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Articles 121 - 150 of 199
Full-Text Articles in Physics
Quantum Algorithm For Bose-Einstein Condensate Quantum Fluid Dynamics: Twisting Of Filamentary Vortex Solitons Demarcated By Fast Poincare Recursion, Jeffrey Yepez, George Vahala, Linda L. Vahala
Quantum Algorithm For Bose-Einstein Condensate Quantum Fluid Dynamics: Twisting Of Filamentary Vortex Solitons Demarcated By Fast Poincare Recursion, Jeffrey Yepez, George Vahala, Linda L. Vahala
Electrical & Computer Engineering Faculty Publications
The dynamics of vortex solitons is studied in a BEC superfluid. A quantum lattice-gas algorithm (measurementbased quantum computation) is employed to examine the dynamical behavior vortex soliton solutions of the Gross-Pitaevskii equation (ø4 interaction nonlinear Schroedinger equation). Quantum turbulence is studied in large grid numerical simulations: Kolmogorov spectrum associated with a Richardson energy cascade occurs on large flow scales. At intermediate scales, a new k-6 power law emerges, due to vortex filamentary reconnections associated with Kelvin wave instabilities (vortex twisting) coupling to sound modes and the exchange of intermediate vortex rings. Finally, at very small spatial scales a …
Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The nucleation and growth of indium on a vicinal Si (100) - (2×1) surface at high temperature by femtosecond pulsed laser deposition was investigated by in situ reflection high energy electron diffraction (RHEED). RHEED intensity relaxation was observed for the first ∼2 ML during the growth of In (4×3) by step flow. From the temperature dependence of the rate of relaxation, an activation energy of 1.4±0.2 eV of surface diffusion was determined. The results indicate that indium small clusters diffused to terrace step edges with a diffusion frequency constant of (1.0±0.1) × 1011 s-1. The RHEED specular …
Reproducible Increased Mg Incorporation And Large Hole Concentration In Gan Using Metal Modulated Epitaxy, Shawn D. Burnham, Gon Namkoong, David C. Look, Bruce Clafin, W. Alan Doolittle
Reproducible Increased Mg Incorporation And Large Hole Concentration In Gan Using Metal Modulated Epitaxy, Shawn D. Burnham, Gon Namkoong, David C. Look, Bruce Clafin, W. Alan Doolittle
Electrical & Computer Engineering Faculty Publications
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7 × 1020 cm-3 …
Electron Density And Temperature Measurement Of An Atmospheric Pressure Plasma By Millimeter Wave Interferometer, Xinpei Lu, Mounir Laroussi
Electron Density And Temperature Measurement Of An Atmospheric Pressure Plasma By Millimeter Wave Interferometer, Xinpei Lu, Mounir Laroussi
Electrical & Computer Engineering Faculty Publications
In this paper, a 105 GHz millimeter wave interferometer system is used to measure the electron density and temperature of an atmospheric pressure helium plasma driven by submicrosecond pulses. The peak electron density and electron-neutral collision frequency reach 8 X 1012 cm-3 and 2.1 X 1012 s-1, respectively. According to the electron-helium collision cross section and the measured electron-neutral collision frequency, the electron temperature of the plasma is estimated to reach a peak value of about 8.7 eV.
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …
Plasma Medicine, Mounir Laroussi, Alexander Fridman
Plasma Medicine, Mounir Laroussi, Alexander Fridman
Electrical & Computer Engineering Faculty Publications
Recent demonstrations of plasma technology in the treatment of living cells, tissues, and organs are creating a newfield at the intersection of plasma science and technology with biology and medicine - Plasma Medicine.
Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The growth of indium on a vicinal Si (100) - (2×1) surface at room temperature by femtosecond pulsed laser deposition (fsPLD) was investigated by in situ reflection high-energy electron diffraction (RHEED). Recovery of the RHEED intensity was observed between laser pulses and when the growth was terminated. The surface diffusion coefficient of deposited In on initial two-dimensional (2D) In- (2×1) layer was determined. As growth proceeds, three-dimensional In islands grew on the 2D In- (2×1) layer. The RHEED specular profile was analyzed during film growth, while the grown In islands were examined by ex situ atomic force microscopy. The full …
Tio2 Breakdown Under Pulsed Conditions, G. Zhao, R. P. Joshi, V. K. Lakdawala, E. Schamiloglu, H. Hjalmarson
Tio2 Breakdown Under Pulsed Conditions, G. Zhao, R. P. Joshi, V. K. Lakdawala, E. Schamiloglu, H. Hjalmarson
Electrical & Computer Engineering Faculty Publications
Model studies of current conduction and breakdown in TiO2 were carried out. Our simulation results indicate that electrical breakdown of TiO2 under multiple-pulsed conditions can occur at lower voltages as compared to quasi-dc biasing. This is in agreement with recent experimental data and is indicative of a cumulative phenomena. We demonstrate that the lower breakdown voltages observed in TiO2 under pulsed conditions is a direct rise-time effect, coupled with successive detrapping at the grain boundaries. 2007 American Institute of Physics.
Entopic Lattice Boltzmann Representations Required To Recover Navier Stokes Flows, Brian Keating, George Vahala, Jeffrey Yepez, Min Soe, Linda L. Vahala
Entopic Lattice Boltzmann Representations Required To Recover Navier Stokes Flows, Brian Keating, George Vahala, Jeffrey Yepez, Min Soe, Linda L. Vahala
Electrical & Computer Engineering Faculty Publications
There are two disparate formulations of the entropic lattice Boltzmann scheme: one of these theories revolves around the analog of the discrete Boltzmann H function of standard extensive statistical mechanics, while the other revolves around the nonextensive Tsallis entropy. It is shown here that it is the nonenforcement of the pressure tensor moment constraints that lead to extremizations of entropy resulting in Tsallis-like forms. However, with the imposition of the pressure tensor moment constraint, as is fundamentally necessary for the recovery of the Navier-Stokes equations, it is proved that the entropy function must be of the discrete Boltzmann form. Three-dimensional …
Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm 2 fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …
New Einsteins Need Positive Environment, Independent Spirit, Amin Dharamsi
New Einsteins Need Positive Environment, Independent Spirit, Amin Dharamsi
Electrical & Computer Engineering Faculty Publications
After reading the letters about Lee Smolin’s “Why No ‘New Einstein’?” (PHYSICS TODAY, June 2005, page 56; January 2006, page 13), I could not help but relive my undergraduate and graduate experiences at Columbia University from 1968 to 1978. As one of the few black and Hispanic people with a PhD in theoretical physics from that institution, I hope my observations expand the argument about creativity and the perception of it, particularly regarding minorities and how they are perceived by others.
Dynamics Of An Atmospheric Pressure Plasma Plume Generated By Submicrosecond Voltage Pulses, Xinpei Lu, Mounir Laroussi
Dynamics Of An Atmospheric Pressure Plasma Plume Generated By Submicrosecond Voltage Pulses, Xinpei Lu, Mounir Laroussi
Electrical & Computer Engineering Faculty Publications
Nonequilibrium plasmas driven by submicrosecond high voltage pulses have been proven to produce high-energy electrons, which in turn lead to enhanced ionization and excitations. Here, we describe a device capable of launching a cold plasma plume in the surrounding air. This device, "the plasma pencil," is driven by few hundred nanosecond wide pulses at repetition rates of a few kilohertz. Correlation between current-voltage characteristics and fast photography shows that the plasma plume is in fact a small bulletlike volume of plasma traveling at unusually high velocities. A model based on photoionization is used to explain the propagation kinetics of the …
Melting And Solidification Study Of As-Deposited And Recrystallized Bi Thin Films, M. K. Zayed, H. E. Elsayed-Ali
Melting And Solidification Study Of As-Deposited And Recrystallized Bi Thin Films, M. K. Zayed, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Melting and solidification of as-deposited and recrystallized Bi crystallites, deposited on highly oriented 002-graphite at 423 K, were studied using reflection high-energy electron diffraction (RHEED). Films with mean thickness between 1.5 and 33 ML (monolayers) were studied. Ex situ atomic force microscopy was used to study the morphology and the size distribution of the formed nanocrystals. The as-deposited films grew in the form of three-dimensional crystallites with different shapes and sizes, while those recrystallized from the melt were formed in nearly similar shapes but different sizes. The change in the RHEED pattern with temperature was used to probe the melting …
Electron Bernstein Wave Simulations And Comparison To Preliminary Nstx Emission Data, Josef Preinhaelter, Jakub Urban, Pavol Pavlo, Gary Taylor, Steffi Diem, Linda L. Vahala, George Vahala
Electron Bernstein Wave Simulations And Comparison To Preliminary Nstx Emission Data, Josef Preinhaelter, Jakub Urban, Pavol Pavlo, Gary Taylor, Steffi Diem, Linda L. Vahala, George Vahala
Electrical & Computer Engineering Faculty Publications
Simulations indicate that during flattop current discharges the optimal angles for the aiming of the National Spherical Torus Experiment (NSTX) antennae are quite rugged and basically independent of time. The time development of electron Bernstein wave emission (EBWE) at particular frequencies as well as the frequency spectrum of EBWE as would be seen by the recently installed NSTX antennae are computed. The simulation of EBWE at low frequencies (e.g., 16 GHz) agrees well with the recent preliminary EBWE measurements on NSTX. At high frequencies, the sensitivity of EBWE to magnetic field variations is understood by considering the Doppler broadened electron …
Lattice Quantum Algorithm For The Schrodinger Wave Equation In 2+1 Dimensions With A Demonstration By Modeling Soliton Instabilities, Jeffrey Yepez, George Vahala, Linda L. Vahala
Lattice Quantum Algorithm For The Schrodinger Wave Equation In 2+1 Dimensions With A Demonstration By Modeling Soliton Instabilities, Jeffrey Yepez, George Vahala, Linda L. Vahala
Electrical & Computer Engineering Faculty Publications
A lattice-based quantum algorithm is presented to model the non-linear Schrödinger-like equations in 2 + 1 dimensions. In this lattice-based model, using only 2 qubits per node, a sequence of unitary collide (qubit-qubit interaction) and stream (qubit translation) operators locally evolve a discrete field of probability amplitudes that in the long-wavelength limit accurately approximates a non-relativistic scalar wave function. The collision operator locally entangles pairs of qubits followed by a streaming operator that spreads the entanglement throughout the two dimensional lattice. The quantum algorithmic scheme employs a non-linear potential that is proportional to the moduli square of the wave function. …
Condensation On (002) Graphite Of Liquid Bismuth Far Below Its Bulk Melting Point, M. K. Zayed, H. E. Elsayed-Ali
Condensation On (002) Graphite Of Liquid Bismuth Far Below Its Bulk Melting Point, M. K. Zayed, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Condensation of thermally evaporated Bi on (002) graphite, at temperatures of 300-523K, was studied using in situ reflection high-energy electron diffraction (RHEED) and room temperature ex situ atomic force microscopy (AFM). For deposition at temperatures below 415±5K, transmission RHEED patterns of Bi appeared at an average thickness of ∼0.5 monolayer (ML). AFM images showed that the film consisted of crystallites in the shape of triangular step pyramids with step heights corresponding to single and double Bi layers in the [111] direction. This morphology indicates crystallization from the vapor. For deposition at higher temperatures, diffuse RHEED patterns appeared independent of the …
Optimization Of Ultraviolet Emission And Chemical Species Generation From A Pulsed Dielectric Barrier Discharge At Atmospheric Pressure, Xinpei Lu, Mounir Laroussi
Optimization Of Ultraviolet Emission And Chemical Species Generation From A Pulsed Dielectric Barrier Discharge At Atmospheric Pressure, Xinpei Lu, Mounir Laroussi
Electrical & Computer Engineering Faculty Publications
One of the attractive features of nonthermal atmospheric pressure plasmas is the ability to achieve enhanced gas phase chemistry without the need for elevated gas temperatures. This attractive characteristic recently led to their extensive use in applications that require low temperatures, such as material processing and biomedical applications. The agents responsible for the efficient plasma reactivity are the ultraviolet (UV) photons and the chemically reactive species. In this paper, in order to optimize the UV radiation and reactive species generation efficiency, the plasma was generated by a dielectric barrier discharge driven by unipolar submicrosecond square pulses. To keep the discharge …
Room-Temperature Atmospheric Pressure Plasma For Biomedical Applications, Mounir Laroussi, Xinpei Lu
Room-Temperature Atmospheric Pressure Plasma For Biomedical Applications, Mounir Laroussi, Xinpei Lu
Electrical & Computer Engineering Faculty Publications
As low-temperature non-equilibrium plasmas come to play an increasing role in biomedical applications, reliable and user-friendly sources need to be developed. These plasma sources have to meet stringent requirements such as low temperature (at or near room temperature), no risk of arcing, operation at atmospheric pressure, preferably hand-held operation, low concentration of ozone generation, etc. In this letter, we present a device that meets exactly such requirements. This device is capable of generating a cold plasma plume several centimeters in length. It exhibits low power requirements as shown by its current-voltage characteristics. Using helium as a carrier gas, very little …
Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]
Quantum Lattice Representation Of Dark Solitons, George Vahala, Linda L. Vahala, Jeffrey Yepez
Quantum Lattice Representation Of Dark Solitons, George Vahala, Linda L. Vahala, Jeffrey Yepez
Electrical & Computer Engineering Faculty Publications
The nonlinear Schrodinger (NLS) equation in a self-defocusing Kerr medium supports dark solitons. Moreover the mean field description of a dilute Bose-Einstein condensate (BEC) is described by the Gross-Pitaevskii equation, which for a highly anisotropic (cigar-shaped) magnetic trap reduces to a one-dimensional (1D) cubic NLS in an external potential. A quantum lattice algorithm is developed for the dark solitons. Simulations are presented for both black (stationary) solitons as well as (moving) dark solitons. Collisions of dark solitons are compared with the exact analytic solutions and coupled dark-bright vector solitons are examined. The quantum algorithm requires 2 qubits per scalar field …
Comparative Analysis Of Bragg Fibers, Shangping Guo, Sacharia Albin, Robert S. Rogowski
Comparative Analysis Of Bragg Fibers, Shangping Guo, Sacharia Albin, Robert S. Rogowski
Electrical & Computer Engineering Faculty Publications
In this paper, we compare three analysis methods for Bragg fibers, viz. the transfer matrix method, the asymptotic method and the Galerkin method. We also show that with minor modifications, the transfer matrix method is able to calculate exactly the leakage loss of Bragg fibers due to a finite number of H/L layers. This approach is more straightforward than the commonly used Chew’s method. It is shown that the asymptotic approximation condition should be satisfied in order to get accurate results. The TE and TM modes, and the band gap structures are analyzed using Galerkin method.
Photonic Band Gap Analysis Using Finite-Difference Frequency-Domain Method, Shangping Guo, Feng Wu, Sacharia Albin
Photonic Band Gap Analysis Using Finite-Difference Frequency-Domain Method, Shangping Guo, Feng Wu, Sacharia Albin
Electrical & Computer Engineering Faculty Publications
A finite-difference frequency-domain (FDFD) method is applied for photonic band gap calculations. The Maxwell’s equations under generalized coordinates are solved for both orthogonal and non-orthogonal lattice geometries. Complete and accurate band gap information is obtained by using this FDFD approach. Numerical results for 2D TE/TM modes in square and triangular lattices are in excellent agreements with results from plane wave method (PWM). The accuracy, convergence and computation time of this method are also discussed.
Loss And Dispersion Analysis Of Microstructured Fibers By Finite-Difference Method, Shangping Guo, Feng Wu, Sacharia Albin, Hsiang Tai, Robert S. Rogowski
Loss And Dispersion Analysis Of Microstructured Fibers By Finite-Difference Method, Shangping Guo, Feng Wu, Sacharia Albin, Hsiang Tai, Robert S. Rogowski
Electrical & Computer Engineering Faculty Publications
The dispersion and loss in microstructured fibers are studied using a full-vectorial compact-2D finite-difference method in frequency-domain. This method solves a standard eigen-value problem from the Maxwell’s equations directly and obtains complex propagation constants of the modes using anisotropic perfectly matched layers. A dielectric constant averaging technique using Ampere’s law across the curved media interface is presented. Both the real and the imaginary parts of the complex propagation constant can be obtained with a high accuracy and fast convergence. Material loss, dispersion and spurious modes are also discussed.
Influence Of Antenna Aiming On Ece In Mast, Josef Preinhaelter, Jakub Urban, Pavol Pavlo, Vladimir Shevchenko, Martin Valovič, Linda L. Vahala, George Vahala
Influence Of Antenna Aiming On Ece In Mast, Josef Preinhaelter, Jakub Urban, Pavol Pavlo, Vladimir Shevchenko, Martin Valovič, Linda L. Vahala, George Vahala
Electrical & Computer Engineering Faculty Publications
The effect of the direction of the detected beam on the intensity of ECE is studied. It is found that the combined effects of the strong dependence of the conversion efficiencey of O mode at the plasma resonance on the direction of the incident wave and the partial screening of the beam waist by the MAST vessel wall, can be responsible for the weakening of ECE emission for some frequencies. The theoretical model for ECE data interpretation on MAST has been significantly improved. New features of the model are as follows: the quasioptical treatment of the receiving antenna, interference, polarization …
Power Consideration In The Pulsed Dielectric Barrier Discharge At Atmospheric Pressure, M. Laroussi, X. Lu, V. Kolobov, R. Arslanbekov
Power Consideration In The Pulsed Dielectric Barrier Discharge At Atmospheric Pressure, M. Laroussi, X. Lu, V. Kolobov, R. Arslanbekov
Electrical & Computer Engineering Faculty Publications
Nonequilibrium, atmospheric pressure discharges are rapidly becoming an important technological component in material processing applications. Amongst their attractive features is the ability to achieve enhanced gas phase chemistry without the need for elevated gas temperatures. To further enhance the plasma chemistry, pulsed operation with pulse widths in the nanoseconds range has been suggested. We report on a specially designed, dielectric barrier discharge based diffuse pulsed discharge and its electrical characteristics. Two current pulses corresponding to two consecutive discharges are generated per voltage pulse. The second discharge, which occurs at the falling edge of the voltage pulse, is induced by the …
Are Microbubbles Necessary For The Breakdown Of Liquid Water Subjected To A Submicrosecond Pulse?, R. P. Joshi, J. Qian, G. Zhao, J. Kolb, K. H. Schoenbach, E. Schamiloglu, J. Gaudet
Are Microbubbles Necessary For The Breakdown Of Liquid Water Subjected To A Submicrosecond Pulse?, R. P. Joshi, J. Qian, G. Zhao, J. Kolb, K. H. Schoenbach, E. Schamiloglu, J. Gaudet
Electrical & Computer Engineering Faculty Publications
Electrical breakdown in homogeneous liquid water for an ∼ 100 ns voltage pulse is analyzed. It is shown that electron-impact ionization is not likely to be important and could only be operative for low-density situations or possibly under optical excitation. Simulation results also indicate that field ionization of liquid water can lead to a liquid breakdown provided the ionization energies were very low in the order of 2.3eV. Under such conditions, an electric-field collapse at the anode and plasma propagation toward the cathode, with minimal physical charge transport, is predicted. However, the low, unphysical ionization energies necessary for matching …
Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann
Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann
Electrical & Computer Engineering Faculty Publications
The evolution of the band structure of β-In2 S3−3x O3x (BISO) thin films grown by physical vapor deposition, with composition x, is investigated using x-ray photoelectron spectroscopy. It is shown that the energy difference between the valence-band level and the Fermi level remains nearly constant as the optical band gap of the films increases. As a consequence, the difference between the conduction band level and the Fermi level increases as much as the optical band gap of the films. The calculation of the electronic affinity [ ] of the BISO thin films shows that it decreases linearly from 4.65 …
Monte Carlo Analysis Of Gan-Based Gunn Oscillators For Microwave Power Generation, R. P. Joshi, V. Sridhara, P. Shah, R. D. Del Rosario
Monte Carlo Analysis Of Gan-Based Gunn Oscillators For Microwave Power Generation, R. P. Joshi, V. Sridhara, P. Shah, R. D. Del Rosario
Electrical & Computer Engineering Faculty Publications
Monte Carlo studies of transferred electron oscillators based on bulk wurtzite GaN are presented. Two structures have been examined: (i) devices with the conventional single notch structure, and (ii) repetitive structures with serial segments to fashion a "multiple domain" device. Wurtzite material has been chosen because of the higher drift velocity and because analytical expressions for the band structure have recently become available. Performance parameters of interest such as the operating frequency, output power, and conversion efficiency are calculated. Variations due to changes in temperature, biasing voltage, and device length are also included. It is shown that multidomain Gunn diodes …
Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac
Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac
Electrical & Computer Engineering Faculty Publications
γ-In[sub 2]Se[sub 3] thin film are deposited for various substrate temperatures in the range of 523–673 K. This study shows that at 573 and 673 K the thin films are well crystallized with grains aligned along the c axis. Between these temperatures, a domain of instability appears where the γ-In[sub 2]Se[sub 3] thin films have a randomly orientation and the c-lattice parameter increases. The presence of the metastable phase κ-In[sub 2]Se[sub 3], during the growth, can explain the existence of this domain of instability. The insertion of Zn during the preparation process allows us to stabilize the phase κ at …
Simple Plane Wave Implementation For Photonic Crystal Calculations, Shangping Guo, Sacharia Albin
Simple Plane Wave Implementation For Photonic Crystal Calculations, Shangping Guo, Sacharia Albin
Electrical & Computer Engineering Faculty Publications
A simple implementation of plane wave method is presented for modeling photonic crystals with arbitrary shaped ‘atoms’. The Fourier transform for a single ‘atom’ is first calculated either by analytical Fourier transform or numerical FFT, then the shift property is used to obtain the Fourier transform for any arbitrary supercell consisting of a finite number of ‘atoms’. To ensure accurate results, generally, two iterating processes including the plane wave iteration and grid resolution iteration must converge. Analysis shows that using analytical Fourier transform when available can improve accuracy and avoid the grid resolution iteration. It converges to the accurate results …