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Articles 1 - 6 of 6
Full-Text Articles in Physics
Transient Effects In Solution-Processed Organic Thin Films, Jing Wan
Transient Effects In Solution-Processed Organic Thin Films, Jing Wan
Graduate College Dissertations and Theses
Due to the weak van der Waals forces between organic semiconductor molecules, the molecular packing depends sensitively on the processing methods and conditions. Thus, understanding the crystallization mechanisms during solution deposition are essential for fundamental studies and reproducible fabrication of electronic devices.The performance of Organic field effect transistors (OFETs) also depends heavily on extrinsic factors such as contact resistance and interfacial defects, which can produce a different kind of transient effect at the metal-semiconductor contact. We have observed structural transient effects during the crystallization process of two small molecule organic semiconductors made from solution. We report in situ X-ray scattering …
Laser-Assisted Nanowelding Of Graphene To Metals: An Optical Approach Toward Ultralow Contact Resistance, K. Keramatnejad, Yunshen Zhou, Da Wei Li, Hossein Rabiee Golgir, Xi Huang, Qi Ming Zhou, Jingfeng Song, Stephen Ducharme, Yongfeng Lu
Laser-Assisted Nanowelding Of Graphene To Metals: An Optical Approach Toward Ultralow Contact Resistance, K. Keramatnejad, Yunshen Zhou, Da Wei Li, Hossein Rabiee Golgir, Xi Huang, Qi Ming Zhou, Jingfeng Song, Stephen Ducharme, Yongfeng Lu
Stephen Ducharme Publications
The electrical performance of graphene-based devices is largely limited by substantial contact resistance at the heterodimensional graphene-metal junctions. A laserassisted nanowelding technique was developed to reduce graphene-metal (G-M) contact resistance and improve carrier injection in suspended graphene devices. Selective breakdown of C-C bonds and formation of structural defects were realized through laser irradiation at the edges of graphene within the G-M contact regions in order to increase the chemical reactivity of graphene, facilitate G-M bonding and, therefore, maximize interfacial carrier transportation. Through this method, significantly reduced G-M contact resistances, as low as 2.57 Ω-μm were obtained. In addition, it was …
Reproducible Nanostructure Fabrication Using Atomic Force Microscopy Indentation With Minimal Tip Damage, Seunghee Jeon, Bongwoo Ryu, Wonho Jhe, Zheong G. Khim, Byung I. Kim
Reproducible Nanostructure Fabrication Using Atomic Force Microscopy Indentation With Minimal Tip Damage, Seunghee Jeon, Bongwoo Ryu, Wonho Jhe, Zheong G. Khim, Byung I. Kim
Physics Faculty Publications and Presentations
A uniform pattern of quantum dots and nanowires were reproducibly fabricated by creating holes in a two-layer structure using atomic force microscopy (AFM) indentation, dry-etching of polymer resists, and metal deposition through the indentation holes. The two-layer structure was created by depositing a thin gold layer onto a polymethyl methacrylate (PMMA) layer on a silicon substrate. The indentation depth was set so that the AFM tip penetrated the thin gold layer without the tip contacting the silicon substrate. This two-layer indentation was used to create a pattern of holes in the thin gold layer. Then, the PMMA was exposed to …
Textured Mos 2 Thin Films Obtained On Tungsten: Electrical Properties Of The W/Mos 2 Contact, E. Gourmelon, J. C. Bernède, J. Pouzet, S. Marsillac
Textured Mos 2 Thin Films Obtained On Tungsten: Electrical Properties Of The W/Mos 2 Contact, E. Gourmelon, J. C. Bernède, J. Pouzet, S. Marsillac
Electrical & Computer Engineering Faculty Publications
Textured films of molybdenum disulfide have been obtained by solid state reaction between the constituents in thin films form when a (200) oriented tungsten sheet is used as substrate. The crystallites have their c axis perpendicular to the plane of the substrate. The annealing conditions are T=1073K and t=30 min. The films are stoichoimetric and p type. Such highly textured films are achieved without foreign atom addition (Ni, Co...). It appears, as shown by x-ray photoelectron spectroscopy, that a thin WS2 layer is present at the interface W/MoS2. The crystallization process is discussed by a …
Contact Resistance Measurements In Gaas Mesfet's And Modfet's By The Magneto‐Tlm Technique, David C. Look
Contact Resistance Measurements In Gaas Mesfet's And Modfet's By The Magneto‐Tlm Technique, David C. Look
Physics Faculty Publications
The standard transmission‐line model (TLM) for specific contact resistivity measurements of planar contacts is improved in two ways: (i) the addition of a magnetic field, which gives the mobility and carrier concentration of the bulk material, and the mobility of the material under the contact; and (ii) an extension to two layers, which makes the model applicable to MODFET structures. The results are applied to MESFET material, and MODFET material. One conclusion concerning the latter material is that the electrons directly beneath the annealed Au/Ge/Ni contacts have lower mobility than those in the bulk, but still …
Ohmic Contacts To Al‐Implanted Znse, B. K. Shin, David C. Look, Y. S. Park
Ohmic Contacts To Al‐Implanted Znse, B. K. Shin, David C. Look, Y. S. Park
Physics Faculty Publications
No abstract provided.