Quantum Physics Commons^™

Optical Properties Of Ultrathin In(Ga)As/Gaas And In(Ga)N/Gan Quantum Wells, Yurii Maidaniuk

Graduate Theses and Dissertations

Recently, structures based on ultrathin quantum wells (QWs) began to play a critical role in modern devices, such as lasers, solar cells, infrared photodetectors, and light-emitting diodes. However, due to the lack of understanding of the formation mechanism of ultrathin QWs during the capping process, scientists and engineers cannot fully explore the potential of such structures. This study aims to investigate how structural parameters of ultrathin QWs affect their emission properties by conducting a systematic analysis of the optical properties of In(Ga)As/GaAs and In(Ga)N/GaN ultrathin QWs. Specifically, the analysis involved photoluminescence measurements combined with effective bandgap simulation, x-ray diffraction, and …

Tip-Enhanced Nano-Optical Imaging Of Superacid Treated Bilayer Mos2-Ws2 2d Lateral Heterostructures, Amala Dixit

USF Tampa Graduate Theses and Dissertations

Nanoscale optical characterization of two-dimensional (2D) materials and heterostructures is important for the design of novel optoelectronic flexible nano-devices. Nano-optical photoluminescence (PL) and Raman imaging of bilayer 2D materials has been a challenging problem due to weak signals. The exciton-dominated light emission of two-dimensional (2D) transition metal dichalcogenide (TMDC) materials is affected by the formation of defects and doping states. Previous studies have shown that chemical treatment modifies the defect and doping states of chemical vapor deposition (CVD)-grown monolayers of MoS₂ and WS₂, which provides a promising possibility for engineering the optoelectronic properties of these 2D TMDCs. …

Probing Quantized Excitations And Many-Body Correlations In Transition Metal Dichalcogenides With Optical Spectroscopy, Shao-Yu Chen

Doctoral Dissertations

Layered transition metal dichalcogenides (TMDCs) have attracted great interests in recent years due to their physical properties manifested in different polytypes: Hexagonal(H)-TMDC,which is semiconducting, exhibits strong Coulomb interaction and intriguing valleytronic properties; distorted octahedral(T’)-TMDC,which is semi-metallic, is predicted to exhibit rich nontrivial topological physics. In this dissertation,we employ the polarization-resolved micron-Raman/PL spectroscopy to investigate the optical properties of the atomic layer of several polytypes of TMDC. In the first part for polarization-resolved Raman spectroscopy, we study the lattice vibration of both H and T’-TMDC, providing a thorough understanding of the polymorphism of TMDCs. We demonstrate that Raman spectroscopy is a …

Plasmonic Enhancement Of Photoluminescence And Photobrightening In Cdse Quantum Dots, David Alan French

Graduate Theses and Dissertations

Quantum dots are gaining recognition not just in the physics and chemistry community, but in the public eye as well. Quantum dot technologies are now being used in sensors, detectors, and even television displays. By exciting quantum dots with light or electricity, they can be made to emit light, and by altering the quantum dot characteristics the wavelength can be finely tuned. The light emitted can be also be made more intense by an increase in the excitation energy. The excitation light can be increased via plasmonic enhancement, leading to increased luminescence. Aside from the relatively steady-state response, quantum dots …

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …

Investigating The Influence Of Interface And Vacancy Defects On The Growth Of Silicon Quantum Dots In Sio2, John Phelan

Electronic Thesis and Dissertation Repository

The effects of interface and vacancy defects on silicon quantum dot (Si-QD) growth are investigated using measurements of Time Resolved Photoluminescence (TRPL), Photoluminescence (PL) Spectroscopy and Electron Paramagnetic Resonance (EPR). Thermally grown SiO₂ thin films (280nm) were irradiated with high energy (400keV – 1MeV) silicon ions in order to introduce defects into the Si-QD growth layer of SiO₂. A noticeable increase in PL emission intensity is seen with the highest energy pre-implanted sample over a single implant sample. TRPL results show increased radiative lifetimes for the lower energy (400keV) pre-implant while little or no difference is seen …

The Study Of Optoelectronics In Semiconductor And Metallic Nanoparticle Hybrid Systems, Daniel G. Schindel

Electronic Thesis and Dissertation Repository

This thesis examines optoelectronics of photonic crystals and photonic nanofibers, especially with quantum dots and metallic nanoparticles doped into them. The simulations produced focus on the quantum dots, which are presented in an ensemble of 3-level systems.

In order to consider a photonic nanofiber in isolation, a model was developed for the density of photonic states. We studied two profiles, a square cross-section and a circular cross-section. In addition, we consider two architectures, one where a photonic crystal surrounds a dielectric fiber, and one where the fiber is another photonic crystal. We found several photonic nanofibers with a single bound …