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- Nanostructured materials (8)
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Articles 1 - 30 of 33
Full-Text Articles in Engineering
Domain Aware Deep Learning For Wireless Physical Layer, Shuvam Chakraborty
Domain Aware Deep Learning For Wireless Physical Layer, Shuvam Chakraborty
Legacy Theses & Dissertations (2009 - 2024)
Wireless receiver design for OFDM systems is well investigated with classical signal processing tools, which lack the capacity to extract intrinsic channel effects in received signal and lead to high decoding error in receiver. Current deep learning techniques have shown improvement in such cases. But these models are mostly being developed as black box without any anchor to the theory of wireless signal propagation, which leads to surface level information gain and lacks generalizability. We propose deep learning models where the hyperparameters and learning objectives are derived from domain knowledge of wireless signal propagation. These models not only increase the …
Augmented Communications : A Solution For Overcoming High Spatial Correlation Of The Massive-Miso Vlc Channel, Monette Khadr
Augmented Communications : A Solution For Overcoming High Spatial Correlation Of The Massive-Miso Vlc Channel, Monette Khadr
Legacy Theses & Dissertations (2009 - 2024)
A key challenge for future wireless networks is to come upon a riveting compromise between spectral efficiency, complexity, and energy efficiency. The challenge is also intensified due to the pace at which the Internet-of-Things (IoT) technology is arriving, causing an upheaval to pre-existing network infrastructures in terms of elevating spectrum scarcity. To keep pace with the exploding data demand forecasts, a circumvention is required. One realization is by utilizing the high-band spectrum and the rich body of knowledge on multiple-input multiple-output (MIMO) technologies. One of the prominent high frequency technologies is visible light communications (VLC). VLC provide a large unregulated …
Characterization Of Wide-Bandgap Sic Field Effect Transistors And Their Active Gate Driving Circuit In High Power Applications, Arijit Sengupta
Characterization Of Wide-Bandgap Sic Field Effect Transistors And Their Active Gate Driving Circuit In High Power Applications, Arijit Sengupta
Legacy Theses & Dissertations (2009 - 2024)
Silicon Carbide (SiC) devices are slowly becoming one of the most reliable choices for high power density, high switching frequency applications with higher efficiency than Gallium Nitride (GaN) and Silicon (Si) devices. For a wide range of applications, such as Electric Motor Drives, Switching Power Supplies, and Renewable Energy Circuits, SiC devices are being tested and are found to yield prominent results.In this research, the characterization of two similarly rated commercially available SiC devices - a trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and a cascoded Junction Field Effect Transistor (JFET) are done. It is followed by a comparative analysis of both …
Mixed Carrier Communication For Sixth-Generation Networks :, Ahmed Fahmy Mahmoud Hussein
Mixed Carrier Communication For Sixth-Generation Networks :, Ahmed Fahmy Mahmoud Hussein
Legacy Theses & Dissertations (2009 - 2024)
Recently, research on sixth-generation (6G) wireless networks has gained significant interest. By 2030, it is expected that 6G will introduce revolutionary applications and services. Thus, 6G is likely to expand across all available spectrum, including terahertz (THz) and optical frequency bands. Although 5G will offer a massive upgrade to the spectrum, the technology does not provide solutions to support a vast multitude of services and devices simultaneously.Motivated by the heterogeneity of wireless technologies, devices, and services, the Mixed Carrier Communication (MCC) concept is introduced for the first time. MCC is a novel concept that supports the 6G vision by enabling …
Statistical Methods To Unravel Cortical Mechanism Of Perception And Response To Auditory Stimuli, Ladan Moheimanian
Statistical Methods To Unravel Cortical Mechanism Of Perception And Response To Auditory Stimuli, Ladan Moheimanian
Legacy Theses & Dissertations (2009 - 2024)
Behavioral responses to auditory stimuli have a critical role in our daily activities. The perception of these stimuli and the generation of appropriate behavioral responses requires the interaction of thousands of neurons in the auditory-motor pathways in the brain. Despite their importance, still many neuroscientific questions about these interactions are remained to be answered. This may result from the limitations of brain recordings as well as statistical methods to analyze brain recordings. In this dissertation, I investigated underlying mechanisms that govern these neural interactions in the auditory-motor pathways using novel statistical techniques applied to the brain recordings from the surface …
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Legacy Theses & Dissertations (2009 - 2024)
One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.
Design And Simulation Of A Voltage Controlled Current Source For Electrical Impedance Tomography Applications, Farial Nur Maysha
Design And Simulation Of A Voltage Controlled Current Source For Electrical Impedance Tomography Applications, Farial Nur Maysha
Legacy Theses & Dissertations (2009 - 2024)
Electrical impedance tomography (EIT) is a simple, non-invasive and ionizing radiation-free imaging technology with potential application to medical diagnostics such as lung function, cardiac output, breast cancer, and cysts. Of the above imaging techniques, lung imaging has developed into the prime application for EIT. Because it presents an ill-posed inverse problem, EIT requires high-precision instrumentation and this thesis studies a new method for obtaining a high-precision current source and voltmeter for EIT. This thesis describes various simulation studies performed on the voltage-controlled current source (VCCS). The output impedance (Zo) of various types of Howland current source (HCS) including the basic …
Communications Using Deep Learning Techniques, Priti Gopal Pachpande
Communications Using Deep Learning Techniques, Priti Gopal Pachpande
Legacy Theses & Dissertations (2009 - 2024)
Deep learning (DL) techniques have the potential of making communication systems
Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song
Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song
Legacy Theses & Dissertations (2009 - 2024)
Molybdenum disulfide (MoS2) is a semiconducting 2D layered material that has attracted a lot of attention due to its material properties for electronics and optoelectronics device applications. These include a layer-dependent band gap, an indirect to direct energy transition at monolayer state, and strong light-matter interaction. A large majority of 2D materials and devices have been studied through micromechanical exfoliation for extraction and electron beam lithography for device fabrication. These methodologies while able to generate high quality materials and precisely fabricated devices, are not suitable for large scale production. Efforts have been made to make MoS2 and other 2D materials …
Autonomous Spectrum Enforcement : A Blockchain Approach, Maqsood Ahamed Abdul Careem
Autonomous Spectrum Enforcement : A Blockchain Approach, Maqsood Ahamed Abdul Careem
Legacy Theses & Dissertations (2009 - 2024)
A core limitation in existing wireless technologies is the scarcity of spectrum, to support the exponential increase in Internet-connected and multimedia-capable mobile devices and the increasing demand for bandwidth-intensive services. As a solution, Dynamic Spectrum Access policies are being ratified to promote spectrum sharing for various spectrum bands and to improve the spectrum utilization. This poses an equally challenging problem of enforcing these spectrum policies. The distributed and dynamic nature of policy violations necessitates the use of autonomous agents to implement efficient and agile enforcement systems. The design of such a fully autonomous enforcement system is complicated due to the …
Development And Demonstration Of A Processing And Assembly Pathway For A 3d-Synchronous Field Programmable Gate Array, Robert Carroll
Development And Demonstration Of A Processing And Assembly Pathway For A 3d-Synchronous Field Programmable Gate Array, Robert Carroll
Legacy Theses & Dissertations (2009 - 2024)
Field Programmable Gate Arrays (FPGA) are integrated circuits which can implement virtually any digital function and can be configured by a designer after manufacturing. This is beneficial when dedicated application specific runs are not time or cost effective; however, this flexibility comes at the cost of a substantially higher interconnect overhead. Three-dimensional (3D) integration can offer significant improvements in the FPGA architecture by stacking multiple device layers and interconnecting them in the third or vertical dimension, through the substrate, where path lengths are greatly reduced. This will allow for a higher density of devices and improvements in power consumption, signal …
Radiation Effects In Tantalum Oxide-Based Resistive Memory Devices, Joshua Stuart Holt
Radiation Effects In Tantalum Oxide-Based Resistive Memory Devices, Joshua Stuart Holt
Legacy Theses & Dissertations (2009 - 2024)
There is an increasing need for radiation-hardened electronics as space programs grow in number and scope. Scientific interest in long-term exploration, particularly in high-radiation environments such as Europa, as well as commercial interest in establishing permanent outposts, requires high tolerance of radiation effects. A flash memory device might survive for several years in low Earth orbit, but only a few days in orbit around Europa due to the extremely high levels of radiation encountered there. Meanwhile, commercial interests, including asteroid mining and building a base on the moon or Mars would require electronic systems that could survive for long periods …
Effect Of Ion Flux (Dose Rate) In Source-Drain Extension Ion Implantation For 10-Nm Node Finfet And Beyond On 300/450mm Platforms, Ming-Yi Shen
Legacy Theses & Dissertations (2009 - 2024)
The improvement of wafer equipment productivity has been a continuous effort of the semiconductor industry. Higher productivity implies lower product price, which economically drives more demand from the market. This is desired by the semiconductor manufacturing industry. By raising the ion beam current of the ion implanter for 300/450mm platforms, it is possible to increase the throughput of the ion implanter. The resulting dose rate can be comparable to the performance of conventional ion implanters or higher, depending on beam current and beam size. Thus, effects caused by higher dose rate must be investigated further. One of the major applications …
Development Of Iii-Sb Based Technologies For P-Channel Mosfet In Cmos Applications, Shailesh Kumar Madisetti
Development Of Iii-Sb Based Technologies For P-Channel Mosfet In Cmos Applications, Shailesh Kumar Madisetti
Legacy Theses & Dissertations (2009 - 2024)
The continuous scaling of silicon CMOS predicts the end of roadmap due to the difficulties such as that arise from electrostatic integrity, design complexities, and power dissipation. These fundamental and practical limitations bring the need for innovative design architectures or alternate materials with higher carrier transport than current Si based materials. New device designs such as multigate/gate-all-around architectures improve electrostatics while alternate materials like III-Vs such as III-As for electrons and III-Sbs for holes increase operational speed, lower power dissipation and thereby improve performance of the transistors due to their low effective mass and faster transport properties. Further, application of …
Novel Two-Dimensional Devices For Future Applications, Pratik Agnihotri
Novel Two-Dimensional Devices For Future Applications, Pratik Agnihotri
Legacy Theses & Dissertations (2009 - 2024)
The scalability of field effect transistor has led to the monumental success of complementary metal-oxide-semiconductor (CMOS) technology. In the past, device scaling was not the major issue to a greater extent. Recently with current technology nodes, transistor characteristics show signs of reduced performance due to short channel effects and other issues related to device scaling. Device designers look for innovative ways to enhance the transistor performance while keeping up with device miniaturization. Successful inventions include the development of tri-gate technology, gate all around (GAA) field effect transistors, silicon-on-insulator substrate, and high-k dielectrics. These developments have enabled the device scaling that …
Implementation Of Strategies To Improve The Reliability Of Iii-Nitride Photodetectors Towards The Realization Of Visible And Solar-Blind Imaging Arrays, John Bulmer
Legacy Theses & Dissertations (2009 - 2024)
Ultraviolet (UV) radiation detectors are being heavily researched for applications in non-line-of-sight (NLOS) communication systems, flame monitoring, biological detection, and astronomical studies. These applications are currently being met by the use of Si-based photomultiplier tubes (PMTs), which are bulky, fragile, expensive and require the use of external filters to achieve true visible-blind and solar-blind operation.
Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram
Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram
Legacy Theses & Dissertations (2009 - 2024)
III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for Dit and mobility. Here we employ gated Hall method to quantify the Dit spectrum at the high-κ oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values
Carbon 1d/2d Nanoelectronics : Integration And Device Applications, Zhaoying Hu
Carbon 1d/2d Nanoelectronics : Integration And Device Applications, Zhaoying Hu
Legacy Theses & Dissertations (2009 - 2024)
Graphene is a one-atom thick planar monolayer of sp2-bonded carbon atoms organized in a hexagonal crystal lattice. A single walled carbon nanotube (CNT) can be thought of as a graphene sheet rolled up into a seamless hollow cylinder with extremely high length-to-diameter ratio. Their ultra-thin body, large surface area, and exceptional electronic, optical and mechanical properties make these low-dimensional carbon materials ideal candidates for electronic applications. However, adopting low-dimensional carbon materials into semiconductor industry faces significant material and integration challenges. There is an urgent need for research at fundamental and applicative levels to find a roadmap for carbon nanomaterial to …
3d Integration With Coaxial Through Silicon Vias, Stephen Adamshick
3d Integration With Coaxial Through Silicon Vias, Stephen Adamshick
Legacy Theses & Dissertations (2009 - 2024)
3D integration using through-silicon-vias (TSVs) is gaining considerable attention due to its superior packaging efficiency resulting in higher functionality, improved performance and a reduction in power consumption. In order to implement 3D chip designs with TSV technology, robust TSV electrical models are required. Specifically, due to the increase of signal speeds into the gigahertz (GHz) spectrum, a high frequency electrical characterization best describes TSV behavior.
Study Of Millisecond Laser Annealing On Ion Implanted Soi And Application To Scaled Finfet Technology, Tyler J. Michalak
Study Of Millisecond Laser Annealing On Ion Implanted Soi And Application To Scaled Finfet Technology, Tyler J. Michalak
Legacy Theses & Dissertations (2009 - 2024)
The fabrication of metal-oxide-semiconductor field effect transistors (MOSFET) requires the engineering of low resistance, low leakage, and extremely precise p-n junctions. The introduction of finFET technology has introduced new challenges for traditional ion implantation and annealing techniques in junction design as the fin widths continue to decrease for improved short channel control. This work investigates the use of millisecond scanning laser annealing in the formation of n-type source/drain junctions in next generation MOSFET.
High Frequency Signal Transmission In Through Silicon Via Based 3d Integrated Circuit, Min Xu
High Frequency Signal Transmission In Through Silicon Via Based 3d Integrated Circuit, Min Xu
Legacy Theses & Dissertations (2009 - 2024)
Through silicon vias (TSVs) enable 3-dimensional (3D) integrated circuits (ICs), which have the potential to reduce the power consumption, interconnect length and overall communication latency in modern nanoelectronics systems. High-speed signal transmission channels through stacked silicon substrates are critical for 3D heterogeneous integration. This work presents systematic analyses of fabricated 3D IC test structures. This includes test structure design, fabrication, experimental characterization, equivalent circuit modeling and full wave simulations for high-speed signal transmission of the TSV based 3D IC channels.
Development Of Novel Technologies To Enhance Performance And Reliability Of Iii-Nitride Avalanche Photodiodes, Puneet Harischandra Suvarna
Development Of Novel Technologies To Enhance Performance And Reliability Of Iii-Nitride Avalanche Photodiodes, Puneet Harischandra Suvarna
Legacy Theses & Dissertations (2009 - 2024)
Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and …
Investigation Of Hfox/Cu Resistive Memory For Advanced Encryption Applications, Benjamin David Briggs
Investigation Of Hfox/Cu Resistive Memory For Advanced Encryption Applications, Benjamin David Briggs
Legacy Theses & Dissertations (2009 - 2024)
The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its …
Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong
Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong
Legacy Theses & Dissertations (2009 - 2024)
Electrical switching requirements for resistive random access memory (ReRAM) devices are multifaceted, based on device application. Thus, it is important to obtain an understanding of these switching properties and how they relate to the oxygen vacancy concentration and oxygen vacancy defects. Oxygen vacancy defects in the switching oxide of valence-change-based ReRAM (VCM ReRAM) play a significant role in device switching properties. Oxygen vacancies facilitate resistive switching as they form the conductive filament that changes the resistance state of the device. This dissertation will present two methods of modulating the defect concentration in VCM ReRAM composed of Pt/HfOx/Ti stack: …
Development Of A One-Dimensional Position Sensitive Detector For Tracking Applications, Leigh Kent Lydecker
Development Of A One-Dimensional Position Sensitive Detector For Tracking Applications, Leigh Kent Lydecker
Legacy Theses & Dissertations (2009 - 2024)
Optical Position Sensitive Detectors (PSDs) are a non-contact method of tracking the location of a light spot. Silicon-based versions of such sensors are fabricated with standard CMOS processing, are inexpensive and provide a real-time, analog signal output corresponding to the position of the light spot. Because they are non-contact, they do not degrade over time from surface friction due to repetitive sliding motion associated with standard full contact sliding potentiometers. This results in long, reliable device lifetimes. In this work, an innovative PSD was developed to replace the linear hard contact potentiometer currently being used in a human-computer interface architecture.
Properties Of Peg, Ppg And Their Copolymers Influence On The Gap-Fill Characteristics Of Damascene Interconnects, Kevin Ryan
Legacy Theses & Dissertations (2009 - 2024)
A laboratory scale plating cell was built that provided reproducible bottom-up fill results for the electrochemical deposition of copper in damascene features. Several techniques used in the full wafer plating tool were incorporated into the setup to accurately control the process conditions. These techniques included but were not limited to a voltage controlled `hot-entry' step, a custom coupon holder to allow sample rotation, a secondary thief electrode and an automatic entry system. The results of qualification experiments are presented to demonstrate that precise control was realized along with repeatable partial fill plating results. The qualified setup was then used to …
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport …
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry relies on CMOS technology which is nearing its scaling limitations. In order to continue the historical growth rate of the device density of digital logic chips, novel nanomaterials and nanodevices will need to be developed.
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Legacy Theses & Dissertations (2009 - 2024)
Characteristics of III-nitride based heterojunction devices are greatly influenced by the presence of high density of polarization induced interface charges. Research undertaken in the current doctoral thesis demonstrates the effect of presence of one, three and six sheets of polarization induced charges in three different III-nitride based devices, namely in a photocathode, a high electron mobility transistor (HEMT) and a hyperspectral detector structure. Through a systematic set of experiments and theoretical modeling an in-depth study of the interaction between multiple sheets of polarization induced charges and their impact on energy band profile was undertaken. Various device designs were studied and …
Synthesis, Processing And Characterization Of Silicon-Based Templated Nanowires, Jae Ho Lee
Synthesis, Processing And Characterization Of Silicon-Based Templated Nanowires, Jae Ho Lee
Legacy Theses & Dissertations (2009 - 2024)
Semiconductor and metallic nanowires have attracted substantial attention due to their wide variety of applications, ranging from nanoelectronics to energy storage devices. In particular, self-assembled silicon nanowires (SiNWs) may be an attractive alternative to conventionally processed planar silicon since SiNWs can potentially function as both the switch (i.e. transistor) and local interconnect (e.g. metal silicide nanowire) to form an inherently integrated nanoelectronic system. Also, hierarchical (branched) nanowire systems hold potential for catalysts or porous electrode applications for energy applications