Open Access. Powered by Scholars. Published by Universities.®
- Discipline
-
- Atomic, Molecular and Optical Physics (167)
- Condensed Matter Physics (159)
- Other Physics (100)
- Engineering (40)
- Materials Science and Engineering (35)
-
- Nanoscience and Nanotechnology (18)
- Other Materials Science and Engineering (11)
- Statistical, Nonlinear, and Soft Matter Physics (11)
- Mechanical Engineering (6)
- Engineering Science and Materials (5)
- Chemistry (4)
- Engineering Mechanics (3)
- Materials Chemistry (3)
- Metallurgy (3)
- Biomedical Engineering and Bioengineering (2)
- Electrical and Computer Engineering (2)
- Mechanics of Materials (2)
- Other Mechanical Engineering (2)
- Applied Mathematics (1)
- Arts and Humanities (1)
- Biological and Chemical Physics (1)
- Biomaterials (1)
- Biomedical Devices and Instrumentation (1)
- Biotechnology (1)
- Chemical Engineering (1)
- Civil and Environmental Engineering (1)
- Computer Sciences (1)
- Keyword
-
- Spin crossover (4)
- Cluster deposition (2)
- Heusler compounds (2)
- In Se 4 3 (2)
- Magnetic anisotropy (2)
-
- Magnetic nanoparticles (2)
- Magnetocrystalline anisotropy (2)
- Molecular spintronics (2)
- TEM (2)
- Aberration correction (1)
- Activation barriers (1)
- Additive manufacturing (1)
- Aggregation (1)
- Air (1)
- Alloys (1)
- Alnico (1)
- Alpha Irradiation (1)
- American football (1)
- Amorphous Boron Carbide (1)
- Amorphous silicon oxycarbide (1)
- Anisotropic exchange stiffness (1)
- Antibacterial properties (1)
- Antiferromagnetism (1)
- Attenuation coefficient (1)
- Au(111) (1)
- Back-to-back Schottky barrier (1)
- Berry phase (1)
- Blast (1)
- Boron-rich semiconductor (1)
- Bridge (1)
- Publication Year
- Publication
-
- Nebraska Center for Materials and Nanoscience: Faculty Publications (59)
- Xiaoshan Xu Papers (32)
- Peter Dowben Publications (30)
- Xia Hong Publications (21)
- Kirill Belashchenko Publications (12)
-
- Shireen Adenwalla Papers (12)
- Alexei Gruverman Publications (10)
- Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research (5)
- Stephen Ducharme Publications (2)
- Sy-Hwang Liou Publications (2)
- Christian Binek Publications (1)
- David Sellmyer Publications (1)
- Department of Civil and Environmental Engineering: Dissertations, Theses, and Student Research (1)
- Department of Engineering Mechanics: Dissertations, Theses, and Student Research (1)
- Department of Mechanical and Materials Engineering: Faculty Publications (1)
- Department of Physics and Astronomy: Dissertations, Theses, and Student Research (1)
- Department of Physics and Astronomy: Faculty Publications (1)
- Dissertations and Doctoral Documents, University of Nebraska-Lincoln, 2023– (1)
- Honors Program: Expanded Learning Clubs (1)
- Ralph Skomski Publications (1)
- University Studies (University of Nebraska) (1888–1984) (1)
Articles 151 - 180 of 196
Full-Text Articles in Engineering Physics
Structure And Magnetism Of Mnau Nanoclusters, X. Wei, Damien Le Roy, Ralph Skomski, Xingzhong Li, Zhiguang Sun, Jeffrey E. Shield, M. J. Kramer, David J. Sellmyer
Structure And Magnetism Of Mnau Nanoclusters, X. Wei, Damien Le Roy, Ralph Skomski, Xingzhong Li, Zhiguang Sun, Jeffrey E. Shield, M. J. Kramer, David J. Sellmyer
Nebraska Center for Materials and Nanoscience: Faculty Publications
Equiatomic MnAu clusters with average sizes of 4 and 10 nm are produced by inert-gas condensation. As-produced clusters are used to form both dense cluster films and films with clusters embedded in a W matrix with a cluster volume fraction of 25%. Both structure and magnetism are size-dependent. Structural analysis of the 10 nm clusters indicate a distorted tetragonal body-centered cubic structure with lattice parameters a=0.315 and c=0.329 nm. The 4 nm clusters have a partially ordered tetragonal L10 structure with lattice parameters a=0.410 nm and c=0.395 nm. Magnetic properties of the clusters show evidence at …
Metastability Of Free Cobalt And Iron Clusters: A Possible Precursor To Bulk Ferromagnetism, Xiaoshan Xu, Shuangye Yin, Ramiro Moro, Anthony Liang, John Bowlan, Walt A. De Heer
Metastability Of Free Cobalt And Iron Clusters: A Possible Precursor To Bulk Ferromagnetism, Xiaoshan Xu, Shuangye Yin, Ramiro Moro, Anthony Liang, John Bowlan, Walt A. De Heer
Xiaoshan Xu Papers
Homonuclear cobalt and iron clusters CoN and FeN measured in a cryogenic molecular beam exist in two states with distinct magnetic moments (μ), polarizabilities, and ionization potentials, indicating distinct valences. The μ is approximately quantized: μN ~ 2NμB in the ground states and μN* ~ NμB in the excited states for Co; μN ~ 3N μB and μN * ~ NμB for Fe. At a large size, the average μ of the two states converges to the bulk value with diminishing ionization potential differences. …
Colossal Negative Magnetoresistance In Dilute Fluorinated Graphene, X. Hong, S.-H. Cheng, C. Herding, J. Zhu
Colossal Negative Magnetoresistance In Dilute Fluorinated Graphene, X. Hong, S.-H. Cheng, C. Herding, J. Zhu
Xia Hong Publications
Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by …
Resonant Photoemission Of Rare Earth Doped Gan Thin Films, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben
Resonant Photoemission Of Rare Earth Doped Gan Thin Films, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben
Peter Dowben Publications
The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5–6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f14 occupancy.
Magnetism Of Cluster-Deposited Y–Co Nanoparticles, Balamuruga Balamurugan, Ralph Skomski, Xingzhong Li, V. R. Shah, George C. Hadjipanayis, Jeffrey E. Shield, David J. Sellmyer
Magnetism Of Cluster-Deposited Y–Co Nanoparticles, Balamuruga Balamurugan, Ralph Skomski, Xingzhong Li, V. R. Shah, George C. Hadjipanayis, Jeffrey E. Shield, David J. Sellmyer
Nebraska Center for Materials and Nanoscience: Faculty Publications
Nanoparticles of YCo2, YCo3, and YCo5 are produced by cluster-deposition and investigated both structurally and magnetically. The nanoparticles have sizes of less than 10 nm and are superparamagnetic at 300 K, irrespective of stoichiometry. As-produced nanoparticles exhibit disordered structures with magnetic properties differing from those of the bulk particles. The temperature-dependent magnetization curves of the nanoparticles reveal blocking temperatures from 110 to 250 K, depending on stoichiometry. The magnetic anisotropy constant K1 of disordered YCo5 nanoparticles of 7.8 nm in size is 3.5×106ergs/cm3, higher than those of the disordered YCo …
Boron Carbide Based Solid State Neutron Detectors: The Effects Of Bias And Time Constant On Detection Efficiency, Nina Hong, John Mullins, Keith Foreman, Shireen Adenwalla
Boron Carbide Based Solid State Neutron Detectors: The Effects Of Bias And Time Constant On Detection Efficiency, Nina Hong, John Mullins, Keith Foreman, Shireen Adenwalla
Shireen Adenwalla Papers
Neutron detection in thick boron carbide(BC)/n-type Si heterojunction diodes shows a threefold increase in efficiency with applied bias and longer time constants. The improved efficiencies resulting from long time constants have been conclusively linked to the much longer charge collection times in the BC layer. Neutron detection signals from both the p-type BC layer and the n-type Si side of the heterojunction diode are observed, with comparable efficiencies. Collectively, these provide strong evidence that the semiconducting BC layer plays an active role in neutron detection, both in neutron capture and in charge generation and collection.
Optical Properties Of Quasi-Tetragonal Bifeo3 Thin Films, P. Chen, N. J. Podraza, X. S. Xu, A. Melville, E. Vlahos, V. Gopalan, R. Ramesh, D. G. Schlom, J. L. Musfeldt
Optical Properties Of Quasi-Tetragonal Bifeo3 Thin Films, P. Chen, N. J. Podraza, X. S. Xu, A. Melville, E. Vlahos, V. Gopalan, R. Ramesh, D. G. Schlom, J. L. Musfeldt
Xiaoshan Xu Papers
Optical transmission spectroscopy and spectroscopic ellipsometry were used to extract the optical properties of an epitaxially grown quasi-tetragonal BiFeO3 thin film in the near infrared to near ultraviolet range. The absorption spectrum is overall blue shifted compared with that of rhombohedral BiFeO3, with an absorption onset near 2.25 eV, a direct 3.1 eV band gap, and charge transfer excitations that are ~0.4 eV higher than those of the rhombohedral counterpart. We interpret these results in terms of structural strain and local symmetry breaking.
Robust Isothermal Electric Control Of Exchange Bias At Room Temperature, Xi He, Ning Wu, Anthony N. Caruso, Elio Vescovo, Kirill D. Belashchenko, Peter A. Dowben, Christian Binek
Robust Isothermal Electric Control Of Exchange Bias At Room Temperature, Xi He, Ning Wu, Anthony N. Caruso, Elio Vescovo, Kirill D. Belashchenko, Peter A. Dowben, Christian Binek
Kirill Belashchenko Publications
Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with highspeed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr2O3 has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr2O3 single crystal, we achieve reversible, room-temperature isothermal switching …
Deposition Of High-Quality Hfo2 On Graphene And The Effect Of Remote Oxide Phonon Scattering, K. Zou, X. Hong, D. Keefer, J. Zhu
Deposition Of High-Quality Hfo2 On Graphene And The Effect Of Remote Oxide Phonon Scattering, K. Zou, X. Hong, D. Keefer, J. Zhu
Xia Hong Publications
We demonstrate atomic layer deposition of high-quality dielectric HfO2 films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO2-covered graphene samples reaches 20 000 cm2/Vs at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO2 substrate and the HfO2 overlayer are isolated. At 300 K, surface phonon modes of the HfO2 film centered at 54 meV limit the mobility to approximately 20 000 cm2/Vs.
Unusual Resistance Hysteresis In N-Layer Graphene Field Effect Transistors Fabricated On Ferroelectric Pb(Zr0.2Ti0.8)O3, X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, J. Zhu
Unusual Resistance Hysteresis In N-Layer Graphene Field Effect Transistors Fabricated On Ferroelectric Pb(Zr0.2Ti0.8)O3, X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, J. Zhu
Xia Hong Publications
We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50–110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at …
Lattice Dynamical Probe Of Charge Order And Antipolar Bilayer Stacking In Lufe2o4, X. S. Xu, J. De Groot, Q.-C. Sun, B. C. Sales, D. Mandrus, M. Angst, A. P. Litvinchuk, J. L. Musfeldt
Lattice Dynamical Probe Of Charge Order And Antipolar Bilayer Stacking In Lufe2o4, X. S. Xu, J. De Groot, Q.-C. Sun, B. C. Sales, D. Mandrus, M. Angst, A. P. Litvinchuk, J. L. Musfeldt
Xiaoshan Xu Papers
We investigated the infrared response of LuFe2O4 through the series of charge, magnetic, and structural transitions. All vibrational modes couple strongly to the charge order, whereas the LuO zone-folding modes are also sensitive to magnetic order and structural distortion. The dramatic splitting of the LuO2 layer mode is attributed to charge-rich/poor proximity effects and its temperature dependence reveals the antipolar nature of the W layer pattern.
Tunable Band Gap In Bi(Fe1−Xmnx)O3 Films, X. S. Xu, J. F. Ihlefeld, J. H. Lee, O. K. Ezekoye, E. Vlahos, R. Ramesh, V. Gopalan, X. Q. Pan, D. G. Schlom, J. L. Musfeldt
Tunable Band Gap In Bi(Fe1−Xmnx)O3 Films, X. S. Xu, J. F. Ihlefeld, J. H. Lee, O. K. Ezekoye, E. Vlahos, R. Ramesh, V. Gopalan, X. Q. Pan, D. G. Schlom, J. L. Musfeldt
Xiaoshan Xu Papers
In order to investigate band gap tunability in polar oxides, we measured the optical properties of a series of Bi(Fe1−xMnx)O3 thin films. The absorption response of the mixed metal solid solutions is approximately a linear combination of the characteristics of the two end members, a result that demonstrates straightforward band gap tunability in this system.
Magnetodielectric Coupling Of Infrared Phonons In Single-Crystal Cu2oseo3, K. H. Miller, X. S. Xu, H. Berger, E. S. Knowles, D. J. Arenas, M. W. Meisel, D. B. Tanner
Magnetodielectric Coupling Of Infrared Phonons In Single-Crystal Cu2oseo3, K. H. Miller, X. S. Xu, H. Berger, E. S. Knowles, D. J. Arenas, M. W. Meisel, D. B. Tanner
Xiaoshan Xu Papers
Reflection and transmission as a function of temperature (5–300 K) have been measured on a single crystal of the magnetoelectric ferrimagnetic compound Cu2OSeO3 utilizing light spanning the far infrared to the visible portions of the electromagnetic spectrum. The complex dielectric function and optical properties were obtained via Kramers-Kronig analysis and by fits to a Drude-Lortentz model. The fits of the infrared phonons show a magnetodielectric effect near the transition temperature (Tc~60 K). Assignments to strong far-infrared phonon modes have been made, especially those exhibiting anomalous behavior around the transition temperature.
Adsorption-Controlled Growth Of Bimno3 Films By Molecular-Beam Epitaxy, J. H. Lee, X. Ke, R. Misra, J. F. Ihlefeld, X. S. Xu, Z. G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z. K. Liu, J. L. Musfeldt, P. Schiffer, D. G. Schlom
Adsorption-Controlled Growth Of Bimno3 Films By Molecular-Beam Epitaxy, J. H. Lee, X. Ke, R. Misra, J. F. Ihlefeld, X. S. Xu, Z. G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z. K. Liu, J. L. Musfeldt, P. Schiffer, D. G. Schlom
Xiaoshan Xu Papers
We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with w rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 …
Dynamical Theory Calculations Of Spin-Echo Resolved Grazing-Incidence Scattering From A Diffraction Grating, Rana Ashkar, P. Stonaha, A. L. Washington, V. R. Shah, M. R. Fitzsimmons, B. Maranville, C. F. Majkrzak, W. T. Lee, W. L. Schaich, Roger Pynn
Dynamical Theory Calculations Of Spin-Echo Resolved Grazing-Incidence Scattering From A Diffraction Grating, Rana Ashkar, P. Stonaha, A. L. Washington, V. R. Shah, M. R. Fitzsimmons, B. Maranville, C. F. Majkrzak, W. T. Lee, W. L. Schaich, Roger Pynn
Nebraska Center for Materials and Nanoscience: Faculty Publications
Neutrons scattered or reflected from a diffraction grating are subject to a periodic potential analogous to the potential experienced by electrons within a crystal. Hence, the wavefunction of the neutrons can be expanded in terms of Bloch waves and a dynamical theory can be applied to interpret the scattering phenomenon. In this paper, a dynamical theory is used to calculate the results of neutron spin-echo resolved grazing-incidence scattering (SERGIS) from a silicon diffraction grating with a rectangular profile. The calculations are compared with SERGIS measurements made on the same grating at two neutron sources: a pulsed source and a continuous …
Optical Properties And Magnetochromism In Multiferroic Bifeo3, X. S. Xu, T. V. Brinzari, S. Lee, Y. H. Chu, L. W. Martin, A. Kumar, S. Mcgill, R. C. Rai, R. Ramesh, V. Gopalan, S. W. Cheong, J. L. Musfeldt
Optical Properties And Magnetochromism In Multiferroic Bifeo3, X. S. Xu, T. V. Brinzari, S. Lee, Y. H. Chu, L. W. Martin, A. Kumar, S. Mcgill, R. C. Rai, R. Ramesh, V. Gopalan, S. W. Cheong, J. L. Musfeldt
Xiaoshan Xu Papers
In order to investigate spin-charge coupling in multiferroic oxides, we measured the optical properties of BiFeO3. Although the direct 300 K charge gap is observed at 2.67 eV, absorption onset actually occurs at much lower energy with Fe3+ excitations at 1.41 and 1.90 eV. Temperature and magnetic-field-induced spectral changes reveal complex interactions between on-site crystal-field and magnetic excitations in the form of magnon sidebands. We employ the sensitivity of these magnon sidebands to map out the magnetic-fieldtemperature phase diagram which demonstrates optical evidence for spin spiral quenching above 20 T and suggests a spin domain reorientation near …
Magnon Sidebands And Spin-Charge Coupling In Bismuth Ferrite Probed By Nonlinear Optical Spectroscopy, M. O. Ramirez, A. Kumar, S. A. Denev, N. J. Podraza, X. S. Xu, R. C. Rai, Y. H. Chu, J. Seidel, L. W. Martin, S. -Y. Yang, E. Saiz, J. F. Ihlefeld, S. Lee, J. Klug, S. W. Cheong, M. J. Bedzyk, O. Auciello, D. G. Schlom, R. Ramesh, J. Orenstein, J. L. Musfeldt, V. Gopalan
Magnon Sidebands And Spin-Charge Coupling In Bismuth Ferrite Probed By Nonlinear Optical Spectroscopy, M. O. Ramirez, A. Kumar, S. A. Denev, N. J. Podraza, X. S. Xu, R. C. Rai, Y. H. Chu, J. Seidel, L. W. Martin, S. -Y. Yang, E. Saiz, J. F. Ihlefeld, S. Lee, J. Klug, S. W. Cheong, M. J. Bedzyk, O. Auciello, D. G. Schlom, R. Ramesh, J. Orenstein, J. L. Musfeldt, V. Gopalan
Xiaoshan Xu Papers
The interplay between spin waves (magnons) and electronic structure in materials leads to the creation of additional bands associated with electronic energy levels which are called magnon sidebands. The large difference in the energy scales between magnons (meV) and electronic levels (eV) makes this direct interaction weak and hence makes magnon sidebands difficult to probe. Linear light absorption and scattering techniques at low temperatures are traditionally used to probe these sidebands. Here we show that optical secondharmonic generation, as the lowest-order nonlinear process, can successfully probe the magnon sidebands at room temperature and up to 723 K in bismuth ferrite, …
Anisotropic Magnetoresistance And Planar Hall Effect In Epitaxial Films Of La0.7Ca0.3Mno3, N. Naftalis, Y. Bason, J. Hoffman, X. Hong, C. H. Ahn, L. Klein
Anisotropic Magnetoresistance And Planar Hall Effect In Epitaxial Films Of La0.7Ca0.3Mno3, N. Naftalis, Y. Bason, J. Hoffman, X. Hong, C. H. Ahn, L. Klein
Xia Hong Publications
We measured the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in a [001] oriented epitaxial thin film of La0.7Ca0.3MnO3 (LCMO) as a function of magnetic field, temperature, and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO depend strongly on the current orientation relative to the crystal axes, and we demonstrate the applicability of AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with the film symmetry.
High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated On Epitaxial Ferroelectric Gate Oxides, X. Hong, A. Posadas, K. Zou, C. H. Ahn, J. Zhu
High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated On Epitaxial Ferroelectric Gate Oxides, X. Hong, A. Posadas, K. Zou, C. H. Ahn, J. Zhu
Xia Hong Publications
The carrier mobility μ of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0:8)O3 (PZT). In the electron-only regime of the FLG, μ reaches 7 X 104 cm2 / Vs at 300 K for n = 2.4 X 1012=cm2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4 X 105 cm2 / Vs at low temperature. The temperature-dependent resistivity p(T) reveals a clear signature of LA phonon scattering, yielding …
Quantum Scattering Time And Its Implications On Scattering Sources In Graphene, X. Hong, K. Zou, J. Zhu
Quantum Scattering Time And Its Implications On Scattering Sources In Graphene, X. Hong, K. Zou, J. Zhu
Xia Hong Publications
We determine the quantum scattering time Tq in six graphene samples with mobility of 4 400<μ <17 000 cm2 /V s over a wide range of carrier density (1.2<n<6X1012/cm2). Tq derived from Shubnikov–de Haas oscillation ranges ~25–74 fs, corresponding to a single-particle level broadening of 4.5–13 meV. The ratio of the transport to quantum scattering time Tt /Tq spans 1.5–5.1 in these samples, which can be quantitatively understood combining scattering from short-ranged centers and charged impurities located within 2 nm of the graphene sheet. Our results suggest that charges residing on the SiO …
Absence Of Spin Liquid Behavior In Nd3ga5sio14 Using Magneto-Optical Spectroscopy, X. S. Xu, T. V. Brinzari, S. Mcgill, H. D. Zhou, C. R. Wiebe, J. L. Musfeldt
Absence Of Spin Liquid Behavior In Nd3ga5sio14 Using Magneto-Optical Spectroscopy, X. S. Xu, T. V. Brinzari, S. Mcgill, H. D. Zhou, C. R. Wiebe, J. L. Musfeldt
Xiaoshan Xu Papers
We measured the low-lying crystal field levels of Nd3+ in Nd3Ga5SiO14 via magneto-optical spectroscopy and employed the extracted energies, magnetic moments, and symmetries to analyze the magnetic properties and test the spin liquid candidacy of this material. The exchange interaction is surprisingly small, a discovery that places severe constraints on models used to describe the ground state of this system. Further, it demonstrates the value of local-probe photophysical techniques for rare-earthcontaining materials where bulk property measurements can be skewed by low-lying electronic structure.
Photoconductivity In Bifeo3 Thin Films, S. R. Basu, L. W. Martin, Y. H. Chu, M. Gajek, R. Ramesh, R. C. Rai, X. S. Xu, J. L. Musfeldt
Photoconductivity In Bifeo3 Thin Films, S. R. Basu, L. W. Martin, Y. H. Chu, M. Gajek, R. Ramesh, R. C. Rai, X. S. Xu, J. L. Musfeldt
Xiaoshan Xu Papers
The optical properties of epitaxial BiFeO3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17 eV, a direct gap (2.667±0.005 eV at 300 K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFeO3 films under illumination from a 100 mW/cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1 Torr. Large increases in photoconductivity are observed in light.
Optical Band Gap Of Bifeo3 Grown By Molecular-Beam Epitaxy, J. F. Ihlefeld, N. J. Podraza, Z. K. Liu, R. C. Rai, X. Xu, T. Heeg, Y. B. Chen, J. Li, R. W. Collins, J. L. Musfeldt, X. Q. Pan, J. Schubert, R. Ramesh, D. G. Schlom
Optical Band Gap Of Bifeo3 Grown By Molecular-Beam Epitaxy, J. F. Ihlefeld, N. J. Podraza, Z. K. Liu, R. C. Rai, X. Xu, T. Heeg, Y. B. Chen, J. Li, R. W. Collins, J. L. Musfeldt, X. Q. Pan, J. Schubert, R. Ramesh, D. G. Schlom
Xiaoshan Xu Papers
BiFeO3 thin films have been deposited on (001) SrTiO3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with w rocking curve full width at half maximum values as narrow as 29 arc sec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO3 films.
Charge Order, Dynamics, And Magnetostructural Transition In Multiferroic Lufe2o4, X. S. Xu, M. Angst, T. V. Brinzari, R. P. Hermann, J. L. Musfeldt, A. D. Christianson, D. Mandrus, B. C. Sales, S. Mcgill, J. -W. Kim, Z. Islam
Charge Order, Dynamics, And Magnetostructural Transition In Multiferroic Lufe2o4, X. S. Xu, M. Angst, T. V. Brinzari, R. P. Hermann, J. L. Musfeldt, A. D. Christianson, D. Mandrus, B. C. Sales, S. Mcgill, J. -W. Kim, Z. Islam
Xiaoshan Xu Papers
We investigated the series of temperature and field-driven transitions in LuFe2O4 by optical and Mossbauer spectroscopies, magnetization, and x-ray scattering in order to understand the interplay between charge, structure, and magnetism in this multiferroic material. We demonstrate that charge fluctuation has an onset well below the charge ordering transition, supporting the ‘‘order by fluctuation’’ mechanism for the development of charge order superstructure. Bragg splitting and large magneto-optical contrast suggest a low-temperature monoclinic distortion that can be driven by both temperature and magnetic field.
Anisotropic Magnetoresistance In Colossal Magnetoresistive La1−XsrXMno3 Thin Films, Jeng-Bang Yau, X. Hong, A. Posadas, C. H. Ahn, W. Gao, E. Altman, Y. Bason, L. Klein, M. Sidorov, Z. Krivokapic
Anisotropic Magnetoresistance In Colossal Magnetoresistive La1−XsrXMno3 Thin Films, Jeng-Bang Yau, X. Hong, A. Posadas, C. H. Ahn, W. Gao, E. Altman, Y. Bason, L. Klein, M. Sidorov, Z. Krivokapic
Xia Hong Publications
We report on magnetic field and temperature-dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1−xSrxMnO3 (LSMO) thin films. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases the AMR, we find that in LSMO films the AMR dependence on magnetization displays nonmonotonic behavior which becomes particularly pronounced in lightly doped compounds. We believe that this behavior is related to the inhomogeneity exhibited by these materials.
Planar Hall Effect In Epitaxial Thin Films Of Magnetite, Y. Bason, L. Klein, H. Q. Wang, J. Hoffman, X. Hong, V. E. Henrich, C. H. Ahn
Planar Hall Effect In Epitaxial Thin Films Of Magnetite, Y. Bason, L. Klein, H. Q. Wang, J. Hoffman, X. Hong, V. E. Henrich, C. H. Ahn
Xia Hong Publications
We measured the planar Hall effect (PHE) of magnetite (Fe3O4) films between 150 and 350 K. The PHE was measured both with a constant magnetic field rotating in the plane of the sample and in a remanent state after applying a field in specific directions. The PHE amplitude decreases with temperature; however, it changes little between 300 and 350 K. The remanent PHE signal is as high as 10 V/A, larger than previously observed in manganite films. We also measured the PHE in the remanent state and found that its magnitude and stability make it a …
Magnetic Enhancement In Cobalt-Manganese Alloy Clusters, Shuangye Yin, Ramiro Moro, Xiaoshan Xu, Walter A. De Heer
Magnetic Enhancement In Cobalt-Manganese Alloy Clusters, Shuangye Yin, Ramiro Moro, Xiaoshan Xu, Walter A. De Heer
Xiaoshan Xu Papers
Magnetic moments of CoNMnM and CoNVM clusters (N ≤ 60; M ≤ N/3) are measured in molecular beams using the Stern-Gerlach deflection method. Surprisingly, the per atom average moments of CoNMnM clusters are found to increase with Mn concentration, in contrast to bulk CoMn. The enhancement with Mn doping is found to be independent of cluster size and composition in the size range studied. Meanwhile, CoNVM clusters show reduction of average moments with increasing V doping, consistent with what is expected in bulk CoV. The results are …
Planar Hall-Effect Magnetic Random Access Memory, Y. Bason, L. Klein, J.-B. Yau, X. Hong, J. Hoffman, C. H. Ahn
Planar Hall-Effect Magnetic Random Access Memory, Y. Bason, L. Klein, J.-B. Yau, X. Hong, J. Hoffman, C. H. Ahn
Xia Hong Publications
We suggest a type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than the currently developed MRAM that is based on magnetoresistance tunnel junctions, with the tunnel junction structure being replaced by a single-layer film.
Ferromagnetism And Structure Of Epitaxial Cr-Doped Anatase Tio2 Thin Films, T. C. Kaspar, T. Droubay, V. Shutthanandan, S. M. Heald, C. M. Wang, D. E. Mccready, S. Thevuthasan, J. D. Bryan, D. R. Gamelin, A. J. Kellock, M. F. Toney, X. Hong, C. H. Ahn, S. A. Chambers
Ferromagnetism And Structure Of Epitaxial Cr-Doped Anatase Tio2 Thin Films, T. C. Kaspar, T. Droubay, V. Shutthanandan, S. M. Heald, C. M. Wang, D. E. Mccready, S. Thevuthasan, J. D. Bryan, D. R. Gamelin, A. J. Kellock, M. F. Toney, X. Hong, C. H. Ahn, S. A. Chambers
Xia Hong Publications
The materials and magnetic properties of Cr-doped anatase TiO2 thin films deposited on LaAlO3(001) and SrTiO3(001) substrates by oxygen-plasma-assisted molecular beam epitaxy have been studied in detail to elucidate the origin of ferromagnetic ordering. Cr substitution for Ti in the anatase lattice, with no evidence of Cr interstitials, segregation, or secondary phases, was independently confirmed by transmission electron microscopy with energy dispersive x-ray spectroscopy, extended x-ray absorption fine structure, and Rutherford backscattering spectrometry in the channeling geometry. Epitaxial films deposited at ~0.1 Å/ s were found to have a highly defected crystalline structure, as quantified …
Effect Of Electric Field Doping On The Anisotropic Magnetoresistance In Doped Manganites, X. Hong, J.-B. Yau, J. D. Hoffman, C. H. Ahn
Effect Of Electric Field Doping On The Anisotropic Magnetoresistance In Doped Manganites, X. Hong, J.-B. Yau, J. D. Hoffman, C. H. Ahn
Xia Hong Publications
We have modulated the anisotropic magnetoresistance (AMR) in 3–4 nm manganite films using the ferroelectric field effect—a method that electrostatically varies the carrier density without affecting the lattice distortion. While significant changes have been induced in TC and p, the AMR ratio remains the same when the magnetic state is not changed. This scaling behavior is in striking contrast to chemical doping results, where similar modulation of the carrier concentration (~0.1/Mn) changes the AMR ratio by ≥30%. The results reveal unambiguously the dominant role of chemical distortion in determining the AMR in manganites.