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Full-Text Articles in Engineering Physics
Electrical Activation Studies Of Silicon Implanted AlXGa1-XN, Timothy W. Zens
Electrical Activation Studies Of Silicon Implanted AlXGa1-XN, Timothy W. Zens
Theses and Dissertations
Electrical activation studies of silicon implanted AlxGa1-xN grown on sapphire substrates were conducted as a function of ion dose, anneal temperature, and anneal time. Silicon ion doses of 1x1013, 5x1013, and 1x1014 cm-2 were implanted in AlxGa1-xN samples with aluminum mole fractions of 0.1 and 0.2 at an energy of 200 keV at room temperature. The samples were proximity cap annealed at temperatures from 1100 to 1350 ºC and anneal times of 20 to 40 minutes with a 500 Å thick AlN cap in a nitrogen environment. The Hall coefficient …
Luminescence Study Of Ion-Implanted Gallium Nitride, Eric Silkowski
Luminescence Study Of Ion-Implanted Gallium Nitride, Eric Silkowski
Theses and Dissertations
Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 1013 to 1 x 1015/cm-2. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature …