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Full-Text Articles in Condensed Matter Physics
Synthesis, Characterization, And Electronic Properties Of Novel 2d Materials : Transition Metal Dichalcogenides And Phosphorene., George Anderson
Synthesis, Characterization, And Electronic Properties Of Novel 2d Materials : Transition Metal Dichalcogenides And Phosphorene., George Anderson
Electronic Theses and Dissertations
Scaling electronic devices has become paramount. The current work builds upon scaling efforts by developing novel synthesis methods and next generation sensing devices based on 2D materials. A new combination method utilizing thermal evaporation and chemical vapor deposition was developed and analyzed to show the possibilities of Transition Metal Dichalcogenide monolayers and heterostructures. The materials produced from the above process showed high degrees of compositional control in both spatial dimensions and chemical structure. Characterization shows controlled fabrication of heterostructures, which may pave the way for future band gap engineering possibilities. In addition, Phosphorene based field effect transistors, photodetectors, and gas …
Carbon Nitride And Conjugated Polymer Composite Materials, Josh Byers
Carbon Nitride And Conjugated Polymer Composite Materials, Josh Byers
Electronic Thesis and Dissertation Repository
The semiconductor and photovoltaic properties of carbon nitride (CNx) thin films prepared using a reactive magnetron sputtering technique were investigated both individually and as composites with the organic conjugated polymers polybithiophene (PBT) and poly(3-hextlthiophene) (P3HT). At low nitrogen content, the film structure was dominated by graphitic sp2 percolation networks, whereas at higher nitrogen contents CNx films started to demonstrate semiconductor properties, as evidenced by the occurrence of photoconductivity and the development of a space charge region. When CNx was deposited onto a PBT substrate, it was found to function as an acceptor material improving the photocurrent generation both in …
The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride
The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride
Master's Theses
Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and drift during …