Engineering Commons^™

Incorporation Of Zinc In Pre-Alloyed Cuin[Zn]S2/Zns Quantum Dots, Jean Carlos Morales Orocu

Graduate Theses and Dissertations

Since the early 2000s heavy-metal-free quantum dots (QDs) such as CuInS2/ZnS have attempted to replace CdSe, their heavy-metal-containing counterparts. CuInS2/ZnS is synthesized in a two-step process that involves the fabrication of CuInS2 (CIS) nanocrystals (NCs) followed by the addition of zinc precursors. Instead of the usual core/shell architecture often exhibited by binary QDs, coating CIS QDs results in alloyed and/or partially alloyed cation-exchange (CATEX) QDs. The effect that zinc has on the properties of CIS NCs was studied by incorporating zinc during the first step of the synthesis. Different In:Cu:Zn ratios were employed in this study, maintaining a constant 4:1 …

Radiation Effects On Lithium Indium Diselenide Semiconductors As Neutron Imaging Detectors, Robert M. Golduber

Masters Theses

The studies presented in this work aim to improve upon the knowledge base of lithium indium diselenide (LISe) semiconductors to understand how the material behaves in high radiation environments and refine the process of turning it into a neutron detector. LISe has great potential as neutron imaging detector because of the high neutron absorption efficiency of its enriched ⁶Li component and its ability to discriminate between gamma-rays and neutrons. Its ability to remain functional after being irradiated with large amounts of neutron fluence has been tested and the change in its electro-optical properties with relation to fluence has been …

High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan

Graduate Theses and Dissertations

Power modules based on wide bandgap (WBG) materials enhance reliability and considerably reduce cooling requirements that lead to a significant reduction in total system cost and weight. Although these innovative properties lead power modules to higher power density, some concerns still need to be addressed to take full advantage of WBG-based modules. For example, the use of bulky transformers as a galvanic isolation system to float the high voltage gate driver limits further size reduction of the high-temperature power modules. Bulky transformers can be replaced by integrating high-temperature optocouplers to scale down power modules further and achieve disrupting performance in …

Thermal Transport Modeling Of Semiconductor Materials From First Principles, Aliya Qureshi

Masters Theses

Over the past few years, the size of semiconductor devices has been shrinking whereas the density of transistors has exponentially increased. Thus, thermal management has become a serious concern as device performance and reliability is greatly affected by heat. An understanding of thermal transport properties at device level along with predictive modelling can lead us to design of new systems and materials tailored according to the thermal conductivity. In our work we first review different models used to calculate thermal conductivity and examine their accuracy using the experimentally measured thermal conductivity for Si. Our results suggest that empirically calculated rates …

Triple-Junction Solar Cells : In Parallel., Levi C Mays

Electronic Theses and Dissertations

This paper looks into the current inefficiency of solar cells and attempts a few alternative solar cell structures in order to provide a more effective source of renewable energy. Currently, multi-junction solar cells are being developed to capture the sun’s light more efficiently. One of the ideas in this paper is to add a window to see if the addition of such a layer into a junction will increase the voltage while maintaining nearly the same current output. Central to this paper is the rearranging of the conducting layers of the multi-junction cell so that the junctions can be connected …

(111)-Oriented Gallium Arsenide Tensile-Strained Quantum Dots Tailored For Entangled Photon Emission, Christopher Schuck

Boise State University Theses and Dissertations

The use of molecular beam epitaxy (MBE) to create quantum dots (QDs) embedded in solid-state semiconductor media has been at the forefront of novel and record-breaking optoelectronic device development for many years. However, the wide range of semiconductor fabrication capabilities and the non-equilibrium growth parameters inherent to MBE mean that there are still many QD research frontiers that are yet to be explored.

This work focuses on a recently discovered method that permits, for the first time, the growth of QDs under tensile strain on non-(100) surfaces. My research explores the first (and currently only) optically active materials system for …

Characterization Of Metal Contacts On Hydrothermally Synthesized Uranium Dioxide For Novel Semiconductor Applications, Tory E. Robinson

Theses and Dissertations

This research is focused on determining which metals or combinations of metals form effective electrical contacts on hydrothermally synthesized UO2 substrates to allow for additional work in characterization of the material as well as the feasibility of its use in semiconductor devices such as solid-state neutron detectors. A methodology was established for selection of candidate metals. Target mixtures composed of Au, Ag, Pt, and Mg were chosen along with several single-metals. Thin metal films were deposited onto tungsten probe tips and hydrothermally synthesized UO2 samples to allow for analysis of mechanical and deposited contact to the substrates through I-V measurements.

Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li

Graduate Theses and Dissertations

Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and super lattices (SLs) are expected to be promising alternatives to random InGaN alloys since in principle they can achieve the equivalent band gap of InGaN random alloys with arbitrarily high In-content and at the same time bypass many growth difficulties.

This dissertation focuses on studying the growth mechanisms, structural properties and energy structures of InN/GaN …

Plasmonic Devices Based On Transparent Conducting Oxides For Near Infrared Applications, Kim Jongbum

Open Access Dissertations

In the past decade, there have been many breakthroughs in the field of plasmonics and nanophotonics that have enabled optical devices with unprecedented functionalities. Even though remarkable demonstration of at photonic devices has been reported, constituent materials are limited to the noble metals such as gold (Au) and silver (Ag) due to their abundance of free electrons which enable the support of plasmon resonances in the visible range. With the strong demand for extension of the optical range of plasmonic applications, it is now a necessity to explore and develop alternative materials which can overcome intrinsic issues of noble metals …

Synthesis, Characterization, And Electronic Properties Of Novel 2d Materials : Transition Metal Dichalcogenides And Phosphorene., George Anderson

Electronic Theses and Dissertations

Scaling electronic devices has become paramount. The current work builds upon scaling efforts by developing novel synthesis methods and next generation sensing devices based on 2D materials. A new combination method utilizing thermal evaporation and chemical vapor deposition was developed and analyzed to show the possibilities of Transition Metal Dichalcogenide monolayers and heterostructures. The materials produced from the above process showed high degrees of compositional control in both spatial dimensions and chemical structure. Characterization shows controlled fabrication of heterostructures, which may pave the way for future band gap engineering possibilities. In addition, Phosphorene based field effect transistors, photodetectors, and gas …

Mechanical And Electro-Mechanical Properties Of Crystalline Organic Semiconductors, Marcos A. Reyes-Martinez

Doctoral Dissertations

The study of the physical properties of organic crystalline semiconductors has allowed the advent of a new generation of high-performance organic electronic devices. Exceptional charge-transport properties and recent developments in large-area patterning techniques make organic single crystals (OSCs) excellent candidates for their utilization in the next-generation of electronic technologies, including flexible and conformable organic thin-film devices. In spite of the profound knowledge of the structural and electrical properties of OSCs, knowledge of the mechanical properties and the effects of mechanical strain is almost non-existent. This dissertation aims to bring new understanding of the intrinsic mechanical properties and the effect of …

Constructing And Optimizing A Single Wafer Solar Cell Array In The Microfabrication Lab At California Polytechnic State University At San Luis Obispo, Rod Marstell

Master's Theses

CONSTRUCTING AND OPTIMIZING A SINGLE WAFER SOLAR CELL ARRAY IN THE MICROFABRICATION LAB AT CALIFORNIA POLYTECHNIC STATE UNIVERSITY AT SAN LUIS OBISPO

Solar cells are more and more becoming a significant source of energy in the world today. They are used to power entire buildings as well as small devices and everything in between, and are utilized all around the world. Smaller solar devices, such as hearing aid battery chargers, cost a lot of money relative to the monetary wealth in third-world countries. For this purpose, a less expensive, more efficient solar cell array should be developed.

This study contains …

New Application For Indium Gallium Zinc Oxide Thin Film Transistors: A Fully Integrated Active Matrix Electrowetting Microfluidic Platform, Jiyong Noh

Doctoral Dissertations

The characterization and fabrication of active matrix TFTs [Thin Film Transistors] have been studied for applying an addressable microfluidic electrowetting channel device. The a-IGZO [Amorphous Indium Gallium Zinc Oxide] is used for electronic switching device to control the microfluidic device because of its high mobility, transparency, and easy to fabrication. The purpose of this dissertation is to optimize each IGZO TFT process including the optimization of a-IGZO properties to achieve robust device for application. To drive the IGZO TFTs, the channel resistance of IGZO layer and contact resistance between IGZO layer and source/drain (S/D) electrode are discussed in this dissertation. …

Fabrication And Characterization Of Si(1-X)Ge(X) Semiconductor Alloy For Sensor Applications, Daniel Aaron Schaeffer

Masters Theses

Si_1-xGe_x [Si(1-x)Ge(x)] semiconductor alloys have emerged as materials with many important applications in the electronic industry due to its tunable electronic, optical, and physical properties. It has been studied and analyzed for the fabrication of high-speed micro electronics (e.g., SiGe heterojunction bipolar transistors (HBT) and high electron mobility field effect transistors) and thermo-photovoltaics (e.g., photodetectors, solar cells, thermoelectric power generators and temperature sensors). Other applications of Si_1-xGe_x include tunable neutron and x-ray monochromators and γ- ray [gamma-ray] detectors. In these applications, the Si_1-xGe_x alloy is generally used in the form of …

Carbon Nitride And Conjugated Polymer Composite Materials, Josh Byers

Electronic Thesis and Dissertation Repository

The semiconductor and photovoltaic properties of carbon nitride (CNx) thin films prepared using a reactive magnetron sputtering technique were investigated both individually and as composites with the organic conjugated polymers polybithiophene (PBT) and poly(3-hextlthiophene) (P3HT). At low nitrogen content, the film structure was dominated by graphitic sp² percolation networks, whereas at higher nitrogen contents CNx films started to demonstrate semiconductor properties, as evidenced by the occurrence of photoconductivity and the development of a space charge region. When CNx was deposited onto a PBT substrate, it was found to function as an acceptor material improving the photocurrent generation both in …

Creating A Solar Cell Array From A Single Silicon Wafer, Samyukta Gade, Roderick Marstell

Materials Engineering

Two different processes to create multi-celled solar panels from single wafers were made and implemented. To do this, the cells must not have a common ground, and both designs use different approaches to solve this problem. One utilizes a 2.9 µm deep n-type well within a 10.74 µm deep p-type well in an n-type wafer. There are two cells in series, which has a theoretical voltage of 1 V. The cells are connected in series with 1.9 µm thick gold traces. Any area that the gold is not in contact with the silicon has a .5 µm layer silicon dioxide …

The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride

Master's Theses

Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and drift during …

Electrical Properties Of Ultra Thin Al2o3 And Hfo2 Films As Gate Dielectrics In Mos Technology, Vishal R. Mehta

Theses

The rapidly evolving silicon industry demands devices with high-speed and low power consumption. This has led to aggressive scaling of the dimensions in metal oxide semiconductor field effect transistors (MOSFETs). The channel length has been reduced as a result of this scaling. The industry favorite, SlO₂, has reached limitations in the thickness regime of 1-1.5 nm as a gate dielectric. High-_κ gate dielectrics such as Al₂0₃ and HfO₂ and their silicates are some of the materials that may, probably, replace SlO₂, as gate dielectric in the next four to five years. …