Physics Commons^™

Effects Of Interface Scattering And Carrier Localization On Conductance Of Cu-Based Superlattices, Jiyoon Jessica Kim

Legacy Theses & Dissertations (2009 - 2024)

Ultra-thin films and multilayer structures are widely used in modern technologies such as semiconductor logic and memory devices. As film thickness decreases to a few nanometers or smaller, classical transport theories are no longer valid. In this study, we investigate transport properties of superlattices with layer thickness reduced to ~1 nm. The superlattices are made of alternating layers of Cu and a transition metal (Ru, Mo, and Co). The layers are deposited by physical vapor deposition and resistance changes during superlattice growth are measured. The observed resistance evolution reveals the effects of carrier scattering and localization at the interfaces.

Carrier Scattering And Localization In Nm-Thick Al/Ru, Al/Co And Al/Mo Superlattices, Yanli Zhang

Legacy Theses & Dissertations (2009 - 2024)

Thin films and superlattices are widely used in modern technologies. Certain metal superlattices with layer thickness between 1 to 10 nm have interesting magneto transport properties and unique applications in spintronics and data storage. We have studied electrical conductance of Al/Ru, Al/Co, and Al/Mo superlattices with layer thickness between 1 to 2 nm. By monitoring the resistance change during the growth of the superlattice, we are able to observe directly the effects of carrier localization and scattering when a highly disordered interface is being deposited.

The Optical Emission And Absorption Properties Of Silicon-Germanium Superlattice Structures Grown On Non-Conventional Silicon Substrate Orientation, Theodore L. Kreifels

Theses and Dissertations

Optical emission and absorption properties of Si_1-x Ge_x/Si superlattices grown on (100), (110), and (111) Si substrates were investigated to determine the optimal growth conditions for these structures to be used as infrared detectors. Fully-strained Si_1-x Ge_x/Si superlattices were grown by molecular beam epitaxy MBE and examined using low-temperature photoluminescence PL to identify no-phonon and phonon-replica interband transitions across the alloy bandgap. Phonon-resolved emission was most intense for undoped quantum wells grown at 710°C for all three silicon orientations. Room temperature absorption measurements were conducted on (100) and (110) Si_1-x Ge_x/Si …

A Theoretical Model For Biased Superlattice Devices, Michael Ferner

Theses

A model describing the subband structures and tunneling characteristics of superlattices is presented. The model solves the envelope function equations by the transfer matrix technique. The results are codified in a Fortran program, and the model is applied to several structures.

Superlattice have been studied extensively, however many new structures await investigation.

This model is presented as a preliminary design tool. The program allows a designer to do preliminary calculations. This type of investigation guides a designer toward a goal by making possible a large number of calculations on many different structures.

A Theoretical Study Of The Subband Structures And Tunneling In Polytype Heterostructures, Hong Chen

Theses

A theoretical study of the electronic and optical properties in polytype heterostructures is presented in this thesis.

In the first part of the thesis (Chap. 2 and Chap. 3), an explicit expression for calculating the subband structure and tunneling is formulated by the incorporation of the envelope function approximations and the transfer matrix technique. It is based on the k*p theory as done to date, but contains two significant improvements: a more realistic treatment of the spatial and energetic dependance of effective masses and band edges; the availability of the calculations, in favor of direct numerical evaluation, to various quantum …

Low Temperature Photoluminescence Study Of Silicon-Germanium Alloy Superlattices, Maxwell M. Chi

Theses and Dissertations

Low temperature photoluminescence studies were performed on nine silicon germanium alloy superlattice samples. The luminescence spectra showed sharp peaks in the 0.95 to 1.05 eV energy range, and a broad band located 0.05 to 0.12 eV below the alloy bandgap. The sharp peaks were identified as transitions associated with impurity bound excitons. The linewidth was about 10 times that in pure silicon; in addition, the peaks shifted to lower energy as the sample temperature was raised from 1.4 to 15 K. These features were attributed to effects of random distribution of atoms in the alloy. The broad band shifted to …