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Full-Text Articles in Condensed Matter Physics
Spin Density Waves In Periodically Strained Graphene Nanoribbons, Nabil M. Al-Aqtash, Renat F. Sabirianov
Spin Density Waves In Periodically Strained Graphene Nanoribbons, Nabil M. Al-Aqtash, Renat F. Sabirianov
Nebraska Center for Materials and Nanoscience: Faculty Publications
Zigzag graphene nanoribbons (ZGNRs) are antiferromagnetic in the ground state with zero net magnetization due to the compensation of contributions from opposite edges. Uniform deformations (both shear and axial) do not produce magnetization due to symmetry restrictions. However, we report the results of first-principles calculations that predict the induction of spin density waves (SDWs) in ZGNRs under non-uniform periodic strain. Using the density functional theory (DFT) method, we show that a sinusoidal magnetization variation along the axis of the ribbon occurs under a sinusoidal transversal shear strain. SDWs appear due to the presence of a strain gradient that induced asymmetry …
The Spin State Of A Molecular Adsorbate Driven By The Ferroelectric Substrate Polarization†, Xin Zhang, Tatiana Palamarciuc, Jean-François Létard, Patrick Rosa, Eduardo Vega Lozada, Fernand Torres, Luis G. Rosa, Bernard Doudin, Peter A. Dowben
The Spin State Of A Molecular Adsorbate Driven By The Ferroelectric Substrate Polarization†, Xin Zhang, Tatiana Palamarciuc, Jean-François Létard, Patrick Rosa, Eduardo Vega Lozada, Fernand Torres, Luis G. Rosa, Bernard Doudin, Peter A. Dowben
Peter Dowben Publications
The spin state of [Fe(H2B(pz)2)2(bipy)] thin films is mediated by changes in the electric field at the interface of organic ferroelectric polyvinylidene fluoride with trifluoroethylene (PVDF–TrFE). Signatures of the molecular crossover transition are evident in changes in the unoccupied states and the related shift from diamagnetic to paramagnetic characteristics. This may point the way to the molecular magneto-electric effect on devices.
Positive Exchange Bias In Epitaxial Permalloy/Mgo Integrated With Si (100), S. S. Rao, J. T. Prater, Fan Wu, S. Nori, D. Kumar, Lanping Yue, Sy_Hwang Liou, Jagdish Narayan
Positive Exchange Bias In Epitaxial Permalloy/Mgo Integrated With Si (100), S. S. Rao, J. T. Prater, Fan Wu, S. Nori, D. Kumar, Lanping Yue, Sy_Hwang Liou, Jagdish Narayan
Sy-Hwang Liou Publications
In magnetic random access memory (MRAM) devices, soft magnetic thin film elements such as permalloy (Py) are used as unit cells of information. The epitaxial integration of these elements with the technologically important substrate Si (100) and a thorough understanding of their magnetic properties are critical for CMOS-based magnetic devices. We report on the epitaxial growth of Ni82.5Fe17.5 (permalloy, Py) on Si (100) using a TiN/MgO buffer layer. Initial stages of growth are characterized by the formation of discrete islands that gradually merge into a continuous film as deposition times are extended. Interestingly, we find that the …