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Full-Text Articles in Plasma and Beam Physics
The Effects Of Electron Irradiation On Mosfets, Mark D. Skeldon
The Effects Of Electron Irradiation On Mosfets, Mark D. Skeldon
Physics Theses & Dissertations
The characteristics of n and p-channel MOSFETs have been investigated while irradiated with electron radiation from Strontium 9Ø. The drain current vs. gate voltage of the p-channel MOSFET and the threshold voltage changes in n and p-channel MOSFETs have been studied with and without aluminum shielding. The switching characteristics and threshold voltage changes of COS/MOS dual input NAND gates have been investigated while exposed to electron radiation. Various methods of annealing the radiation damage to these devices is discussed.