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A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry continues scaling devices to smaller sizes, the need for next generation lithography technology for fabricating these small structures has always been at the forefront. Over the past few years, conventional optical lithography technology which has adopted a series of resolution enhancement techniques to support the scaling needs is expected to run out of steam in the near future. Extreme Ultra Violet lithography (EUVL) is being actively pursued by the semiconductor industry as one of the most promising next generation lithographic technologies. Most of the issues unique to EUVL arise from the use of 13.5 nm light …
Electron Beam Lithography Throughput And Resolution Enhancement With Innovative Blanker Design, Junru Ruan
Electron Beam Lithography Throughput And Resolution Enhancement With Innovative Blanker Design, Junru Ruan
Legacy Theses & Dissertations (2009 - 2024)
Electron Beam Lithography (EBL) is one of the most important and most widely used methods for nano-fabrication. The primary advantage of electron beam lithography is its high resolution, and its ability to expose nanometer features without a mask. On the other hand, one of the key limitations of electron beam lithography is throughput. Slow blanking speed is one of the major bottlenecks for the system speed. In this dissertation, I will first review the prior literature of high speed blanking. Thorough theoretical and experimental studies are done on the existing designs. Physical models are built and analytical ray tracing is …