Open Access. Powered by Scholars. Published by Universities.®
- Discipline
- Institution
- Publication Type
- File Type
Articles 1 - 2 of 2
Full-Text Articles in Physics
Frequency Dependence In The Initiation Of Laser-Induced Damage, Jeremy Gulley
Frequency Dependence In The Initiation Of Laser-Induced Damage, Jeremy Gulley
Jeremy R. Gulley
Numerous studies have investigated the role of photoionization in ultrafast laser-induced damage of bulk dielectrics. This study examines the role of spectral width and instantaneous laser frequency in laser-induced damage using a frequency dependent multiphoton ionization model and numerical simulation of an 800 nm laser pulse propagating through fused silica. When the individual photon wavelengths are greater than 827 nm, an additional photon is required for photoionization, reducing the probability of the event by many orders of magnitude. Simulation results suggest that this frequency dependence may significantly affect the processes of laser-induced damage and filamentation.
Silicon-Sensitized Erbium Excitation In Silicon-Rich Silica For Integrated Photonics, Oleksandr Savchyn
Silicon-Sensitized Erbium Excitation In Silicon-Rich Silica For Integrated Photonics, Oleksandr Savchyn
Electronic Theses and Dissertations
It is widely accepted that the continued increase of processor performance requires at least partial replacement of electronic interconnects with their photonic counterparts. The implementation of optical interconnects requires the realization of a silicon-based light source, which is challenging task due to the low emission efficiency of silicon. One of the main approaches to address this challenge is the use of doping of silicon based matrices with optical centers, including erbium ions. Erbium ions incorporated in various hosts assume the trivalent state (Er3+) and demonstrate a transition at 1.54 μm, coinciding with optical transmission windows in both silicon and silica. …