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Full-Text Articles in Optics

Synthesis, Characterization, And Fabrication Of All Inorganic Quantum Dot Leds, Haider Baqer Salman Dec 2016

Synthesis, Characterization, And Fabrication Of All Inorganic Quantum Dot Leds, Haider Baqer Salman

Graduate Theses and Dissertations

Quantum Dot LEDs with all inorganic materials are investigated in this thesis. The research was motivated by the potential disruptive technology of core shell quantum dots in lighting and display applications. These devices consisted of three main layers: hole transport layer (HTL), electron transport layer (ETL), and emissive layer where the emission of photons occurs. The latter part was formed of CdSe / ZnS core-shell quantum dots, which were synthesized following hot injection method. The ETL and the HTL were formed of zinc oxide nanocrystals and nickel oxide, respectively. Motivated by the low cost synthesis and deposition, NiO and ZnO …


Dual Role Of Sb Ions As Electron Traps And Hole Traps In Photorefractive Sn2P2S6 Crystals, Brant E. Kananen, Eric M. Golden, Sergey A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton Dec 2016

Dual Role Of Sb Ions As Electron Traps And Hole Traps In Photorefractive Sn2P2S6 Crystals, Brant E. Kananen, Eric M. Golden, Sergey A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton

Faculty Publications

Doping photorefractive single crystals of Sn2P2S6 with antimony introduces both electron and hole traps. In as-grown crystals, Sb3+ (5s2) ions replace Sn2+ ions. These Sb3+ ions are either isolated (with no nearby perturbing defects) or they have a charge-compensating Sn2+ vacancy at a nearest-neighbor Sn site. When illuminated with 633 nm laser light, isolated Sb3+ ions trap electrons and become Sb2+ (5s25p1) ions. In contrast, Sb3+ ions with an adjacent Sn vacancy trap holes during illumination. The hole is primarily …


Fabrication Of Infrared Photodetectors Utilizing Lead Selenide Nanocrystals, Justin Anthony Hill Dec 2016

Fabrication Of Infrared Photodetectors Utilizing Lead Selenide Nanocrystals, Justin Anthony Hill

Graduate Theses and Dissertations

Colloidal lead selenide and lead selenide / lead sulfide core/shell nanocrystals were grown using a wet chemical synthesis procedure. Absorbance and photoluminescence measurements were made to verify the quality of the produced nanocrystals. Absorbance spectra were measured at room temperature, while photoluminescence spectra were measured at 77 K. Organic ligands were exchanged for shorter ligands in order to increase the conductivity of the nanocrystals. Absorption and PL spectra for both core and core/shell nanocrystals were compared. Interdigital photodetector devices with varying channel widths were fabricated by depositing gold onto a glass substrate. Lead selenide nanocrystals were deposited onto these metallic …


An Antireflective Tco Film For Czts Solar Cells, Feng Zhan Oct 2016

An Antireflective Tco Film For Czts Solar Cells, Feng Zhan

The 8th International Conference on Physical and Numerical Simulation of Materials Processing

No abstract provided.


Photonicstd-2d: Modeling Light Scattering In Periodic Multilayer Photonic Structures, Alexey Bondarev, Shaimaa Azzam, Zhaxylyk Kudyshev, Alexander V. Kildishev Aug 2016

Photonicstd-2d: Modeling Light Scattering In Periodic Multilayer Photonic Structures, Alexey Bondarev, Shaimaa Azzam, Zhaxylyk Kudyshev, Alexander V. Kildishev

The Summer Undergraduate Research Fellowship (SURF) Symposium

Efficient modeling of electromagnetic processes in optical and plasmonic metamaterials is important for enabling new and exciting ways to manipulate light for advanced applications. In this work, we put together a tool for numerical simulation of propagation of normally incident light through a nanostructured multilayer composite material. The user builds a unit cell of a given material layer-by-layer starting from a substrate up to a superstrate, splitting each layer further into segments. The segments are defined by width and material -- dielectric, metal or active medium. Simulations are performed with the finite difference time domain (FDTD) method. A database of …


Symbiotic Plasmonic Nanomaterials: Synthesis And Properties, Abhinav Malasi May 2016

Symbiotic Plasmonic Nanomaterials: Synthesis And Properties, Abhinav Malasi

Doctoral Dissertations

Metal particles of the dimensions of the order of 1 to 100's of nanometers show unique properties that are not clearly evident in their bulk state. These nanoparticles are highly reactive and sensitive to the changes in the vicinity of the particle surface and hence find applications in the field of sensing of chemical and biological agents, catalysis, energy harvesting, data storage and many more. By synthesizing bimetallic nanoparticles, a single nanoparticle can show multifunctional characteristics. The focus of this thesis is to detail the synthesis and understand the properties of bimetallic nanomaterial systems that show interesting optical, chemical, and …


Zncdmgse As A Materials Platform For Advanced Photonic Devices: Broadband Quantum Cascade Detectors And Green Semiconductor Disk Lasers, Joel De Jesus Feb 2016

Zncdmgse As A Materials Platform For Advanced Photonic Devices: Broadband Quantum Cascade Detectors And Green Semiconductor Disk Lasers, Joel De Jesus

Dissertations, Theses, and Capstone Projects

The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for …


System And Method For Identifying Electrical Properties Of Integrate Circuits, Mary Y. Lanzerotti Jan 2016

System And Method For Identifying Electrical Properties Of Integrate Circuits, Mary Y. Lanzerotti

AFIT Patents

A new method for displaying electrical properties for integrated circuit (IC) layout designs provides for improved human visualization of those properties and comparison of as designed layout design parameters to as specified layout design parameters and to as manufactured layout parameters. The method starts with a circuitry as designed layout in a first digital format, extracts values for electrical properties from that circuitry as designed layout then annotates those values back into the first digital format. The annotated circuitry as designed layout is then converted from the first digital format to a second digital format that can be converted to …


The Dawn Of New Quantum Dots: Synthesis And Characterization Of Ge1-Xsnx Nanocrystals For Tunable Bandgaps., Richard J. Esteves Jan 2016

The Dawn Of New Quantum Dots: Synthesis And Characterization Of Ge1-Xsnx Nanocrystals For Tunable Bandgaps., Richard J. Esteves

Theses and Dissertations

Ge1-xSnx alloys are among a small class of benign semiconductors with composition tunable bandgaps in the near-infrared spectrum. As the amount of Sn is increased the band energy decreases and a transition from indirect to direct band structure occurs. Hence, they are prime candidates for fabrication of Si-compatible electronic and photonic devices, field effect transistors, and novel charge storage device applications. Success has been achieved with the growth of Ge1-xSnx thin film alloys with Sn compositions up to 34%. However, the synthesis of nanocrystalline alloys has proven difficult due to larger discrepancies (~14%) in …


Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian Jan 2016

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …