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Full-Text Articles in Engineering Physics
Limitations In Time Resolved Photoluminescence Of Gallium Nitride Using A Streak Camera, Thomas R. Jost
Limitations In Time Resolved Photoluminescence Of Gallium Nitride Using A Streak Camera, Thomas R. Jost
Theses and Dissertations
Semiconductor performance is often characterized in terms of the rate at which its carrier recombination processes occur. Carrier recombination, including radiative, and Shockley-Read-Hall and Auger (both nonradiative), occurs at ultra-fast times in the picosecond or femtosecond regimes. A device which can measure both spectral data and temporal phenomena at this speed is the streak camera. The capability to do time-resolved spectroscopy of wide band gap semiconductors using a streak camera has been established at AFIT for the first time. Time resolved photoluminescence (TRPL) from samples of gallium nitride were measured at temperatures of 5 K over spectral bands of 36.6 …
Luminescence Study Of Ion-Implanted Gallium Nitride, Eric Silkowski
Luminescence Study Of Ion-Implanted Gallium Nitride, Eric Silkowski
Theses and Dissertations
Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 1013 to 1 x 1015/cm-2. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature …