Statistical, Nonlinear, and Soft Matter Physics Commons^™

Magnetic Interactions In Open-Shell Conjugated Polymers, Michael Steelman

Dissertations

Most materials are closed shell in which every electron participates in a bond, resulting in unremarkable magnetometry signatures and functionalities. While rare, modern technologies rely on magnetic materials in which unpaired electrons are localized to inorganic atomic centers. In recent decades, a collection of organic open-shell π-conjugated molecules have shown magnetic ordering, albeit at exceedingly low temperatures; a result of weak noncovalent intermolecular interactions limiting long range electronic exchange. Thus, practically applicable sp orbital magnetism that persists at or above room temperature remains a grand challenge for chemistry and physics. Despite the wide variety of chemical structures afforded by organic …

Structural Origin Of Thermal, Mechanical Properties And Morphological Behaviors Of Semiconducting Polymers, Song Zhang

Dissertations

The past decades have witnessed a surging exploration of semiconducting polymers for the application of wearable and flexible organic electronic devices. Despite the increased amounts of molecular engineered polymers and their much-improved electrical performances, a systematic study of the structure-thermal/mechanical property-morphology relationship of semiconducting polymers is still less investigated.

To understand the thin-film mechanical properties, a pseudo-free standing tensile tester was self-built and utilized to obtain their real-time stress-strain behaviors through uniaxial stretching on top of the water surface. It also enables the first quantitative measurement of fracture energy on ultrathin polymeric films. Through multiple mechanical testing methods (i.e., strain-rate …

Morphological Study Of Voids In Ultra-Large Models Of Amorphous Silicon, Durga Prasad Paudel

Dissertations

The microstructure of voids in pure and hydrogen-rich amorphous silicon (a:Si) network was studied in ultra-large models of amorphous silicon, using classical and quantum- mechanical simulations, on the nanometer length scale. The nanostructure, particularly voids of device grade ultra-large models of a:Si was studied, in which observed three-dimensional realistic voids were extended using geometrical approach within the experimental limit of void-volume fractions. In device-grade simulated models, the effect of void morphology; size, shape, number density, and distribution on simulated scattering intensities in small- angle region were investigated. The evolution of voids on annealing below the crystallization temperature …