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Molecular spintronics

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Full-Text Articles in Condensed Matter Physics

The Emergence Of The Local Moment Molecular Spin Transistor, Guanhua Hao, Ruihua Cheng, Peter Dowben Mar 2020

The Emergence Of The Local Moment Molecular Spin Transistor, Guanhua Hao, Ruihua Cheng, Peter Dowben

Peter Dowben Publications

Local moment molecular systems have now been used as the conduction channel in gated spintronics devices, and some of these three terminal devices might even be considered molecular spin transistors. In these systems, the gate voltage can be used to tune the molecular level alignment, while applied magnetic fields have an influence on the spin state, altering the magnetic properties, and providing insights to the magnetic anisotropy. More recently, the use of molecular spin crossover complexes, as the conduction channel, has led to devices that are both nonvolatile and have functionality at higher temperatures. Indeed, some devices have now been …


Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films, Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha T. N’Diaye, Peter Dowben, Ruihua Cheng Jan 2020

Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films, Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha T. N’Diaye, Peter Dowben, Ruihua Cheng

Peter Dowben Publications

Voltage-controlled nonvolatile isothermal spin state switching of a [Fe{H2B(pz)2}2(bipy)] (pz=tris(pyrazol-1-1y)-borohydride, bipy=2,2’-bipyridine) film, more than 40 to 50 molecular layers thick, is possible when it is adsorbed onto a molecular ferroelectric substrate. Accompanying this high spin and low spin state switching, at room temperature, we observe a remarkable change in conductance, thereby allowing not only non-volatile voltage control of the spin state (“write”), but also current sensing of the molecular spin state (“read”). Monte Carlo Ising model simulations of the high spin state occupancy, extracted from x-ray absorption spectroscopy, indicate that the energy difference between the low …