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Thin films

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Full-Text Articles in Physics

Computational Study For The Structural Change Of The System Cdte_{1-X} S_X Thin Film, Emad Khdayer Al-Shakarchi Jan 2001

Computational Study For The Structural Change Of The System Cdte_{1-X} S_X Thin Film, Emad Khdayer Al-Shakarchi

Turkish Journal of Physics

Polycrystalline thin film of the graded system CdTe_{1-x}S_{x} for x=0,0.1,\ldots,1 are prepared by using thermal evaporation technique deposited on the glass substrate with an average thickness 3000 Å for each individual value of x . XRD technique is used with the aid of a computational program to study the phase change from cubic zinc blend structure to hexagonal wurtzite with an inversion point related to the x-value. It is found that x=0.1 gives us an inversion point in the structural change from cubic to hexagonal phase.

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Stability Of Self-Similar Solutions For Van Der Waals Driven Thin Film Rupture, Thomas P. Witelski, Andrew J. Bernoff Sep 1999

Stability Of Self-Similar Solutions For Van Der Waals Driven Thin Film Rupture, Thomas P. Witelski, Andrew J. Bernoff

All HMC Faculty Publications and Research

Recent studies of pinch-off of filaments and rupture in thin films have found infinite sets of first-type similarity solutions. Of these, the dynamically stable similarity solutions produce observable rupture behavior as localized, finite-time singularities in the models of the flow. In this letter we describe a systematic technique for calculating such solutions and determining their linear stability. For the problem of axisymmetric van der Waals driven rupture (recently studied by Zhang and Lister), we identify the unique stable similarity solution for point rupture of a thin film and an alternative mode of singularity formation corresponding to annular “ring rupture.”

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Characterization Of Spray Deposited Bismuth Oxide Thin Films From Non-Aqueous Medium, V.V. Killedar, C.H. Bhosale, C.D. Lokhande Jan 1998

Characterization Of Spray Deposited Bismuth Oxide Thin Films From Non-Aqueous Medium, V.V. Killedar, C.H. Bhosale, C.D. Lokhande

Turkish Journal of Physics

Bismuth oxide thin films have been prepared on amorphous glass substrates from non-aqueous medium using spray pyrolysis method. Characterization of the films was carried out with XRD, optical absorption, dark resistivity and thermoelectric power (TEP) measurements. These studies reveal that films as deposited are polycrystalline; having an optical band gap of 2.6 eV; electrical resistivity is of the order of $10^6$ ohm-cm; and electron carrier concentration and mobility are of the order of $3.8 \times 10^{19}$cm$^3$ and $1.5 \times 10^{-4}$cm$^2$ V$^{-1}$s$^{-1}$, respectively.

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Photoluminescence Properties Of Silicon Quantum-Well Layers, Peter N. Saeta, A. C. Gallagher Feb 1997

Photoluminescence Properties Of Silicon Quantum-Well Layers, Peter N. Saeta, A. C. Gallagher

All HMC Faculty Publications and Research

Nanometer-scale crystal silicon films surrounded by SiO2 were prepared by oxidizing silicon-on-insulator substrates prepared from SIMOX (separation by implantation of oxygen) and crystallized hydrogenated amorphous silicon films. Average silicon layer thickness was determined from reflection spectra. When sufficiently thin (<2 >nm), all layers emitted red photoluminescence under blue and UV cw excitation, with a spectrum that did not depend on the mean layer thickness. The spectrum was roughly Gaussian with a peak energy of 1.65 eV, which is lower than for most porous silicon spectra. The time scale for the luminescence decay was ~35 μs at room temperature and …

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Reflection High-Energy Electron-Diffraction Study Of Melting And Solidification Of Pb On Graphite, Z. H. Zhang, P. Kulatunga, H. E. Elsayed-Ali Jan 1997

Reflection High-Energy Electron-Diffraction Study Of Melting And Solidification Of Pb On Graphite, Z. H. Zhang, P. Kulatunga, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The melting and solidification of Pb thin films on pyrolytic graphite are investigated in situ by reflection high-energy electron diffraction. Thin films with thicknesses of 4-150 monolayers are investigated. The surface morphology of the thin films were studied by scanning electron microscopy. Superheating of the Pb thin films by 4±2 to 12±2 K is observed from diffraction intensity measurements. Upon cooling the substrate, the Pb on graphite is seen to supercool by ∼69±4 K.

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Design Of Gradient Index Optical Thin Films, Jeffrey J. Druessel Jun 1996

Design Of Gradient Index Optical Thin Films, Jeffrey J. Druessel

Theses and Dissertations

Gradient index thin films provide greater flexibility for the design of optical coatings than the more conventional 'layer' films. In addition, gradient index films have higher damage thresholds and better adhesion properties. This dissertation presents an enhancement to the existing inverse Fourier transform gradient index design method, and develops a new optimal design method for gradient index films using a generalized Fourier series approach. The inverse Fourier transform method is modified to include use of the phase of the index profile as a variable in rugate filter design. Use of an optimal phase function in Fourier-based filter designs reduces the …

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Summary Of The Workshop On The Applications Of X-Ray Standing Waves In Studies Of Surfaces, Fiims, And Buik Materiais, David R. Heskett, L. Berman Feb 1995

Summary Of The Workshop On The Applications Of X-Ray Standing Waves In Studies Of Surfaces, Fiims, And Buik Materiais, David R. Heskett, L. Berman

Physics Faculty Publications

Highlights of the satellite workshop on the technique of x-ray standing waves which preceded the 5th International Conference on Synchrotron Radiation Instrumentation held at the State University of New York at Stony Brook, USA are presented. At the workshop, many applications of the x-ray standing-wave technique were described in both invited and contributed talks. While the predominant use of the XSW technique was to analyze the structure of adsorbates on surfaces, applications in the characterization of thin films, interfaces, clean surfaces, and bulk materials were also presented. Most of the talks concentrated on experimental results, but some theory was also …

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Photoluminescence Study Of Gallium Arsenide, Aluminum Gallium Arsenide, And Gallium Antimonide Thin Films Grown By Metalorganic Chemical Vapor Deposition, John Mark Koons Jan 1994

Photoluminescence Study Of Gallium Arsenide, Aluminum Gallium Arsenide, And Gallium Antimonide Thin Films Grown By Metalorganic Chemical Vapor Deposition, John Mark Koons

Theses

The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give insight into sample quality. The four samples under this study were GaAs on a GaAs substrate, Al.25Ga.75As on a GaAs substrate, Al.30Ga.7OAs on a GaAs substrate, and GaSb on a GaSb substrate. Excitation was achieved through the use of the 514.0 nm line of an argon ion laser, and sample cooling was attained by use of a cryostat cooler using helium gas to attain a low temperature limit of 10°K. The GaAs and Al.30Ga.7O …

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Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal Jul 1993

Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal

Faculty Publications

No abstract provided.

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Design And Performance Evaluation Of A Gas Chromatograph Micromachined In A Single Crystal Silicon Substrate, Rocky R. Reston Mar 1993

Design And Performance Evaluation Of A Gas Chromatograph Micromachined In A Single Crystal Silicon Substrate, Rocky R. Reston

Theses and Dissertations

This investigation designed and developed a miniature gas chromatograph (GC) using silicon micromachining techniques. The GC is composed of a miniature sample injector (10 µl sample loop); a 0.9 m long, rectangular-shaped (300 µm width and 10 micrometers height) capillary column coated with a 0.2 µm thick copper phthalocyanine (CuPc) stationary phase; and a dual-detector scheme incorporating a CuPc-coated chemiresistor and a 125 µm diameter thermal conductivity detector bead. Micromachining was employed to fabricate the sample injector interface, the GC column, and the dual-detector cavity. A novel processing technique was developed to sublime the CuPc stationary phase coating on the …

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Optical Rectification At Semiconductor Surfaces, Shun Lien Chuang, Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, Anthony F. J. Levi Jan 1992

Optical Rectification At Semiconductor Surfaces, Shun Lien Chuang, Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, Anthony F. J. Levi

All HMC Faculty Publications and Research

We show that far-infrared radiation can be generated in the depletion field near semiconductor surfaces via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This mechanism is conceptually different from those previously proposed and accounts for many recent experimental observations.

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Silicon Carbide Thin Film Deposition By Reactive Ion-Beam Sputtering, Larry G. Sills Dec 1991

Silicon Carbide Thin Film Deposition By Reactive Ion-Beam Sputtering, Larry G. Sills

Theses and Dissertations

In this study, hydrogenated amorphous silicon carbide thin films were deposited by reactive ion-beam sputtering under varying conditions to determine whether a film's optical properties can be controlled, focusing on refractive index. Using a Kaufman type ion source to sputter a pure silicon target, three distinct series of films were grown. The first series varied the mixture of methane and argon used in the ion-beam. holding all other parameters constant. For the second series the gas mix was fixed, and only the beam energy (beam voltage) was varied. The final series also varied beam energy, but was grown with a …

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Ultrafast Electronic Disordering During Femtosecond Laser Melting Of Gaas, Peter N. Saeta, J.-K. Wang, Y. Siegal, N. Bloembergen, E. Mazur Aug 1991

Ultrafast Electronic Disordering During Femtosecond Laser Melting Of Gaas, Peter N. Saeta, J.-K. Wang, Y. Siegal, N. Bloembergen, E. Mazur

All HMC Faculty Publications and Research

We have observed an ultrarapid electronic phase transformation to a centrosymmetric electronic state during laser excitation of GaAs with intense femtosecond pulses. Reflection second-harmonic intensity from the upper 90 atomic layers vanishes within 100 fs; reflectivity rises within 0.5 ps to a steady value characteristic of a metallic molten phase, long before phonon emission can heat the lattice to the melting temperature.

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Determination Of The Optical Properties Of Organic Thin Films By Spectroscopic Ellipsometry, Mark L. Sward Dec 1990

Determination Of The Optical Properties Of Organic Thin Films By Spectroscopic Ellipsometry, Mark L. Sward

Theses and Dissertations

This thesis demonstrated the feasibility of determining the optical properties of organic and polymer thin films through the use of Spectroscopic Ellipsometry (SE). Tan Psi and cos Delta data from 300-800 nanometers (NM) were taken with a Rudolph Research s2000 spectroscopic ellipsometer four samples: indium tin oxide (ITO) coated glass; five layer poly-benzyl-L glutamate (PBLG) organic film on ITO coated glass; eight layer PBLG film on ITO coated glass; and a thiophene polymer film on a microscope slide. The data sets were fit to a choice of four computer models based on a paper written by Dwight Berreman in 1972. …

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Review Of Hall Effect And Magnetoresistance Measurements In Gaas Materials And Devices, David C. Look Jan 1990

Review Of Hall Effect And Magnetoresistance Measurements In Gaas Materials And Devices, David C. Look

Physics Faculty Publications

The use of magnetic fields in the electrical characterization of semiconductor materials is familiar to everyone in the form of Hall‐effect measurements. However, there is another magnetic‐field‐based phenomenon, magnetoresistance (MR), which is highly useful but not nearly so familiar to the majority of workers. One of the unique features of MR measurements is their applicability to common device structures, in particular, field‐effect transistors (FETs) and contact‐resistance patterns. We will show how channel mobility information can be extracted from the MR data in metal‐semiconductor FETs (MESFETs) and modulation‐doped heterostructure FETs (MODFETs), and also how the material under ohmic contacts can be …

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Intermetallic Reactions In Vacuum-Deposited Nickel And Gold Films On (111) Silicon Single Crystals, K. H. Yoon, Gordon Lewis, L. L. Levenson Apr 1976

Intermetallic Reactions In Vacuum-Deposited Nickel And Gold Films On (111) Silicon Single Crystals, K. H. Yoon, Gordon Lewis, L. L. Levenson

Materials Science and Engineering Faculty Research & Creative Works

Pure nickel and gold thin films were vacuum-deposited on (111) silicon single crystals. When Ni/Au/Si or Au/Ni/Si samples were heated to about 550° in situ, hexagonal or deformed hexagonal shaped crystallites were formed on the silicon substrates. The composition of these crystallites was determined by using x-ray diffraction, scanning electron microscopy and scanning Auger microprobe methods. The crystallites were identified as NiSi2. The crystal-lites on the (111) silicon plane parallel to the surface appeared as regular hexagons while the inclined crystal-lites resembled trapezia. The results of Auger spectra and in-depth composition profiles for Ni, Au, and Si showed that the …

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Cryogenic Thin-Film Electron Emitters, Pavel Smejtek, David G. Onn, M. Silver Jan 1974

Cryogenic Thin-Film Electron Emitters, Pavel Smejtek, David G. Onn, M. Silver

Physics Faculty Publications and Presentations

Thin‐film electron emitters are described, which operate below 200°K and below a limiting critical applied voltage (νc) in a stable temperature‐independent regime. Current‐voltage characteristics and normal electron energy distributions are presented. Fabrication and operation criteria are outlined. Comparison with temperature‐dependent emitters is made, and possible conduction mechanisms discussed briefly.

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New Thin-Film Tunnel Triode Using Amorphous Semiconductors, Pavel Smejtek, R. F. Shaw, H. Fritzsche, M. Silver, S. Holmberg, S. R. Ovshinsky Apr 1972

New Thin-Film Tunnel Triode Using Amorphous Semiconductors, Pavel Smejtek, R. F. Shaw, H. Fritzsche, M. Silver, S. Holmberg, S. R. Ovshinsky

Physics Faculty Publications and Presentations

A new thin‐film tunnel triode is discussed which uses a p‐type amorphous film to achieve amplification of injected current from a tunnel cathode. It is not only the basis for a new semiconductor device but also suggests a novel method for measuring electrical properties of semiconductors.

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