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Articles 31 - 55 of 55
Full-Text Articles in Engineering Physics
Characterization Of Laser-Generated Aluminum Plasma Using Ion Time-Of-Flight And Optical Emission Spectroscopy, Md. Haider A. Shaim, Hani E. Elsayed-Ali
Characterization Of Laser-Generated Aluminum Plasma Using Ion Time-Of-Flight And Optical Emission Spectroscopy, Md. Haider A. Shaim, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Laser plasma generated by ablation of an Al target in vacuum is characterized by ion time-of-flight combined with optical emission spectroscopy. A Q-switched Nd:YAG laser (wavelength λ = 1064 nm, pulse width τ ∼ 7 ns, and fluence F ≤ 38 J/cm2) is used to ablate the Al target. Ion yield and energy distribution of each charge state are measured. Ions are accelerated according to their charge state by the double-layer potential developed at the plasma-vacuum interface. The ion energy distribution follows a shifted Coulomb-Boltzmann distribution. Optical emission spectroscopy of the Al plasma gives significantly lower plasma temperature …
Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza
Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza
Electrical & Computer Engineering Faculty Publications
Hydrogenated silicon (Si:H) thin films have been prepared by radio frequency (RF) magnetron sputtering. The effect of hydrogen gas concentration during sputtering on the resultant film structural and optical properties has been investigated by real time spectroscopic ellipsometry (RTSE) and grazing incidence x-ray diffraction (GIXRD). The analysis of in-situ RTSE data collected during sputter deposition tracks the evolution of surface roughness and film bulk layer thickness with time. Growth evolution diagrams depicting amorphous, nanocrystalline and mixed-phase regions for low and high deposition rate Si:H are constructed and the effects of process parameter (hydrogen gas concentration, total pressure and RF power) …
Perspective: The Physics, Diagnostics, And Applications Of Atmospheric Pressure Low Temperature Plasma Sources Used In Plasma Medicine, M. Laroussi
Electrical & Computer Engineering Faculty Publications
Low temperature plasmas have been used in various plasma processing applications for several decades. But it is only in the last thirty years or so that sources generating such plasmas at atmospheric pressure in reliable and stable ways have become more prevalent. First, in the late 1980s, the dielectric barrier discharge was used to generate relatively large volume diffuse plasmas at atmospheric pressure. Then, in the early 2000s, plasma jets that can launch cold plasma plumes in ambient air were developed. Extensive experimental and modeling work was carried out on both methods and much of the physics governing such sources …
Aluminum Multicharged Ion Generation From Femtosecond Laser Plasma, Md. Haider A. Shaim, Frederick Guy Wilson, Hani E. Elsayed-Ali
Aluminum Multicharged Ion Generation From Femtosecond Laser Plasma, Md. Haider A. Shaim, Frederick Guy Wilson, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Aluminum multicharged ion generation from femtosecond laser ablation is studied. A Ti:sapphire laser (wavelength 800 nm, pulse width ∼100 fs, and maximum laser fluence of 7.6 J/cm2) is used. Ion yield and energy distribution of each charge state are measured. A linear relationship between the ion charge state and the equivalent acceleration energy of the individual ion species is observed and is attributed to the presence of an electric field within the plasma-vacuum boundary that accelerates the ions. The ion energy distribution follows a shifted Coulomb-Boltzmann distribution. For Al1+ and Al2+, the ion energy distributions …
A New Method For Grain Texture Manipulation In Post-Deposition Niobium Films, J. Musson, L. Phillips, K. Macha, H. Elsayed-Ali, W. Cao
A New Method For Grain Texture Manipulation In Post-Deposition Niobium Films, J. Musson, L. Phillips, K. Macha, H. Elsayed-Ali, W. Cao
Electrical & Computer Engineering Faculty Publications
Niobium films are frequently grown using forms of energetic condensation, with modest substrate temperatures to control grain structure. As an alternative, energetic deposition onto a cold substrate results in a dense amorphous film, with a much larger energy density than the re-crystallized state. Re-crystallization is then performed using a pulsed UV (HIPPO) laser, with minimal damage to the substrate. In addition, a graded interface between the substrate and Nb film is created during the early stages of energetic deposition. Experimental approach and apparatus are described.
Rapid And Accurate C-V Measurements, Ji-Hong Kim, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, David Nminibapiel, Joseph J. Kopanski
Rapid And Accurate C-V Measurements, Ji-Hong Kim, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, David Nminibapiel, Joseph J. Kopanski
Electrical & Computer Engineering Faculty Publications
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100-MHz applied sine wave, which swings from accumulation to strong inversion, is digitized directly using an oscilloscope from the MOS capacitor under test. A C-V curve can be constructed directly from this data but is severely distorted due to nonideal behavior of real measurement systems. The key advance of this paper is to extract the system response function using the same measurement setup and a known MOS capacitor. The system response correction to the measured C-V curve of the unknown …
Temporary Bonding With Polydimethylglutarimide Based Lift Off Resist As A Layer Transfer Platform, T. Matsumae, A. D. Koehler, J. D. Greenlee, T. J. Anderson, H. Baumgart, G. G. Jernigan, K. D. Hobart, F. J. Kub
Temporary Bonding With Polydimethylglutarimide Based Lift Off Resist As A Layer Transfer Platform, T. Matsumae, A. D. Koehler, J. D. Greenlee, T. J. Anderson, H. Baumgart, G. G. Jernigan, K. D. Hobart, F. J. Kub
Electrical & Computer Engineering Faculty Publications
Bonding of lift off resist (LOR) was performed to realize temporary wafer bonding without residue. Bonding process conditions such as spin speed, pre-bake temperature, and bonding temperature were optimized to obtain a large bonded area with high bond strength. Under optimized process conditions, a bonded area covering over 98% of the wafer surface, with a room temperature bond strength of nearly 5 J/m2 is achieved. During razor blade testing, fracture often occurs at the Si wafer. Moreover, debonding using an N-Methyl-2-pyrrolidone (NMP)-based solvent left the wafer surface extremely small amount of residue. Thus, the optimized bonding processed developed in …
Evaluation Of The Effects Of A Plasma Activated Medium On Cancer Cells, S. Mohades, M. Laroussi, J. Sears, N. Barekzi, H. Razavi
Evaluation Of The Effects Of A Plasma Activated Medium On Cancer Cells, S. Mohades, M. Laroussi, J. Sears, N. Barekzi, H. Razavi
Electrical & Computer Engineering Faculty Publications
The interaction of low temperature plasma with liquids is a relevant topic of study to the field of plasma medicine. This is because cells and tissues are normally surrounded or covered by biological fluids. Therefore, the chemistry induced by the plasma in the aqueous state becomes crucial and usually dictates the biological outcomes. This process became even more important after the discovery that plasma activated media can be useful in killing various cancer cell lines. Here, we report on the measurements of concentrations of hydrogen peroxide, a species known to have strong biological effects, produced by application of plasma to …
Plasma Processes And Polymers Special Issue On: Plasma And Cancer, Mounir Laroussi, Michael Keidar
Plasma Processes And Polymers Special Issue On: Plasma And Cancer, Mounir Laroussi, Michael Keidar
Electrical & Computer Engineering Faculty Publications
During the last two decades, research efforts on the application of low temperature plasmas in biology and medicine have positioned nonequilibrium lowtemperature plasmas as a technology that has the potential of revolutionizing healthcare.[1,2] Low temperature plasmas can be applied in direct contact with living tissues to inactivate bacteria,[3] to disinfect wounds and accelerate wound healing,[4] and to induce damage in some cancer cells.[5–11]
Analysis Of Interband, Intraband, And Plasmon Polariton Transitions In Silver Nanoparticle Films Via In Situ Real-Time Spectroscopic Ellipsometry, S. A. Little, R. W. Collins, S. Marsillac
Analysis Of Interband, Intraband, And Plasmon Polariton Transitions In Silver Nanoparticle Films Via In Situ Real-Time Spectroscopic Ellipsometry, S. A. Little, R. W. Collins, S. Marsillac
Electrical & Computer Engineering Faculty Publications
The dielectric function of Ag nanoparticle films, deduced from an analysis of in situ real-time spectroscopic ellipsometry (RTSE) measurements, is found to evolve with time during deposition in close consistency with the film structure, deduced in the same RTSE analysis. In the nucleation regime, the intraband dielectric function component is absent and plasmon polariton behavior dominates. Only at nuclei contact, does the intraband amplitude appear, increasing above zero. Both intraband and plasmon amplitudes coexist during surface smoothening associated with coalescence. The intraband relaxation time increases rapidly after surface smoothening is complete, also in consistency with the thin film structural evolution.
Ignition Of A Large Volume Plasma With A Plasma Jet, M. Laroussi, M. A. Akman
Ignition Of A Large Volume Plasma With A Plasma Jet, M. Laroussi, M. A. Akman
Electrical & Computer Engineering Faculty Publications
Here we report on a method to generate a long plasma plume and to ignite a large volume plasma by means of the jet. The plasma plume is generated by our tube reactor and then introduced into a chamber where the pressure is controlled. We discovered there are three operating phases:Aphasewhere the plume length remains approximately constant, followed by a second phase where the jet increases in length as the pressure decreases. Then at pressures below 70 Torr a mode transition occurs where the plume length decreases and the plasma expands until the entire chamber is filled.
Pulsed Laser Deposition Of Graphite Counter Electrodes For Dye-Sensitized Solar Cells, Krishna P. Acharya, Himal Khatri, Sylvain Marsillac, Bruno Ullrich, Pavel Anzenbacher, Mikhail Zamkov
Pulsed Laser Deposition Of Graphite Counter Electrodes For Dye-Sensitized Solar Cells, Krishna P. Acharya, Himal Khatri, Sylvain Marsillac, Bruno Ullrich, Pavel Anzenbacher, Mikhail Zamkov
Electrical & Computer Engineering Faculty Publications
We report on pulsed laser deposition of graphite onto flexible plastic and conductive glass substrates for use as a counter electrode in dye-sensitized solar cells. The efficiency of as-prepared graphite electrodes was tested using CdS-sensitized solar cell architecture resulting in external quantum efficiency comparable to that of conventional platinum counter electrodes. This work highlights the possibility of using pulsed laser deposited graphite as a low-cost alternative to platinum, which could be fabricated both on flexible and rigid substrates.
Finite Element Analysis Of Ring-Shaped Emission Profile In Plasma Bullet, Yukinori Sakiyama, David B. Graves, Julien Jarrige, Mounir Laroussi
Finite Element Analysis Of Ring-Shaped Emission Profile In Plasma Bullet, Yukinori Sakiyama, David B. Graves, Julien Jarrige, Mounir Laroussi
Electrical & Computer Engineering Faculty Publications
Using a one-way coupled model of neutral gas flow and plasma dynamics we report a mechanism to explain the ring-shaped emission pattern that has been observed experimentally in plasma bullets at atmospheric pressure. We solve a fluid model with the local field approximation in one-dimensional cylindrical coordinates, corresponding to a cross-section of a plasma bullet. Pulselike uniform electric field is assumed to be applied perpendicular to the simulation domain. Time and spatially resolved spectroscopic measurements support the simulation results.
Comment On "Superfluid Turbulence From Quantum Kelvin Wave To Classical Kolmogorov Cascades", Jeffrey Yepez, George Vahala, Linda L. Vahala, Min Soe
Comment On "Superfluid Turbulence From Quantum Kelvin Wave To Classical Kolmogorov Cascades", Jeffrey Yepez, George Vahala, Linda L. Vahala, Min Soe
Electrical & Computer Engineering Faculty Publications
No abstract provided.
Coupled Ray-Tracing And Fokker-Planck Ebw Modeling For Spherical Tokamaks, Jakub Urban, Joan Decker, Y. Peysson, Josef Preinhaelter, Gary Taylor, Linda L. Vahala, George Vahala
Coupled Ray-Tracing And Fokker-Planck Ebw Modeling For Spherical Tokamaks, Jakub Urban, Joan Decker, Y. Peysson, Josef Preinhaelter, Gary Taylor, Linda L. Vahala, George Vahala
Electrical & Computer Engineering Faculty Publications
The AMR (Antenna—Mode-conversion—Ray-tracing) code [1, 2] has been recently coupled with the LUKE [3] Fokker-Planck code. This modeling suite is capable of complex simulations of electron Bernstein wave (EBW) emission, heating and current drive. We employ these codes to study EBW heating and current drive performance under spherical tokamak (ST) configurations—typical NSTX discharges are employed. EBW parameters, such as frequency, antenna position and direction, are varied and optimized for particular configurations and objectives. In this way, we show the versatility of EBWs.
Dynamics Of An Atmospheric Pressure Plasma Plume Generated By Submicrosecond Voltage Pulses, Xinpei Lu, Mounir Laroussi
Dynamics Of An Atmospheric Pressure Plasma Plume Generated By Submicrosecond Voltage Pulses, Xinpei Lu, Mounir Laroussi
Electrical & Computer Engineering Faculty Publications
Nonequilibrium plasmas driven by submicrosecond high voltage pulses have been proven to produce high-energy electrons, which in turn lead to enhanced ionization and excitations. Here, we describe a device capable of launching a cold plasma plume in the surrounding air. This device, "the plasma pencil," is driven by few hundred nanosecond wide pulses at repetition rates of a few kilohertz. Correlation between current-voltage characteristics and fast photography shows that the plasma plume is in fact a small bulletlike volume of plasma traveling at unusually high velocities. A model based on photoionization is used to explain the propagation kinetics of the …
Optimization Of Ultraviolet Emission And Chemical Species Generation From A Pulsed Dielectric Barrier Discharge At Atmospheric Pressure, Xinpei Lu, Mounir Laroussi
Optimization Of Ultraviolet Emission And Chemical Species Generation From A Pulsed Dielectric Barrier Discharge At Atmospheric Pressure, Xinpei Lu, Mounir Laroussi
Electrical & Computer Engineering Faculty Publications
One of the attractive features of nonthermal atmospheric pressure plasmas is the ability to achieve enhanced gas phase chemistry without the need for elevated gas temperatures. This attractive characteristic recently led to their extensive use in applications that require low temperatures, such as material processing and biomedical applications. The agents responsible for the efficient plasma reactivity are the ultraviolet (UV) photons and the chemically reactive species. In this paper, in order to optimize the UV radiation and reactive species generation efficiency, the plasma was generated by a dielectric barrier discharge driven by unipolar submicrosecond square pulses. To keep the discharge …
Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac
Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac
Electrical & Computer Engineering Faculty Publications
γ-In[sub 2]Se[sub 3] thin film are deposited for various substrate temperatures in the range of 523–673 K. This study shows that at 573 and 673 K the thin films are well crystallized with grains aligned along the c axis. Between these temperatures, a domain of instability appears where the γ-In[sub 2]Se[sub 3] thin films have a randomly orientation and the c-lattice parameter increases. The presence of the metastable phase κ-In[sub 2]Se[sub 3], during the growth, can explain the existence of this domain of instability. The insertion of Zn during the preparation process allows us to stabilize the phase κ at …
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Electrical & Computer Engineering Faculty Publications
CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …
High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman
High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman
Electrical & Computer Engineering Faculty Publications
A Cu(InAl)Se2solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through …
Textured Mos 2 Thin Films Obtained On Tungsten: Electrical Properties Of The W/Mos 2 Contact, E. Gourmelon, J. C. Bernède, J. Pouzet, S. Marsillac
Textured Mos 2 Thin Films Obtained On Tungsten: Electrical Properties Of The W/Mos 2 Contact, E. Gourmelon, J. C. Bernède, J. Pouzet, S. Marsillac
Electrical & Computer Engineering Faculty Publications
Textured films of molybdenum disulfide have been obtained by solid state reaction between the constituents in thin films form when a (200) oriented tungsten sheet is used as substrate. The crystallites have their c axis perpendicular to the plane of the substrate. The annealing conditions are T=1073K and t=30 min. The films are stoichoimetric and p type. Such highly textured films are achieved without foreign atom addition (Ni, Co...). It appears, as shown by x-ray photoelectron spectroscopy, that a thin WS2 layer is present at the interface W/MoS2. The crystallization process is discussed by a …
Atomic Hydrogen Cleaning Of Inp(100) For Preparation Of A Negative Electron Affinity Photocathode, K. A. Elamrawi, M. A. Hafez, H. E. Elsayed-Ali
Atomic Hydrogen Cleaning Of Inp(100) For Preparation Of A Negative Electron Affinity Photocathode, K. A. Elamrawi, M. A. Hafez, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Atomic hydrogen cleaning is used to clean InP(100) negative electron affinity photocathodes. Reflection high-energy electron diffraction patterns of reconstructed, phosphorus-stabilized, InP(100) surfaces are obtained after cleaning at ∼400 °C. These surfaces produce high quantum efficiency photocathodes (∼8.5%), in response to 632.8 nm light. Without atomic hydrogen cleaning, activation of InP to negative electron affinity requires heating to ∼530 °C. At this high temperature, phosphorus evaporates preferentially and a rough surface is obtained. These surfaces produce low quantum efficiency photocathodes (∼0.1%). The use of reflection high-energy electron diffraction to measure the thickness of the deposited cesium layer during activation by correlating …
Effect Of Magnetic And Density Fluctuations On The Propagation Of Lower Hybrid Waves In Tokamaks, George Vahala, Linda L. Vahala, Paul T. Bonoli
Effect Of Magnetic And Density Fluctuations On The Propagation Of Lower Hybrid Waves In Tokamaks, George Vahala, Linda L. Vahala, Paul T. Bonoli
Electrical & Computer Engineering Faculty Publications
Lower hybrid waves have been used extensively for plasma heating, current drive, and ramp-up as well as sawteeth stabilization, The wave kinetic equation for lower hybrid wave propagation is extended to include the effects of both magnetic and density fluctuations. This integral equation is then solved by Monte Carlo procedures for a toroidal plasma. It is shown that even for magnetic/density fluctuation levels on the order of 10-4, there are significant magnetic fluctuation effects on the wave power deposition into the plasma. This effect is quite pronounced if the magnetic fluctuation spectrum is peaked within the plasma. For …
Systematic Estimate Of Binding Energies Of Weakly Bound Diatomic Molecules, Linda L. Vahala, Mark D. Havey
Systematic Estimate Of Binding Energies Of Weakly Bound Diatomic Molecules, Linda L. Vahala, Mark D. Havey
Electrical & Computer Engineering Faculty Publications
There is often insufficient spectroscopic data for a full RKR inversion to yield a potential for weakly bound diatomic molecules. In these cases, parametrized functions such as the Morse or Thakkar potentials may be used to obtain estimates of the binding energy. The Thakkar potential is more flexible, and has been used successfully on some weakly bound systems. In the more usual case, the Thakkar parameter p, which determines long range behavior R-p, is chosen by p=-a1-1, where a1 is the first Dunham coefficient; p is usually noninteger. The authors present …
Picosecond Laser Pulse Irradiation Of Crystalline Silicon, K. L. Merkle, H. Baumgart, R.H. Uebbing, F. Phillipp
Picosecond Laser Pulse Irradiation Of Crystalline Silicon, K. L. Merkle, H. Baumgart, R.H. Uebbing, F. Phillipp
Electrical & Computer Engineering Faculty Publications
Morphology changes introduced by picosecond laser pulses at λ = 532 nm and 355 nm in (111) and (100) silicon samples are studied by means of optical and high-voltage electron microscopy. Depending on energy fluence, orientation and wavelength, amorphous or highly defective regions may be created. From an analysis of damage thresholds and damage depth distributions it is concluded that melting and energy confinement precedes the formation of the structural changes.