCdSe QDs for intermediate band solar cell (IBSC). Samples with a higher quantum dot density exhibit longer electron spin lifetimes, up to ~1 ns at low temperatures. Tellurium isoelectronic centers, which form in the ZnSe spacer regions as a result of the growth conditions, were also probed. A new growth sequence for type-II (Zn)CdTe/ZnCdSe (QDs) was …

Tailoring The Grain Boundaries Of Wide-Bandgap Perovskite Solar Cells By Molecular Engineering, Khalid Emshadi

Electronic Theses and Dissertations

Due to the attraction of fabricating highly efficient tandem solar cells, wide-bandgap perovskite solar cells have attracted substantial interest in recent years. However, polycrystalline perovskite thin-films show the existence of trap states at grain boundaries, which diminish the optoelectronic properties of the perovskite and thus remains a challenge. This research demonstrates a one-step solution-processing of the [MA_0.9Cs_0.1Pb(I_0.6Br_0.4)3] wide-bandgap perovskite using Phenylhydrazine Iodide with amino groups to successfully passivate the trap density within grain boundaries and increase the perovskite grain size. The reinforced morphology and grain boundaries treatment considerably enhanced the photovoltaic performance …

Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip

Dissertations

Light-emitting diodes (LEDs) using III-nitride nanowire heterostructures have been intensively studied as promising candidates for future phosphor-free solid-state lighting and full-color displays. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-confined Stark effect due to the effective lateral stress relaxation, promising high efficiency full-color LEDs. Beside these advantages, however, several factors have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in …

Investigation Of Electronic And Optical Properties Of 2-Dimensional Semiconductor Tin Selenide (Snse) Thin Films, Shakila Afrin

Dissertations and Theses

Over the last 5 decades, the semiconductor industry has been well served by Si based technology due to its abundant availability, lower manufacturing cost, large wafer sizes and less complexity in fabrication. Over this period, electronic devices and integrated systems have been miniaturized by downscaling of the transistors. The miniaturization has been guided by the Moore's law where the numbers of transistors have doubled over every two years. However, the trend of transistor miniaturization is fast approaching its limit. Hence, alternate and innovative solutions are necessary to tackle this problem and this propels the research for finding novel materials with …

Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras

Legacy Theses & Dissertations (2009 - 2024)

One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.

Electron Transport In One And Two Dimensional Materials, Samuel William Lagasse

Legacy Theses & Dissertations (2009 - 2024)

This dissertation presents theoretical and experimental studies in carbon nanotubes (CNTs), graphene, and van der Waals heterostructures. The first half of the dissertation focuses on cutting edge tight-binding-based quantum transport models which are used to study proton irradiation-induced single-event effects in carbon nanotubes [1], total ionizing dose effects in graphene [2], quantum hall effect in graded graphene p-n junctions [3], and ballistic electron focusing in graphene p-n junctions [4]. In each study, tight-binding models are developed, with heavy emphasis on tying to experimental data. Once benchmarked against experiment, properties of each system which are difficult to access in the laboratory, …

Synthesis Of Cadmium Arsenide Semiconductor Nanoparticles, Superatomic Silver Clusters, And Silver Coordination Polymers, Sarthak Jashubhai Patel

Legacy Theses & Dissertations (2009 - 2024)

Nanomaterials have chemical, electronic, optical, and other properties distinct from their bulk counterparts. However, the atom-precise synthesis of these materials remains a challenge, leaving open many scientific questions regarding the size regime between nanoparticulate (quantum confined) and bulk character. In this work, efforts toward the synthesis of nanoparticulate and atom-precise metal and semimetal materials are described. The synthesis of II-V semiconductor Cd3As2 having a near-zero bandgap is discussed. Analysis by UV-Vis absorption spectroscopy and powder X-ray diffraction indicate the formation of material with unexpected crystallinity and absorption properties The interaction between the molecular source of As and the solvent was …

Nonlinear Coupled Effects In Nanomaterials, Sia Bhowmick

Theses and Dissertations (Comprehensive)

Materials at the nanoscale have different chemical, structural, and optoelectrical properties compared to their bulk counterparts. As a result, such materials, called nanomaterials, exhibit observable differences in certain physical phenomena. One such resulting phenomenon called the piezoelectric effect has played a crucial role in miniature self-powering electronic devices called nanogenerators which are fabricated by using nanostructures, such as nanowires, nanorods, and nanofilms. These devices are capable of harvesting electrical energy by inducing mechanical strain on the individual nanostructures. Electrical energy created in this manner does not have environmental limitations. In this thesis, important coupled effects, such as the nonlinear piezoelectric …

Generalizable Modeling Of Charge Transport In Single Electron Transistor Devices: Application To Thermal Sensitivity In Semiconducting Island Systems, Paniz Khanmohammadi Hazaveh

Dissertations, Master's Theses and Master's Reports

Electronic devices, especially MOSFETs, have been dimensionally scaled down to enhance operation of integrated circuits, addressing challenges such as current leakage, fluctuation of intrinsic semiconductor properties, and power dissipation. Reaching dimensions below 20 nm, there are fundamental limitations that are difficult to overcome, driving alternative device paradigms to be sought utilizing the quantum mechanical behavior of electrons. Single electron transistor (SET) devices are examples of a new generation of low-power transistors designed to transport information via single electron tunneling through one or more islands separated by tunnel junctions. Experimentally explored SET devices have shown that there are advantages to using …

Progress Towards Competitive Iii-V Infrared Detectors: Fundamental Material Characterization And Techniques, Emil A. Kadlec

Electrical and Computer Engineering ETDs

Measurement of recombination mechanisms provides critical feedback on the material quality of semiconductors. Strained layer type-II superlattices (T2SLs) have seen a recent increase in interest as they possess intriguing properties making them prime candidates for use as infrared detectors. As T2SL-based detectors approach the performance of industry-standard Hg_1-xCd_xTe photodetectors, measurement of the carrier lifetime is becoming increasingly important. A comparison of the lifetime measurement techniques time-resolved photoluminescence, frequency-modulated photoluminescence, time-resolved microwave reflectance, and frequency-modulated conductance is made. Although photoluminescence-based measurement techniques are more common in literature, it is shown that the microwave reflectance-based measurement technique is …

The Impact Of Quantum Size Effects On Thermoelectric Performance In Semiconductor Nanostructures, Adithya Kommini

Masters Theses

An increasing need for effective thermal sensors, together with dwindling energy resources, have created renewed interests in thermoelectric (TE), or solid-state, energy conversion and refrigeration using semiconductor-based nanostructures. Effective control of electron and phonon transport due to confinement, interface, and quantum effects has made nanostructures a good way to achieve more efficient thermoelectric energy conversion. This thesis studies the two well-known approaches: confinement and energy filtering, and implements improvements to achieve higher thermoelectric performance. The effect of confinement is evaluated using a 2D material with a gate and utilizing the features in the density of states. In addition to that, …

Electrical, Electronic And Optical Properties Of Mose2 And Wse2, Sushant Shashikant Rassay

Theses

Transition-metal dichalcogenides (TMDC) crystals have emerged as a new class of semiconductors that display distinctive properties at monolayer thickness. Their electrical, electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Monolayer MoSe₂ and WSe₂ have an intrinsic band-gap in the visible region of the solar spectrum (400nm - 700nm) which makes them distinct from other 2-D materials like graphene.

In this study, the electrical, electronic and optical properties of monolayer and bulk MoSe₂ and WSe₂ are studied. The electronic band structures are presented for …

Nanostructured Organic/Inorganic Semicondutor Photovoltaics: Investigation On Morphology And Optoelectronics Performance, Aruna Wanninayake

Theses and Dissertations

Organic solar cell is a promising technology because of the versatility of organic materials in terms of tunability of their electrical and optical properties. In addition, their relative insensitivity to film imperfections potentially allows for very low-cost high-throughput roll-to-roll processing. However, the power conversion efficiency of organic solar cell is still limited and needs to be improved in order to be competitive with grid parity. This work is focused on the design and characterization of a new organic/inorganic hybrid device to enhance the efficiency factors of bilayer organic solar cells such as: light absorption, exciton diffusion, exciton dissociation, charge transportation …

Zncdmgse As A Materials Platform For Advanced Photonic Devices: Broadband Quantum Cascade Detectors And Green Semiconductor Disk Lasers, Joel De Jesus

Dissertations, Theses, and Capstone Projects

The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for …

Structural, Dielectric, And Ferroelectric Characterization Of Lead-Free Calcium-Cerium Co-Doped Batio3 Ceramics, Juan Alberto Duran

Open Access Theses & Dissertations

Structure, morphology, and regulation of the dielectric properties via close-composition intervals is demonstrated for variable-cerium, constant-calcium co-doped barium titanate (Ba0.80Ca0.20CeyTi1-yO3; y=0.0-0.25; referred to BCCT). The effect of variable Ce-content on the structure and dielectric properties of BCCT is investigated. X-ray diffraction spectra confirms the studied samples are mainly in BT tetragonal phase with a small secondary phase detected as CaTiO3 in BCCT for y = 0.20 and 0.25. However, the lattice parameter reduction was evident with increasing Ce-content. Composition-driven dielectric constant leap (4,000-5,500) was observed from intrinsic BCT to BCCT for (y = 0.0-0.04). The temperature dependent dielectric constant showed …

Investigation Of Contact Properties At Metal Graphene Junctions, Their Degradation And Intrinsic Limitations, Zhenjun Zhang

Legacy Theses & Dissertations (2009 - 2024)

Graphene is a two-dimensional material, comprised of a monolayer of carbon in a hexagonal lattice. Since 2004, the most promising applications of this material are high frequency devices (such as mixers and power amplifiers), as well as flexible and transparent electronics. However, these applications can’t be realized without a proper contact metal. With more understanding of the contact properties, the range of prospects for graphene’s applications can be better defined.