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Condensed Matter Physics Commons™

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Semiconductor and Optical Materials

Selected Works

Articles 1 - 4 of 4

Full-Text Articles in Condensed Matter Physics

Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties And Applications, Urcan Guler, Sergey Suslov, Alexander V. Kildishev, Alexandra Boltasseva, Vladimir M. Shalaev Dec 2014

Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties And Applications, Urcan Guler, Sergey Suslov, Alexander V. Kildishev, Alexandra Boltasseva, Vladimir M. Shalaev

U. Guler

Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm, which was found to be the optimum size for cellular uptake with gold nanoparticles [1], exhibit plasmon resonance in the biological transparency window and demonstrate a high absorption efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization. The titanium oxide shell surrounding the plasmonic core can create new opportunities …

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Tuning Of Magnetization In Vertical Graphenes By Plasma-Enabled Chemical Conversion Of Organic Precursors With Different Oxygen Content, Zengji Yue Dec 2012

Tuning Of Magnetization In Vertical Graphenes By Plasma-Enabled Chemical Conversion Of Organic Precursors With Different Oxygen Content, Zengji Yue

Zengji Yue

Different magnetization in vertical graphenes fabricated by plasma-enabled chemical conversion of organic precursors with various oxygen atom contents and bonding energies was achieved. The graphenes grown from fat-like precursors exhibit magnetization up to 8 emu g−1, whereas the use of sugar-containing precursors results in much lower numbers. A relatively high Curie temperature exceeding 600 K was also demonstrated.

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Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen Jun 2012

Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen

Albert B Chen

Non-volatile random access memories (NVRAM) are promising data storage and processing devices. Various NVRAM, such as FeRAM and MRAM, have been studied in the past. But resistance switching random access memory (RRAM) has demonstrated the most potential for replacing flash memory in use today. In this dissertation, a novel RRAM material design that relies upon an electronic transition, rather than a phase change (as in chalcogenide Ovonic RRAM) or a structural change (such in oxide and halide filamentary RRAM), is investigated. Since the design is not limited to a single material but applicable to general combinations of metals and insulators, …

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Angular-Dependences Of Giant In-Plane And Interlayer Magnetoresistances In Bi2te3 Bulk Single Crystals, Zengji Yue Dec 2011

Angular-Dependences Of Giant In-Plane And Interlayer Magnetoresistances In Bi2te3 Bulk Single Crystals, Zengji Yue

Zengji Yue

Angular-dependences of in-plane and interlayer magnetotransport properties in n-type Bi2Te3 bulk single crystals have been investigated over a broad range of temperatures and magnetic fields. Giant in-plane magnetoresistances (MR) of up to 500% and interlayer MR of up to 200% were observed, respectively. The observed MR exhibits quadratic field dependences in low fields and linear field dependences in high fields. The angular dependences of the MR represent strong anisotropy and twofold oscillations. The observed angle-dependent, giant MR might result from the strong coulomb scattering of electrons as well as impurity scattering in the bulk conduction bands of n-type Bi2Te3. The …

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