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Full-Text Articles in Physics
Carbon Multicharged Ion Generation From Laser-Spark Ion Source, Md. Mahmudur Rahman, Oguzhan Balki, Hani E. Elsayed-Ali
Carbon Multicharged Ion Generation From Laser-Spark Ion Source, Md. Mahmudur Rahman, Oguzhan Balki, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Multicharged carbon ions are generated by using a laser-assisted spark-discharge ion source. A Q-switched Nd:YAG laser pulse (1064 nm, 7 ns, ≤ 4.5 × 109 W/cm2) focused onto the surface of a glassy carbon target results in its ablation. The spark-discharge (∼1.2 J energy, ∼1 µs duration) is initiated along the direction of the plume propagation between the target surface and a grounded mesh that is parallel to the target surface. Ions emitted from the laser-spark plasma are detected by their time-of-flight using a Faraday cup. The ion energy-to-charge ratio is analyzed by a three-mesh retarding field …
Coupled Photonic Crystal Micro-Cavities With Ultra-Low Threshold Power For Stiumulated Raman Scattering, Qiang Liu, Zhengbiao Ouyang, Sacharia Albin
Coupled Photonic Crystal Micro-Cavities With Ultra-Low Threshold Power For Stiumulated Raman Scattering, Qiang Liu, Zhengbiao Ouyang, Sacharia Albin
Electrical & Computer Engineering Faculty Publications
We propose coupled cavities to realize a strong enhancement of the Raman scattering. Five sub cavities are embedded in the photonic crystals. Simulations through finite-difference time-domain (FDTD) method demonstrate that one cavity, which is used to propagate the pump beam at the optical-communication wavelength, has a Q factor as high as 1.254 × 108 and modal volume as small as 0.03μm3 (0.3192(λ/n)3). These parameters result in ultra-small threshold lasing power ~17.7nW and 2.58nW for Stokes and anti-Stokes respectively. The cavities are designed to support the required Stokes and anti-Stokes modal spacing in silicon. The proposed structure …
Picosecond Laser Pulse Irradiation Of Crystalline Silicon, K. L. Merkle, H. Baumgart, R.H. Uebbing, F. Phillipp
Picosecond Laser Pulse Irradiation Of Crystalline Silicon, K. L. Merkle, H. Baumgart, R.H. Uebbing, F. Phillipp
Electrical & Computer Engineering Faculty Publications
Morphology changes introduced by picosecond laser pulses at λ = 532 nm and 355 nm in (111) and (100) silicon samples are studied by means of optical and high-voltage electron microscopy. Depending on energy fluence, orientation and wavelength, amorphous or highly defective regions may be created. From an analysis of damage thresholds and damage depth distributions it is concluded that melting and energy confinement precedes the formation of the structural changes.