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Full-Text Articles in Engineering
Radiation Effects On Lithium Indium Diselenide Semiconductors As Neutron Imaging Detectors, Robert M. Golduber
Radiation Effects On Lithium Indium Diselenide Semiconductors As Neutron Imaging Detectors, Robert M. Golduber
Masters Theses
The studies presented in this work aim to improve upon the knowledge base of lithium indium diselenide (LISe) semiconductors to understand how the material behaves in high radiation environments and refine the process of turning it into a neutron detector. LISe has great potential as neutron imaging detector because of the high neutron absorption efficiency of its enriched 6Li component and its ability to discriminate between gamma-rays and neutrons. Its ability to remain functional after being irradiated with large amounts of neutron fluence has been tested and the change in its electro-optical properties with relation to fluence has been …
New Application For Indium Gallium Zinc Oxide Thin Film Transistors: A Fully Integrated Active Matrix Electrowetting Microfluidic Platform, Jiyong Noh
Doctoral Dissertations
The characterization and fabrication of active matrix TFTs [Thin Film Transistors] have been studied for applying an addressable microfluidic electrowetting channel device. The a-IGZO [Amorphous Indium Gallium Zinc Oxide] is used for electronic switching device to control the microfluidic device because of its high mobility, transparency, and easy to fabrication. The purpose of this dissertation is to optimize each IGZO TFT process including the optimization of a-IGZO properties to achieve robust device for application. To drive the IGZO TFTs, the channel resistance of IGZO layer and contact resistance between IGZO layer and source/drain (S/D) electrode are discussed in this dissertation. …
Fabrication And Characterization Of Si(1-X)Ge(X) Semiconductor Alloy For Sensor Applications, Daniel Aaron Schaeffer
Fabrication And Characterization Of Si(1-X)Ge(X) Semiconductor Alloy For Sensor Applications, Daniel Aaron Schaeffer
Masters Theses
Si1-xGex [Si(1-x)Ge(x)] semiconductor alloys have emerged as materials with many important applications in the electronic industry due to its tunable electronic, optical, and physical properties. It has been studied and analyzed for the fabrication of high-speed micro electronics (e.g., SiGe heterojunction bipolar transistors (HBT) and high electron mobility field effect transistors) and thermo-photovoltaics (e.g., photodetectors, solar cells, thermoelectric power generators and temperature sensors). Other applications of Si1-xGex include tunable neutron and x-ray monochromators and γ- ray [gamma-ray] detectors. In these applications, the Si1-xGex alloy is generally used in the form of …