Optics Commons^™

New Flexible Channels For Room Temperature Tunneling Field Effect Transistors, Boyi Hao, Anjana Asthana, Paniz Khanmohammadi, Paul Bergstrom, Douglas R. Banyai, Madhusudan A. Savaikar, John A. Jaszczak, Yoke Khin Yap

Department of Physics Publications

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various …