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Electrical Properties Of Ultra Thin Al2o3 And Hfo2 Films As Gate Dielectrics In Mos Technology, Vishal R. Mehta

Theses

The rapidly evolving silicon industry demands devices with high-speed and low power consumption. This has led to aggressive scaling of the dimensions in metal oxide semiconductor field effect transistors (MOSFETs). The channel length has been reduced as a result of this scaling. The industry favorite, SlO₂, has reached limitations in the thickness regime of 1-1.5 nm as a gate dielectric. High-_κ gate dielectrics such as Al₂0₃ and HfO₂ and their silicates are some of the materials that may, probably, replace SlO₂, as gate dielectric in the next four to five years. …