Condensed Matter Physics Commons^™

Polarization-Coupled Transport Behavior In Ultrathin Ferroelectric Heterostructures, Haidong Lu

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

Ferroelectric polarization-coupled resistive switching behavior in ferroelectric tunnel junctions (FTJs), the tunneling electroresistance (TER) effect, is a recently predicted new phenomenon, which attracts interest due to potential application in the next generation non-volatile ferroelectric random access memories (FeRAMs). In this dissertation, we demonstrate the TER effect in FTJ devices by means of scanning probe microscopy (SPM) techniques. We have investigated several device configurations for enhancement of polarization stability and for demonstration of the resistive switching behavior: (i) using the SPM probe as a top electrode; (ii) using heterostructures with engineered interfacial atomic terminations; (iii) using metal electrodes; (iv) adding an …