Engineering Physics Commons^™

High Pressure Radio-Frequency Microhollow Cathode Discharges, Anja Annett Muller

Electrical & Computer Engineering Theses & Dissertations

A new field of microhollow cathode discharges is represented by the RF microhollow cathode discharge. So far, the behavior and related physical processes of the RF microhollow cathode discharge are not well investigated.

RF microhollow discharges in air at high pressures were investigated under different experimental conditions. The geometry was changed by reducing the cathode hole diameter and the dielectric spacer thickness. By adding a noble gas to air, the influence of additive gases was explored. Additionally, the parallel operation of RF microhollow discharges was investigated.

It was shown that stable RF microhollow cathode discharges could only be sustained up …

Coupled Electrodynamic-Monte Carlo Simulations Of Nanoscale Gaas Terahertz Optical Mixers, Jiang Li

Electrical & Computer Engineering Theses & Dissertations

The concept of mixing or heterodyning has traditionally been used for microwaves and for radio frequency communications. However, the concept can easily be extended into the optical frequency regime. By doing so, the photomixing process can serve as a very versatile tool for both the generation of ultrahigh frequency (terahertz) and the detection of weak optical signals.

The aim of this thesis is to perform a theoretical study of the photomixing process inside GaAs devices as the non-linear elements. A coupled approach which combines the Monte Carlo simulation scheme for the carrier transport, with Maxwell's equation for the electrodynamics, has …

Electron Beam Emission From A Ferroelectric Cathode, Crystal Briana Garland

Electrical & Computer Engineering Theses & Dissertations

The electron beam emission from a LTZ-2 (lead titanate-zirconate) ferroelectric cathode was characterized. The purpose was to determine the operation range for this type of electron emitter. The experimental apparatus consisted of a high voltage driving circuit with a charging voltage up to 30kV. A solid-state SCR switch is used to generate the high voltage pulse which induces a polarization change. Current densities on the order of 80A/cm² 30kV were achieved. The electron beam profile is Guassian. At long anode-cathode distances the measured current densities were found to be above Child-Langmuir space charge limits. The large current densities and …

Frequency Response Enhancement Of A Flow Sensor Using Diamond Thin Films Synthesized By Plasma Cvd, John Curren Hagwood

Electrical & Computer Engineering Theses & Dissertations

Theoretical modeling conducted previously in our Microelectronics Laboratory has shown that a layer of diamond film inserted between a metal film and a substrate will enhance the frequency response of a conventional thin film flow sensor. This thesis involved fabricating and testing a conventional thin film sensor of nickel on quartz (Ni/Q) and a diamond enhanced sensor (Ni/D/Q) for comparative frequency response analysis to validate the theory. Diamond films were grown onto quartz substrates using a microwave plasma enhanced chemical vapor deposition process. Conditions were established to synthesize continuous diamond films on quartz substrates. These films were characterized by scanning …

Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce

Bioelectrics Publications

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low‐energy phototransistor application for …

Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal

Faculty Publications

No abstract provided.

Absorption Imaging Studies On Intrinsic Gaas, John Samuel Kenney

Electrical & Computer Engineering Theses & Dissertations

A diagnostic technique has been developed which allows recording of the temporal and spatial development of electric field structures in GaAs photoconductive switches. The optical method is based on the Franz-Keldysh effect. Measurements were performed with a Nd:YAG activation laser and a GaAs laser diode as the probe laser. At low applied voltages a 100 atm wide region of high electric field is seen at the cathode only. With increasing voltage strong domain like structures emerge at the anode also. A calibration measurement shows that the electric fields in these domains are well above 50 kV/cm. At a threshold voltage, …

The Effect Of Contacts On The Performance Of Electron-Beam Controlled Gaas And Diamond Switches, Michael Kevin Kennedy

Electrical & Computer Engineering Theses & Dissertations

The performance of GaAs and diamond as electron-beam controlled closing and opening switches has been studied. An emphasis has been placed on the effect of contacts on the current-voltage characteristics. The two materials studied were GaAs and diamond. Using the same semi-insulating GaAs wafer as a source of material, a bulk device and a p-i-n device have been fabricated and compared. The asymmetry of the pin diode allows operation at higher voltage because of the ability to suppress the lock-on effect. Whereas GaAs was ionized through cathodoluminescence; diamond, in the form of thin films, has been directly ionized by the …

Deep Level Characterization Studies In Gaas, Gordhan R. Barevadia

Electrical & Computer Engineering Theses & Dissertations

The goal of this research was to investigate deep levels in different types of GaAs, a material for high power optically controlled bulk semiconductor switches. For low resistivity semiconductors, such as silicon doped GaAs material (p =0.054 Ω cm), deep level transient spectroscopy (DLTS) was used to characterize deep levels. Three deep levels (EL6, EL3, and EL2) have been detected in this material. For high resistivity semiconductors (p > 10⁴ Ω cm), difficulty of electrical carrier injection and of making a junction does not permit the use of DLTS technique. Therefore, an experimental set-up of the photo-induced current transient spectroscopy …

A Plasma Focus Interrupting Switch, Gregory Francis Knapp

Electrical & Computer Engineering Theses & Dissertations

The feasibility of using a dense plasma focus (DPF) as a current interrupting device has been investigated. Specifically, a 34-kJ, Mather-type DPF was modified to accept a third electrode so that a discharge could be created between this electrode and the center electrode of the DPF by a 10-kJ inductive energy storage circuit. It was anticipated that the accelerating mechanisms of the DPF pinch, which are known to cause a rapid reduction in the DPF current, would interrupt the 1-kA to 10-kA secondary discharge current thus forcing the secondary current through an external load and hence result in power amplification. …