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Full-Text Articles in Physics
Features Of The Physical Properties Of The Modified Surface Of The P-Cdte – Znse Film Heterostructure With Deep Impurity Levels, Yuozas Y. Vaytkus, Nodir E. Alimov, Salim M. Otajonov
Features Of The Physical Properties Of The Modified Surface Of The P-Cdte – Znse Film Heterostructure With Deep Impurity Levels, Yuozas Y. Vaytkus, Nodir E. Alimov, Salim M. Otajonov
Scientific Bulletin. Physical and Mathematical Research
This article analyzes the spectrum of the photocurrent in a layered film heterostructure CdTe-ZnSe with deep primesnymi levels. The experimental results demonstrated that the heterostructure CdTe-ZnSe observed a new effect in the measurement of the photoconductivity spectra, depending on the direction of the applied electric field, and the applied field stimulates the emergence of photo-emf. The spectrum of the photocurrent in a layered CdTe- ZnSe heterostructure film with deep impurity levels are considered in the article. It follows from the experimental results that a new effect is observed in the CdTe-ZnSe heterostructure when measuring the photoconductivity spectra depending on the …
Electron Hole Capture Centers In An Irradiated K2so4-Cu Crystal, T. N. Nurakhmetov, Zh. M. Salikhodzha, R. Z. Bakhtizin, A. M. Zhunusbekov, A. Zh. Kainarbay, D. H. Daurenbekov, B. M. Sadykova, K. B. Zhangylyssov, B. N. Yussupbekova
Electron Hole Capture Centers In An Irradiated K2so4-Cu Crystal, T. N. Nurakhmetov, Zh. M. Salikhodzha, R. Z. Bakhtizin, A. M. Zhunusbekov, A. Zh. Kainarbay, D. H. Daurenbekov, B. M. Sadykova, K. B. Zhangylyssov, B. N. Yussupbekova
Eurasian Journal of Physics and Functional Materials
The methods of vacuum ultraviolet and thermal activation spectroscopy were used to measure the excitation spectra of impurity radiation in the fundamental absorption band of K2SO4-Cu crystals at 15 K and 300 K. An energy transfer was detected from the base to Cu+ impurities. The band gap of crystals K2SO4 was estimated. In K2SO4-Cu crystals, recombination radiation bands were detected at 2.95 ÷ 3.0 eV corresponding to electron hole capture centers.