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Full-Text Articles in Condensed Matter Physics
Morphological Study Of Voids In Ultra-Large Models Of Amorphous Silicon, Durga Prasad Paudel
Morphological Study Of Voids In Ultra-Large Models Of Amorphous Silicon, Durga Prasad Paudel
Dissertations
The microstructure of voids in pure and hydrogen-rich amorphous silicon (a:Si) network was studied in ultra-large models of amorphous silicon, using classical and quantum- mechanical simulations, on the nanometer length scale. The nanostructure, particularly voids of device grade ultra-large models of a:Si was studied, in which observed three-dimensional realistic voids were extended using geometrical approach within the experimental limit of void-volume fractions. In device-grade simulated models, the effect of void morphology; size, shape, number density, and distribution on simulated scattering intensities in small- angle region were investigated. The evolution of voids on annealing below the crystallization temperature …
Extended-Range Oscillations And The First Sharp Diffraction Peak In Amorphous Silicon: A Systematic Study, Devilal Dahal
Extended-Range Oscillations And The First Sharp Diffraction Peak In Amorphous Silicon: A Systematic Study, Devilal Dahal
Master's Theses
The first sharp diffraction peak (FSDP), which characterizes the static structure factor of many glassy systems near the wave vector region of 1-2 Å-1 has been observed depending on the temperature, pressure and the degree of annealing of the system. The presence of the FSDP is indicative of the intermediate range order (IRO). In current work, we study the role of the extended- range oscillations on the parameters of the FSDP, i.e., intensity, position, area, and the full width at half maximum (FWHM) by using high-quality simulated models of amorphous silicon. The radial distance up to half of the …